JPS60233851A - 固体イメ−ジセンサ - Google Patents
固体イメ−ジセンサInfo
- Publication number
- JPS60233851A JPS60233851A JP59075782A JP7578284A JPS60233851A JP S60233851 A JPS60233851 A JP S60233851A JP 59075782 A JP59075782 A JP 59075782A JP 7578284 A JP7578284 A JP 7578284A JP S60233851 A JPS60233851 A JP S60233851A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- photoelectric conversion
- light
- solid
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 33
- 238000002955 isolation Methods 0.000 claims description 19
- 239000003989 dielectric material Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 230000005012 migration Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 25
- 238000000926 separation method Methods 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000002344 surface layer Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- -1 5i8N Chemical class 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59075782A JPS60233851A (ja) | 1984-04-17 | 1984-04-17 | 固体イメ−ジセンサ |
| DE19853513196 DE3513196A1 (de) | 1984-04-17 | 1985-04-12 | Festkoerper-bildsensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59075782A JPS60233851A (ja) | 1984-04-17 | 1984-04-17 | 固体イメ−ジセンサ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60233851A true JPS60233851A (ja) | 1985-11-20 |
Family
ID=13586125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59075782A Pending JPS60233851A (ja) | 1984-04-17 | 1984-04-17 | 固体イメ−ジセンサ |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS60233851A (de) |
| DE (1) | DE3513196A1 (de) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01281001A (ja) * | 1988-04-30 | 1989-11-13 | Kobashi Kogyo Co Ltd | トラクタヘの作業機装着装置 |
| JPH0231153U (de) * | 1988-08-20 | 1990-02-27 | ||
| JPH04369273A (ja) * | 1991-06-18 | 1992-12-22 | Fujitsu Ltd | 赤外線検知装置 |
| KR100670606B1 (ko) | 2005-08-26 | 2007-01-17 | (주)이엠엘에스아이 | 크로스 토크를 감소시키는 이미지 센서의 소자 분리 구조체및 그 제조방법 |
| JP2007227750A (ja) * | 2006-02-24 | 2007-09-06 | Seiko Instruments Inc | 半導体装置及び半導体装置の製造方法 |
| JP2014045198A (ja) * | 2006-04-25 | 2014-03-13 | Koninklijke Philips Nv | （Ｂｉ）ＣＭＯＳプロセスによるアバランシェフォトダイオードの製造方法 |
| JP2015164210A (ja) * | 2015-04-16 | 2015-09-10 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
| US9570500B2 (en) | 2009-02-10 | 2017-02-14 | Sony Corporation | Solid-state imaging device, method of manufacturing the same, and electronic apparatus |
| JP2017168869A (ja) * | 2017-06-19 | 2017-09-21 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
| CN108695399A (zh) * | 2017-04-04 | 2018-10-23 | 浜松光子学株式会社 | 光半导体装置 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4914301A (en) * | 1987-04-21 | 1990-04-03 | Kabushiki Kaisha Toshiba | X-ray detector |
| DE4116694C2 (de) * | 1990-05-31 | 2001-10-18 | Fuji Electric Co Ltd | Mit einer Fotodiode versehene Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
| JP2817703B2 (ja) * | 1996-04-25 | 1998-10-30 | 日本電気株式会社 | 光半導体装置 |
| TWI251931B (en) * | 2004-12-29 | 2006-03-21 | Advanced Chip Eng Tech Inc | Imagine sensor with a protection layer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0067566A3 (de) * | 1981-06-13 | 1985-08-07 | Plessey Overseas Limited | Integrierter Lichtdetektor oder -generator mit Verstärker |
-
1984
- 1984-04-17 JP JP59075782A patent/JPS60233851A/ja active Pending
-
1985
- 1985-04-12 DE DE19853513196 patent/DE3513196A1/de not_active Withdrawn
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01281001A (ja) * | 1988-04-30 | 1989-11-13 | Kobashi Kogyo Co Ltd | トラクタヘの作業機装着装置 |
| JPH0231153U (de) * | 1988-08-20 | 1990-02-27 | ||
| JPH04369273A (ja) * | 1991-06-18 | 1992-12-22 | Fujitsu Ltd | 赤外線検知装置 |
| KR100670606B1 (ko) | 2005-08-26 | 2007-01-17 | (주)이엠엘에스아이 | 크로스 토크를 감소시키는 이미지 센서의 소자 분리 구조체및 그 제조방법 |
| JP2007227750A (ja) * | 2006-02-24 | 2007-09-06 | Seiko Instruments Inc | 半導体装置及び半導体装置の製造方法 |
| JP4584159B2 (ja) * | 2006-02-24 | 2010-11-17 | セイコーインスツル株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP2014045198A (ja) * | 2006-04-25 | 2014-03-13 | Koninklijke Philips Nv | （Ｂｉ）ＣＭＯＳプロセスによるアバランシェフォトダイオードの製造方法 |
| US9570500B2 (en) | 2009-02-10 | 2017-02-14 | Sony Corporation | Solid-state imaging device, method of manufacturing the same, and electronic apparatus |
| US9647025B2 (en) | 2009-02-10 | 2017-05-09 | Sony Corporation | Solid-state imaging device, method of manufacturing the same, and electronic apparatus |
| US9799698B2 (en) | 2009-02-10 | 2017-10-24 | Sony Corporation | Solid-state imaging device having improved light-collection, method of manufacturing the same, and electronic apparatus |
| US10141365B2 (en) | 2009-02-10 | 2018-11-27 | Sony Corporation | Solid-state imaging device having improved light-collection, method of manufacturing the same, and electronic apparatus |
| US11735620B2 (en) | 2009-02-10 | 2023-08-22 | Sony Group Corporation | Solid-state imaging device having optical black region, method of manufacturing the same, and electronic apparatus |
| JP2015164210A (ja) * | 2015-04-16 | 2015-09-10 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
| CN108695399A (zh) * | 2017-04-04 | 2018-10-23 | 浜松光子学株式会社 | 光半导体装置 |
| JP2018181911A (ja) * | 2017-04-04 | 2018-11-15 | 浜松ホトニクス株式会社 | 光半導体装置 |
| US11088190B2 (en) | 2017-04-04 | 2021-08-10 | Hamamatsu Photonics K.K. | Optical semiconductor device |
| JP2017168869A (ja) * | 2017-06-19 | 2017-09-21 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3513196A1 (de) | 1985-10-17 |
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