JPS60229389A - 半導体レ−ザ素子 - Google Patents

半導体レ−ザ素子

Info

Publication number
JPS60229389A
JPS60229389A JP59086700A JP8670084A JPS60229389A JP S60229389 A JPS60229389 A JP S60229389A JP 59086700 A JP59086700 A JP 59086700A JP 8670084 A JP8670084 A JP 8670084A JP S60229389 A JPS60229389 A JP S60229389A
Authority
JP
Japan
Prior art keywords
layer
semiconductor laser
thickness
laser device
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59086700A
Other languages
English (en)
Japanese (ja)
Other versions
JPH027194B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Toshiro Hayakawa
利郎 早川
Naohiro Suyama
尚宏 須山
Saburo Yamamoto
三郎 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=13894216&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS60229389(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59086700A priority Critical patent/JPS60229389A/ja
Priority to US06/725,094 priority patent/US4694460A/en
Priority to DE8585302898T priority patent/DE3581557D1/de
Priority to EP85302898A priority patent/EP0160515B1/en
Publication of JPS60229389A publication Critical patent/JPS60229389A/ja
Publication of JPH027194B2 publication Critical patent/JPH027194B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP59086700A 1984-04-26 1984-04-26 半導体レ−ザ素子 Granted JPS60229389A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59086700A JPS60229389A (ja) 1984-04-26 1984-04-26 半導体レ−ザ素子
US06/725,094 US4694460A (en) 1984-04-26 1985-04-18 Stripe geometry semiconductor laser device
DE8585302898T DE3581557D1 (de) 1984-04-26 1985-04-25 Halbleiterlaser.
EP85302898A EP0160515B1 (en) 1984-04-26 1985-04-25 A semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59086700A JPS60229389A (ja) 1984-04-26 1984-04-26 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
JPS60229389A true JPS60229389A (ja) 1985-11-14
JPH027194B2 JPH027194B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-02-15

Family

ID=13894216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59086700A Granted JPS60229389A (ja) 1984-04-26 1984-04-26 半導体レ−ザ素子

Country Status (4)

Country Link
US (1) US4694460A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0160515B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS60229389A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3581557D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6338279A (ja) * 1986-08-04 1988-02-18 Sharp Corp 半導体レーザ装置の製造方法
JPS6360404A (ja) * 1986-03-28 1988-03-16 トムソン‐セーエスエフ 固体光導波路、該光導波路を応用したレ−ザ、および該光導波路とレ−ザの製造方法
JPS63202083A (ja) * 1987-02-18 1988-08-22 Hitachi Ltd 半導体レ−ザ装置
JP2008047641A (ja) * 2006-08-11 2008-02-28 Sharp Corp 半導体レーザ素子とその製造方法、光ディスク装置、および光伝送モジュール

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722214B2 (ja) * 1985-07-18 1995-03-08 シャープ株式会社 半導体レーザ素子の製造方法
JP2543551B2 (ja) * 1987-12-28 1996-10-16 キヤノン株式会社 半導体レ―ザ―
US5022036A (en) * 1988-12-29 1991-06-04 Sharp Kabushiki Kaisha Semiconductor laser device
JPH02228089A (ja) * 1989-02-28 1990-09-11 Omron Tateisi Electron Co リッジ導波路型半導体レーザ
NL8900748A (nl) * 1989-03-28 1990-10-16 Philips Nv Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
US4933302A (en) * 1989-04-19 1990-06-12 International Business Machines Corporation Formation of laser mirror facets and integration of optoelectronics
US5359619A (en) * 1992-02-20 1994-10-25 Sumitomo Electric Industries, Ltd. Multi-beam semiconductor laser and method for producing the same
KR960014732B1 (ko) * 1992-12-22 1996-10-19 양승택 Rwg형 반도체 레이저장치 및 제조방법
JP2001111160A (ja) 1999-04-19 2001-04-20 Canon Inc 半導体素子の製造方法及び半導体素子、リング共振器型半導体レーザ、ジャイロ
JP3763459B2 (ja) 2001-06-26 2006-04-05 シャープ株式会社 半導体レーザ素子及びその製造方法
US8509582B2 (en) * 2005-08-30 2013-08-13 Rambus Delaware Llc Reducing light leakage and improving contrast ratio performance in FTIR display devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147985A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Method of manufacturing a semiconductor light emission device
JPS5245296A (en) * 1975-10-07 1977-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductive phototransmission pass and semiconductor emission devic e used it

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5286093A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Striped semiconductor laser
US4615032A (en) * 1984-07-13 1986-09-30 At&T Bell Laboratories Self-aligned rib-waveguide high power laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147985A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Method of manufacturing a semiconductor light emission device
JPS5245296A (en) * 1975-10-07 1977-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductive phototransmission pass and semiconductor emission devic e used it

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6360404A (ja) * 1986-03-28 1988-03-16 トムソン‐セーエスエフ 固体光導波路、該光導波路を応用したレ−ザ、および該光導波路とレ−ザの製造方法
JPS6338279A (ja) * 1986-08-04 1988-02-18 Sharp Corp 半導体レーザ装置の製造方法
JPS63202083A (ja) * 1987-02-18 1988-08-22 Hitachi Ltd 半導体レ−ザ装置
JP2008047641A (ja) * 2006-08-11 2008-02-28 Sharp Corp 半導体レーザ素子とその製造方法、光ディスク装置、および光伝送モジュール

Also Published As

Publication number Publication date
US4694460A (en) 1987-09-15
EP0160515A2 (en) 1985-11-06
DE3581557D1 (de) 1991-03-07
JPH027194B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-02-15
EP0160515A3 (en) 1987-07-22
EP0160515B1 (en) 1991-01-30

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term