JPH055797B2 - - Google Patents

Info

Publication number
JPH055797B2
JPH055797B2 JP3766084A JP3766084A JPH055797B2 JP H055797 B2 JPH055797 B2 JP H055797B2 JP 3766084 A JP3766084 A JP 3766084A JP 3766084 A JP3766084 A JP 3766084A JP H055797 B2 JPH055797 B2 JP H055797B2
Authority
JP
Japan
Prior art keywords
particle beam
substrate
chamber
growth
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3766084A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60180997A (ja
Inventor
Morihiko Kimata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimazu Seisakusho KK
Original Assignee
Shimazu Seisakusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimazu Seisakusho KK filed Critical Shimazu Seisakusho KK
Priority to JP3766084A priority Critical patent/JPS60180997A/ja
Publication of JPS60180997A publication Critical patent/JPS60180997A/ja
Publication of JPH055797B2 publication Critical patent/JPH055797B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP3766084A 1984-02-28 1984-02-28 粒子線エピタキシヤル装置 Granted JPS60180997A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3766084A JPS60180997A (ja) 1984-02-28 1984-02-28 粒子線エピタキシヤル装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3766084A JPS60180997A (ja) 1984-02-28 1984-02-28 粒子線エピタキシヤル装置

Publications (2)

Publication Number Publication Date
JPS60180997A JPS60180997A (ja) 1985-09-14
JPH055797B2 true JPH055797B2 (enExample) 1993-01-25

Family

ID=12503792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3766084A Granted JPS60180997A (ja) 1984-02-28 1984-02-28 粒子線エピタキシヤル装置

Country Status (1)

Country Link
JP (1) JPS60180997A (enExample)

Also Published As

Publication number Publication date
JPS60180997A (ja) 1985-09-14

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