JPS60234367A - Ｍｉｓ型電界効果トランジスタ - Google Patents

Ｍｉｓ型電界効果トランジスタ

Info

Publication number
JPS60234367A
JPS60234367A JP59089415A JP8941584A JPS60234367A JP S60234367 A JPS60234367 A JP S60234367A JP 59089415 A JP59089415 A JP 59089415A JP 8941584 A JP8941584 A JP 8941584A JP S60234367 A JPS60234367 A JP S60234367A
Authority
JP
Japan
Prior art keywords
concentration
layer
offset
low
relatively high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59089415A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0564458B2 (enrdf_load_stackoverflow
Inventor
Kazuhiro Komori
小森　和宏
Kosuke Okuyama
幸祐 奥山
Norio Suzuki
範夫 鈴木
Hisao Katsuto
甲藤　久郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59089415A priority Critical patent/JPS60234367A/ja
Publication of JPS60234367A publication Critical patent/JPS60234367A/ja
Publication of JPH0564458B2 publication Critical patent/JPH0564458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/605—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having significant overlap between the lightly-doped extensions and the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59089415A 1984-05-07 1984-05-07 Ｍｉｓ型電界効果トランジスタ Granted JPS60234367A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59089415A JPS60234367A (ja) 1984-05-07 1984-05-07 Ｍｉｓ型電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59089415A JPS60234367A (ja) 1984-05-07 1984-05-07 Ｍｉｓ型電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS60234367A true JPS60234367A (ja) 1985-11-21
JPH0564458B2 JPH0564458B2 (enrdf_load_stackoverflow) 1993-09-14

Family

ID=13970015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59089415A Granted JPS60234367A (ja) 1984-05-07 1984-05-07 Ｍｉｓ型電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS60234367A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62134974A (ja) * 1985-12-04 1987-06-18 アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド 電界効果素子
JPS634668A (ja) * 1986-06-25 1988-01-09 Toshiba Corp Ｍｏｓ型半導体装置
US4928163A (en) * 1985-03-20 1990-05-22 Fujitsu Limited Semiconductor device
US5424234A (en) * 1991-06-13 1995-06-13 Goldstar Electron Co., Ltd. Method of making oxide semiconductor field effect transistor
WO1997036331A1 (en) * 1996-03-25 1997-10-02 Advanced Micro Devices, Inc. REDUCING REVERSE SHORT-CHANNEL EFFECT WITH LIGHT DOSE OF P WITH HIGH DOSE OF As IN N-CHANNEL LDD
WO2003105235A1 (ja) * 2002-06-10 2003-12-18 日本電気株式会社 絶縁ゲート型電界効果トランジスタを有する半導体装置及びその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4928163A (en) * 1985-03-20 1990-05-22 Fujitsu Limited Semiconductor device
JPS62134974A (ja) * 1985-12-04 1987-06-18 アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド 電界効果素子
JPS634668A (ja) * 1986-06-25 1988-01-09 Toshiba Corp Ｍｏｓ型半導体装置
US5424234A (en) * 1991-06-13 1995-06-13 Goldstar Electron Co., Ltd. Method of making oxide semiconductor field effect transistor
WO1997036331A1 (en) * 1996-03-25 1997-10-02 Advanced Micro Devices, Inc. REDUCING REVERSE SHORT-CHANNEL EFFECT WITH LIGHT DOSE OF P WITH HIGH DOSE OF As IN N-CHANNEL LDD
US5920104A (en) * 1996-03-25 1999-07-06 Advanced Micro Devices, Inc. Reducing reverse short-channel effect with light dose of P with high dose of as in n-channel LDD
WO2003105235A1 (ja) * 2002-06-10 2003-12-18 日本電気株式会社 絶縁ゲート型電界効果トランジスタを有する半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH0564458B2 (enrdf_load_stackoverflow) 1993-09-14

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