JPH0241909B2 - - Google Patents

Info

Publication number
JPH0241909B2
JPH0241909B2 JP59086414A JP8641484A JPH0241909B2 JP H0241909 B2 JPH0241909 B2 JP H0241909B2 JP 59086414 A JP59086414 A JP 59086414A JP 8641484 A JP8641484 A JP 8641484A JP H0241909 B2 JPH0241909 B2 JP H0241909B2
Authority
JP
Japan
Prior art keywords
chip
field effect
effect transistor
diode
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59086414A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60229359A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59086414A priority Critical patent/JPS60229359A/ja
Publication of JPS60229359A publication Critical patent/JPS60229359A/ja
Publication of JPH0241909B2 publication Critical patent/JPH0241909B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59086414A 1984-04-27 1984-04-27 高周波半導体装置 Granted JPS60229359A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59086414A JPS60229359A (ja) 1984-04-27 1984-04-27 高周波半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59086414A JPS60229359A (ja) 1984-04-27 1984-04-27 高周波半導体装置

Publications (2)

Publication Number Publication Date
JPS60229359A JPS60229359A (ja) 1985-11-14
JPH0241909B2 true JPH0241909B2 (enrdf_load_stackoverflow) 1990-09-19

Family

ID=13886208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59086414A Granted JPS60229359A (ja) 1984-04-27 1984-04-27 高周波半導体装置

Country Status (1)

Country Link
JP (1) JPS60229359A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS60229359A (ja) 1985-11-14

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