JPS60210595A - 粒子線エピタキシヤル装置のシヤツタ機構 - Google Patents

粒子線エピタキシヤル装置のシヤツタ機構

Info

Publication number
JPS60210595A
JPS60210595A JP6482184A JP6482184A JPS60210595A JP S60210595 A JPS60210595 A JP S60210595A JP 6482184 A JP6482184 A JP 6482184A JP 6482184 A JP6482184 A JP 6482184A JP S60210595 A JPS60210595 A JP S60210595A
Authority
JP
Japan
Prior art keywords
particle beam
chamber
cooling wall
shutter
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6482184A
Other languages
English (en)
Japanese (ja)
Other versions
JPH054359B2 (enExample
Inventor
Morihiko Kimata
木俣　守彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Shimazu Seisakusho KK
Original Assignee
Shimadzu Corp
Shimazu Seisakusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp, Shimazu Seisakusho KK filed Critical Shimadzu Corp
Priority to JP6482184A priority Critical patent/JPS60210595A/ja
Publication of JPS60210595A publication Critical patent/JPS60210595A/ja
Publication of JPH054359B2 publication Critical patent/JPH054359B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP6482184A 1984-03-31 1984-03-31 粒子線エピタキシヤル装置のシヤツタ機構 Granted JPS60210595A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6482184A JPS60210595A (ja) 1984-03-31 1984-03-31 粒子線エピタキシヤル装置のシヤツタ機構

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6482184A JPS60210595A (ja) 1984-03-31 1984-03-31 粒子線エピタキシヤル装置のシヤツタ機構

Publications (2)

Publication Number Publication Date
JPS60210595A true JPS60210595A (ja) 1985-10-23
JPH054359B2 JPH054359B2 (enExample) 1993-01-19

Family

ID=13269296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6482184A Granted JPS60210595A (ja) 1984-03-31 1984-03-31 粒子線エピタキシヤル装置のシヤツタ機構

Country Status (1)

Country Link
JP (1) JPS60210595A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104139887A (zh) * 2013-05-10 2014-11-12 威光自动化科技股份有限公司 胶膜牵引方法及其装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104139887A (zh) * 2013-05-10 2014-11-12 威光自动化科技股份有限公司 胶膜牵引方法及其装置

Also Published As

Publication number Publication date
JPH054359B2 (enExample) 1993-01-19

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