JPS60226191A - 半導体レ−ザ素子 - Google Patents

半導体レ−ザ素子

Info

Publication number
JPS60226191A
JPS60226191A JP8460084A JP8460084A JPS60226191A JP S60226191 A JPS60226191 A JP S60226191A JP 8460084 A JP8460084 A JP 8460084A JP 8460084 A JP8460084 A JP 8460084A JP S60226191 A JPS60226191 A JP S60226191A
Authority
JP
Japan
Prior art keywords
layer
semiconductor laser
groove
deltaalpha
outside
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8460084A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0256836B2 (ru
Inventor
Saburo Yamamoto
三郎 山本
Hiroshi Hayashi
寛 林
Taiji Morimoto
泰司 森本
Morichika Yano
矢野　盛規
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP8460084A priority Critical patent/JPS60226191A/ja
Publication of JPS60226191A publication Critical patent/JPS60226191A/ja
Publication of JPH0256836B2 publication Critical patent/JPH0256836B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)
JP8460084A 1984-04-25 1984-04-25 半導体レ−ザ素子 Granted JPS60226191A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8460084A JPS60226191A (ja) 1984-04-25 1984-04-25 半導体レ−ザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8460084A JPS60226191A (ja) 1984-04-25 1984-04-25 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
JPS60226191A true JPS60226191A (ja) 1985-11-11
JPH0256836B2 JPH0256836B2 (ru) 1990-12-03

Family

ID=13835173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8460084A Granted JPS60226191A (ja) 1984-04-25 1984-04-25 半導体レ−ザ素子

Country Status (1)

Country Link
JP (1) JPS60226191A (ru)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179789A (ja) * 1986-02-03 1987-08-06 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS62185389A (ja) * 1986-02-12 1987-08-13 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS62296583A (ja) * 1986-06-17 1987-12-23 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135994A (en) * 1980-03-28 1981-10-23 Fujitsu Ltd Semiconductor light emitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135994A (en) * 1980-03-28 1981-10-23 Fujitsu Ltd Semiconductor light emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179789A (ja) * 1986-02-03 1987-08-06 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS62185389A (ja) * 1986-02-12 1987-08-13 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS62296583A (ja) * 1986-06-17 1987-12-23 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置

Also Published As

Publication number Publication date
JPH0256836B2 (ru) 1990-12-03

Similar Documents

Publication Publication Date Title
JPS60110188A (ja) 半導体レ−ザ素子
EP0579244B1 (en) A semiconductor laser and a method for producing the same
JPH0656906B2 (ja) 半導体レ−ザ装置
JPH0196980A (ja) 半導体レーザ素子及びその製造方法
JPH03227088A (ja) 半導体レーザ
JPS6343908B2 (ru)
JPS60226191A (ja) 半導体レ−ザ素子
JPS6218783A (ja) 半導体レ−ザ素子
JP2792177B2 (ja) 半導体レーザ
JP2702871B2 (ja) 半導体レーザおよびその製造方法
JPS6037191A (ja) 半導体レ−ザの製造方法
JPS59145590A (ja) 半導体レ−ザ装置
JPS6362292A (ja) 半導体レ−ザ装置およびその製造方法
JPH0671121B2 (ja) 半導体レーザ装置
JP3075512B2 (ja) 半導体レーザ素子
JPH0422033B2 (ru)
JP3277711B2 (ja) 半導体レーザ及びその製造方法
JPH0614575B2 (ja) 半導体レーザ素子
JPS6190489A (ja) 半導体レ−ザ装置およびその製造方法
KR100284765B1 (ko) 반도체 레이저 다이오드 및 그 제조 방법
JPH01132189A (ja) 半導体レーザ素子およびその製造方法
JP2712970B2 (ja) 半導体レーザとその製造方法
JPH01132191A (ja) 半導体レーザ素子
JPH0410705Y2 (ru)
JPH0147029B2 (ru)