JPS60180997A - 粒子線エピタキシヤル装置 - Google Patents

粒子線エピタキシヤル装置

Info

Publication number
JPS60180997A
JPS60180997A JP3766084A JP3766084A JPS60180997A JP S60180997 A JPS60180997 A JP S60180997A JP 3766084 A JP3766084 A JP 3766084A JP 3766084 A JP3766084 A JP 3766084A JP S60180997 A JPS60180997 A JP S60180997A
Authority
JP
Japan
Prior art keywords
substrate
particle beam
particle beams
chamber
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3766084A
Other languages
English (en)
Japanese (ja)
Other versions
JPH055797B2 (enExample
Inventor
Morihiko Omata
大俣　守彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Shimazu Seisakusho KK
Original Assignee
Shimadzu Corp
Shimazu Seisakusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp, Shimazu Seisakusho KK filed Critical Shimadzu Corp
Priority to JP3766084A priority Critical patent/JPS60180997A/ja
Publication of JPS60180997A publication Critical patent/JPS60180997A/ja
Publication of JPH055797B2 publication Critical patent/JPH055797B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP3766084A 1984-02-28 1984-02-28 粒子線エピタキシヤル装置 Granted JPS60180997A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3766084A JPS60180997A (ja) 1984-02-28 1984-02-28 粒子線エピタキシヤル装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3766084A JPS60180997A (ja) 1984-02-28 1984-02-28 粒子線エピタキシヤル装置

Publications (2)

Publication Number Publication Date
JPS60180997A true JPS60180997A (ja) 1985-09-14
JPH055797B2 JPH055797B2 (enExample) 1993-01-25

Family

ID=12503792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3766084A Granted JPS60180997A (ja) 1984-02-28 1984-02-28 粒子線エピタキシヤル装置

Country Status (1)

Country Link
JP (1) JPS60180997A (enExample)

Also Published As

Publication number Publication date
JPH055797B2 (enExample) 1993-01-25

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