GB1405447A - Crystal growing apparatus - Google Patents
Crystal growing apparatusInfo
- Publication number
- GB1405447A GB1405447A GB4480572A GB4480572A GB1405447A GB 1405447 A GB1405447 A GB 1405447A GB 4480572 A GB4480572 A GB 4480572A GB 4480572 A GB4480572 A GB 4480572A GB 1405447 A GB1405447 A GB 1405447A
- Authority
- GB
- United Kingdom
- Prior art keywords
- photo
- cells
- melt
- crystal
- change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/08—Measuring arrangements characterised by the use of optical techniques for measuring diameters
- G01B11/10—Measuring arrangements characterised by the use of optical techniques for measuring diameters of objects while moving
- G01B11/105—Measuring arrangements characterised by the use of optical techniques for measuring diameters of objects while moving using photoelectric detection means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1405447 Controlling the growth of crystals PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 28 Sept 1972 [1 Oct 1971] 44805/72 Heading G1A [Also in Division G3] In a control device controlling the growth of a crystal 5 from a melt 2 in crucible 1 heated by high frequency induction from a coil 30 supplied by a generator 31 which is controlled by a P.I.D. (proportional-integral-differential) control whose output signal is proportional to the difference between signals after time averaging of the amplified output signals of two photo-cells 26 and 25, the photo-cells receive light originating from a laser 11 and which has been reflected off a portion of the surface of the melt. The optical apparatus shown, especially the mirror 21 are set up so that the photo-cells 25 and 26 are equally illuminated if the diameter of the crystal being drawn by drawing rod 3 remains constant, and so that the output of the P.I.D. 32 will be zero. If the diameter of the crystal changes the gradient of the portion of the surface being investigated will change causing unequally illumination of the photo-cells and subsequent change in the heating of the melt to counter this change.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712149093 DE2149093C3 (en) | 1971-10-01 | 1971-10-01 | Device for growing single crystals by pulling them from a melt |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1405447A true GB1405447A (en) | 1975-09-10 |
Family
ID=5821216
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4480572A Expired GB1405447A (en) | 1971-10-01 | 1972-09-28 | Crystal growing apparatus |
| GB4480472A Expired GB1400593A (en) | 1971-10-01 | 1972-09-28 | Growing crystals from a melt |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4480472A Expired GB1400593A (en) | 1971-10-01 | 1972-09-28 | Growing crystals from a melt |
Country Status (10)
| Country | Link |
|---|---|
| JP (2) | JPS533757B2 (en) |
| AU (2) | AU4716772A (en) |
| BE (2) | BE789554A (en) |
| CA (1) | CA997255A (en) |
| CH (2) | CH559062A5 (en) |
| DE (1) | DE2149093C3 (en) |
| FR (2) | FR2154776B1 (en) |
| GB (2) | GB1405447A (en) |
| IT (2) | IT967978B (en) |
| NL (2) | NL7213119A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0134680A2 (en) * | 1983-07-29 | 1985-03-20 | Kabushiki Kaisha Toshiba | Apparatus for manufacturing a single crystal |
| EP0294311A1 (en) * | 1987-06-05 | 1988-12-07 | Shin-Etsu Handotai Company Limited | Automatic control of crystal rod diameter |
| EP0456370A2 (en) * | 1990-04-27 | 1991-11-13 | Nkk Corporation | Method and apparatus for controlling the diameter of a silicon single crystal |
| CN115613121A (en) * | 2022-11-18 | 2023-01-17 | 浙江晶盛机电股份有限公司 | Crystal production equipment and seed crystal breaking method |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5612863B2 (en) * | 1973-07-11 | 1981-03-25 | ||
| FI87660C (en) * | 1988-03-03 | 1993-02-10 | Leybold Ag | Method and apparatus for drawing monocrystals |
| DE4301072B4 (en) * | 1993-01-16 | 2006-08-24 | Crystal Growing Systems Gmbh | Process for pulling single crystals from a melt |
| CN115178756B (en) * | 2022-07-15 | 2023-05-12 | 中国科学院重庆绿色智能技术研究院 | High-resolution imaging device and method for laser selective melting transient molten pool characteristics |
-
1971
- 1971-10-01 DE DE19712149093 patent/DE2149093C3/en not_active Expired
-
1972
- 1972-09-28 IT IT2982872A patent/IT967978B/en active
- 1972-09-28 AU AU47167/72A patent/AU4716772A/en not_active Expired
- 1972-09-28 CH CH1415472A patent/CH559062A5/xx not_active IP Right Cessation
- 1972-09-28 AU AU47168/72A patent/AU4716872A/en not_active Expired
- 1972-09-28 IT IT2982772A patent/IT967977B/en active
- 1972-09-28 JP JP9669672A patent/JPS533757B2/ja not_active Expired
- 1972-09-28 NL NL7213119A patent/NL7213119A/xx unknown
- 1972-09-28 CH CH1415372A patent/CH558206A/en not_active IP Right Cessation
- 1972-09-28 GB GB4480572A patent/GB1405447A/en not_active Expired
- 1972-09-28 GB GB4480472A patent/GB1400593A/en not_active Expired
- 1972-09-28 NL NL7213118A patent/NL7213118A/xx unknown
- 1972-09-28 JP JP9669772A patent/JPS5238512B2/ja not_active Expired
- 1972-09-29 BE BE789554A patent/BE789554A/en unknown
- 1972-09-29 BE BE789553A patent/BE789553A/en unknown
- 1972-10-02 FR FR7234814A patent/FR2154776B1/fr not_active Expired
- 1972-10-02 FR FR7234815A patent/FR2154777B1/fr not_active Expired
- 1972-10-02 CA CA152,978A patent/CA997255A/en not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0134680A2 (en) * | 1983-07-29 | 1985-03-20 | Kabushiki Kaisha Toshiba | Apparatus for manufacturing a single crystal |
| EP0134680A3 (en) * | 1983-07-29 | 1987-07-15 | Kabushiki Kaisha Toshiba | Apparatus for manufacturing a single crystal |
| EP0294311A1 (en) * | 1987-06-05 | 1988-12-07 | Shin-Etsu Handotai Company Limited | Automatic control of crystal rod diameter |
| US4876438A (en) * | 1987-06-05 | 1989-10-24 | Shin-Etu Handotai Co., Ltd. | Control of the power to the heater and the speed of movement of a crystal rod by control of the crystal rod diameter |
| EP0456370A2 (en) * | 1990-04-27 | 1991-11-13 | Nkk Corporation | Method and apparatus for controlling the diameter of a silicon single crystal |
| EP0456370A3 (en) * | 1990-04-27 | 1992-08-12 | Nkk Corporation | Method and apparatus for controlling the diameter of a silicon single crystal |
| CN115613121A (en) * | 2022-11-18 | 2023-01-17 | 浙江晶盛机电股份有限公司 | Crystal production equipment and seed crystal breaking method |
Also Published As
| Publication number | Publication date |
|---|---|
| AU4716772A (en) | 1974-04-04 |
| IT967977B (en) | 1974-03-11 |
| NL7213119A (en) | 1973-04-03 |
| IT967978B (en) | 1974-03-11 |
| DE2149093B2 (en) | 1974-12-05 |
| FR2154776B1 (en) | 1976-08-20 |
| BE789553A (en) | 1973-03-29 |
| DE2149093C3 (en) | 1975-07-24 |
| GB1400593A (en) | 1975-07-16 |
| CH559062A5 (en) | 1975-02-28 |
| FR2154777B1 (en) | 1976-08-20 |
| JPS4842981A (en) | 1973-06-21 |
| FR2154777A1 (en) | 1973-05-11 |
| JPS4842980A (en) | 1973-06-21 |
| CA997255A (en) | 1976-09-21 |
| FR2154776A1 (en) | 1973-05-11 |
| JPS533757B2 (en) | 1978-02-09 |
| JPS5238512B2 (en) | 1977-09-29 |
| DE2149093A1 (en) | 1973-04-05 |
| CH558206A (en) | 1975-01-31 |
| NL7213118A (en) | 1973-04-03 |
| BE789554A (en) | 1973-03-29 |
| AU4716872A (en) | 1974-04-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |