JPS60226484A - 赤外線集光加熱単結晶製造装置 - Google Patents
赤外線集光加熱単結晶製造装置Info
- Publication number
- JPS60226484A JPS60226484A JP8449184A JP8449184A JPS60226484A JP S60226484 A JPS60226484 A JP S60226484A JP 8449184 A JP8449184 A JP 8449184A JP 8449184 A JP8449184 A JP 8449184A JP S60226484 A JPS60226484 A JP S60226484A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- optical system
- infrared radiation
- preparation apparatus
- crystal preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 20
- 230000005855 radiation Effects 0.000 title 1
- 230000003287 optical effect Effects 0.000 claims description 19
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8449184A JPS60226484A (ja) | 1984-04-26 | 1984-04-26 | 赤外線集光加熱単結晶製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8449184A JPS60226484A (ja) | 1984-04-26 | 1984-04-26 | 赤外線集光加熱単結晶製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60226484A true JPS60226484A (ja) | 1985-11-11 |
| JPH0541597B2 JPH0541597B2 (enrdf_load_stackoverflow) | 1993-06-23 |
Family
ID=13832116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8449184A Granted JPS60226484A (ja) | 1984-04-26 | 1984-04-26 | 赤外線集光加熱単結晶製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60226484A (enrdf_load_stackoverflow) |
-
1984
- 1984-04-26 JP JP8449184A patent/JPS60226484A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0541597B2 (enrdf_load_stackoverflow) | 1993-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS60226484A (ja) | 赤外線集光加熱単結晶製造装置 | |
| JPS60221386A (ja) | 赤外線集光加熱単結晶製造装置 | |
| JPH0534317B2 (enrdf_load_stackoverflow) | ||
| JPH0541599B2 (enrdf_load_stackoverflow) | ||
| JPS60226488A (ja) | 赤外線集光加熱単結晶製造装置 | |
| JPS60221387A (ja) | 赤外線加熱単結晶製造装置 | |
| GB1405447A (en) | Crystal growing apparatus | |
| JPS60103095A (ja) | 単結晶の製造方法 | |
| JPS6197186A (ja) | 単結晶の製造方法 | |
| JPS6197185A (ja) | 単結晶の製造方法 | |
| JPS6071589A (ja) | 単結晶の製造方法 | |
| JPS6121992A (ja) | 赤外線集光加熱単結晶製造装置 | |
| JPS63291891A (ja) | 単結晶の製造方法 | |
| JPS63291892A (ja) | 単結晶の製造方法 | |
| JPS6042296A (ja) | 引上中に単結晶の直径を制御する装置 | |
| JPH0354186A (ja) | 浮遊帯溶融装置 | |
| JPS61209985A (ja) | 赤外線集光加熱単結晶製造装置 | |
| JPH07172993A (ja) | ルチル単結晶の製造方法 | |
| JPS60191093A (ja) | 単結晶の製造方法 | |
| JPS61163185A (ja) | 赤外線集光加熱単結晶製造装置 | |
| JPS61242982A (ja) | 赤外線集光加熱単結晶製造装置 | |
| JPH0343237B2 (enrdf_load_stackoverflow) | ||
| JPS61236682A (ja) | 赤外線集光加熱単結晶製造装置 | |
| JPH0565478B1 (enrdf_load_stackoverflow) | ||
| JPH0148240B2 (enrdf_load_stackoverflow) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |