GB1400593A - Growing crystals from a melt - Google Patents
Growing crystals from a meltInfo
- Publication number
- GB1400593A GB1400593A GB4480472A GB4480472A GB1400593A GB 1400593 A GB1400593 A GB 1400593A GB 4480472 A GB4480472 A GB 4480472A GB 4480472 A GB4480472 A GB 4480472A GB 1400593 A GB1400593 A GB 1400593A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- melt
- radiation
- mirror
- reflected radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/08—Measuring arrangements characterised by the use of optical techniques for measuring diameters
- G01B11/10—Measuring arrangements characterised by the use of optical techniques for measuring diameters of objects while moving
- G01B11/105—Measuring arrangements characterised by the use of optical techniques for measuring diameters of objects while moving using photoelectric detection means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1400593 Controlling growing crystals PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 28 Sept 1972 [1 Oct 1971] 44804/72 Heading B1S The diameter of a growing single crystal as it is drawn from a melt by a seed crystal is monitored by an optical device which comprises means for irradiating the surface of the melt with a narrow light beam, means for receiving the reflected radiation and means for comparing the reflected radiation with that of the desired reflected radiation. In the device the direction of the incident radiation and the reflected radiation encloses angles of at most 10‹ with the direction of drawing of the crystal and the incident beam is directed onto that area of the surface of the melt which is curved due to the presence of the crystal but is sufficiently far remote from the edge of the growing part of the crystal to ensure that in that area the surface of the melt deviates from a horizontal position by at most 5‹. The radiation may be produced by an incondescent lamp, an arc lamp or laser. The crystal may be germanium, silicon, or a semiconductor of a material of groups III-V e.g. a garnet or spinel material. As shown in the Figure a crystal 5 on seed 4, attached to drawing rod 3 is grown from a melt 2 contained in a crucible 1 heated by high frequency induction by coil 30 controlled by generator 31, and the diameter of the crystal is controlled by adjusting the high frequency current in the coil 30 by the optical device shown (11 to 21), with the output from photoelectric cells 25 and 26, being amplified by amplifiers 33 and 34 and controller 32. The optical device shown consists of a helium-neon laser 11, periodically interrupted by a chopper disc 12, a divergent lens 14, a convergent lens 20, a mirror 21 and a scanning point 9 on the surface 7 of the melt. The reflected beam is focused by mirror 21 and lens 26 through transparent plates 18 and 19 and mirror 16 onto the photodiodes.25 and 26 from which the desired comparison is made in controller 32.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712149093 DE2149093C3 (en) | 1971-10-01 | 1971-10-01 | Device for growing single crystals by pulling them from a melt |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1400593A true GB1400593A (en) | 1975-07-16 |
Family
ID=5821216
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4480472A Expired GB1400593A (en) | 1971-10-01 | 1972-09-28 | Growing crystals from a melt |
| GB4480572A Expired GB1405447A (en) | 1971-10-01 | 1972-09-28 | Crystal growing apparatus |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4480572A Expired GB1405447A (en) | 1971-10-01 | 1972-09-28 | Crystal growing apparatus |
Country Status (10)
| Country | Link |
|---|---|
| JP (2) | JPS533757B2 (en) |
| AU (2) | AU4716772A (en) |
