JPS60229359A - 高周波半導体装置 - Google Patents
高周波半導体装置Info
- Publication number
- JPS60229359A JPS60229359A JP59086414A JP8641484A JPS60229359A JP S60229359 A JPS60229359 A JP S60229359A JP 59086414 A JP59086414 A JP 59086414A JP 8641484 A JP8641484 A JP 8641484A JP S60229359 A JPS60229359 A JP S60229359A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- gate
- oxide film
- gate oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59086414A JPS60229359A (ja) | 1984-04-27 | 1984-04-27 | 高周波半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59086414A JPS60229359A (ja) | 1984-04-27 | 1984-04-27 | 高周波半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60229359A true JPS60229359A (ja) | 1985-11-14 |
| JPH0241909B2 JPH0241909B2 (enrdf_load_stackoverflow) | 1990-09-19 |
Family
ID=13886208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59086414A Granted JPS60229359A (ja) | 1984-04-27 | 1984-04-27 | 高周波半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60229359A (enrdf_load_stackoverflow) |
-
1984
- 1984-04-27 JP JP59086414A patent/JPS60229359A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0241909B2 (enrdf_load_stackoverflow) | 1990-09-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0324185B1 (en) | Input protecting circuit in use with a MOS semiconductor device | |
| US4851721A (en) | Semiconductor integrated circuit | |
| EP0226469A1 (en) | A semiconductor integrated circuit device | |
| JPS5848960A (ja) | 半導体装置 | |
| JPH0290570A (ja) | 電力ｍｏｓｆｅｔに対するゲート・ソース保護回路 | |
| JPH0282533A (ja) | バイポーラ・トランジスタ | |
| JPS60229359A (ja) | 高周波半導体装置 | |
| JP2783191B2 (ja) | 半導体装置の保護回路 | |
| JPS63137478A (ja) | 保護回路をもつ半導体装置の製造方法 | |
| JPS58197870A (ja) | 半導体装置 | |
| JPH06244371A (ja) | 半導体装置 | |
| JPS59191371A (ja) | 相補型ｍｏｓ電界効果装置 | |
| JPS58140165A (ja) | 電界効果半導体装置 | |
| JPS6091675A (ja) | 半導体装置 | |
| JPS622704B2 (enrdf_load_stackoverflow) | ||
| JPS6284542A (ja) | Ｍｏｓ半導体回路装置 | |
| JP2576758B2 (ja) | 半導体素子 | |
| JPH0532908B2 (enrdf_load_stackoverflow) | ||
| JPS6170760A (ja) | 縦型ｍｏｓｆｅｔ | |
| JPH0471274A (ja) | 半導体集積回路 | |
| JPH04316369A (ja) | 半導体装置 | |
| JPS6038859A (ja) | 相補形ｍｉｓ半導体装置 | |
| JPS60148161A (ja) | 半導体集積回路装置 | |
| JPS58202573A (ja) | 半導体集積回路装置 | |
| JPH04214662A (ja) | 集積回路用入力端保護装置 |