| BE (2) | BE789554A (en) |
| CA (1) | CA997255A (en) |
| CH (2) | CH558206A (en) |
| DE (1) | DE2149093C3 (en) |
| FR (2) | FR2154777B1 (en) |
| GB (2) | GB1400593A (en) |
| IT (2) | IT967978B (en) |
| NL (2) | NL7213119A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115178756A (en) * | 2022-07-15 | 2022-10-14 | 中国科学院重庆绿色智能技术研究院 | High-resolution imaging device and method for transient molten pool characteristic during selective laser melting |
| CN115613121A (en) * | 2022-11-18 | 2023-01-17 | 浙江晶盛机电股份有限公司 | Crystal production equipment and seed crystal breaking method |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5612863B2 (en) * | 1973-07-11 | 1981-03-25 | ||
| JPS6033299A (en) * | 1983-07-29 | 1985-02-20 | Toshiba Corp | Apparatus for preparing single crystal |
| JPS63307186A (en) * | 1987-06-05 | 1988-12-14 | Shin Etsu Handotai Co Ltd | Crystal diameter controller in crystallization |
| FI87660C (en) * | 1988-03-03 | 1993-02-10 | Leybold Ag | Method and apparatus for drawing monocrystals |
| FI911857A (en) * | 1990-04-27 | 1991-10-28 | Nippon Kokan Kk | FOERFARANDE OCH APPARAT FOER KONTROLL AV DIAMETERN HOS EN ENSKILD SILIKONKRISTALL. |
| DE4301072B4 (en) * | 1993-01-16 | 2006-08-24 | Crystal Growing Systems Gmbh | Process for pulling single crystals from a melt |
-
1971
- 1971-10-01 DE DE19712149093 patent/DE2149093C3/en not_active Expired
-
1972
- 1972-09-28 NL NL7213119A patent/NL7213119A/xx unknown
- 1972-09-28 JP JP9669672A patent/JPS533757B2/ja not_active Expired
- 1972-09-28 NL NL7213118A patent/NL7213118A/xx unknown
- 1972-09-28 JP JP9669772A patent/JPS5238512B2/ja not_active Expired
- 1972-09-28 IT IT2982872A patent/IT967978B/en active
- 1972-09-28 AU AU47167/72A patent/AU4716772A/en not_active Expired
- 1972-09-28 GB GB4480472A patent/GB1400593A/en not_active Expired
- 1972-09-28 AU AU47168/72A patent/AU4716872A/en not_active Expired
- 1972-09-28 CH CH1415372A patent/CH558206A/en not_active IP Right Cessation
- 1972-09-28 IT IT2982772A patent/IT967977B/en active
- 1972-09-28 GB GB4480572A patent/GB1405447A/en not_active Expired
- 1972-09-28 CH CH1415472A patent/CH559062A5/xx not_active IP Right Cessation
- 1972-09-29 BE BE789554A patent/BE789554A/en unknown
- 1972-09-29 BE BE789553A patent/BE789553A/en unknown
- 1972-10-02 CA CA152,978A patent/CA997255A/en not_active Expired
- 1972-10-02 FR FR7234815A patent/FR2154777B1/fr not_active Expired
- 1972-10-02 FR FR7234814A patent/FR2154776B1/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115178756A (en) * | 2022-07-15 | 2022-10-14 | 中国科学院重庆绿色智能技术研究院 | High-resolution imaging device and method for transient molten pool characteristic during selective laser melting |
| CN115613121A (en) * | 2022-11-18 | 2023-01-17 | 浙江晶盛机电股份有限公司 | Crystal production equipment and seed crystal breaking method |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2154777A1 (en) | 1973-05-11 |
| IT967977B (en) | 1974-03-11 |
| DE2149093B2 (en) | 1974-12-05 |
| BE789553A (en) | 1973-03-29 |
| FR2154776A1 (en) | 1973-05-11 |
| NL7213118A (en) | 1973-04-03 |
| JPS4842980A (en) | 1973-06-21 |
| FR2154777B1 (en) | 1976-08-20 |
| CH559062A5 (en) | 1975-02-28 |
| AU4716772A (en) | 1974-04-04 |
| IT967978B (en) | 1974-03-11 |
| NL7213119A (en) | 1973-04-03 |
| GB1405447A (en) | 1975-09-10 |
| AU4716872A (en) | 1974-04-04 |
| JPS4842981A (en) | 1973-06-21 |
| FR2154776B1 (en) | 1976-08-20 |
| JPS533757B2 (en) | 1978-02-09 |
| CA997255A (en) | 1976-09-21 |
| DE2149093A1 (en) | 1973-04-05 |
| JPS5238512B2 (en) | 1977-09-29 |
| BE789554A (en) | 1973-03-29 |
| CH558206A (en) | 1975-01-31 |
| DE2149093C3 (en) | 1975-07-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |