JPH054359B2 - - Google Patents
Info
- Publication number
- JPH054359B2 JPH054359B2 JP6482184A JP6482184A JPH054359B2 JP H054359 B2 JPH054359 B2 JP H054359B2 JP 6482184 A JP6482184 A JP 6482184A JP 6482184 A JP6482184 A JP 6482184A JP H054359 B2 JPH054359 B2 JP H054359B2
- Authority
- JP
- Japan
- Prior art keywords
- particle beam
- chamber
- shutter
- cooling wall
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002245 particle Substances 0.000 claims description 70
- 238000001816 cooling Methods 0.000 claims description 25
- 230000005855 radiation Effects 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 102000006391 Ion Pumps Human genes 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6482184A JPS60210595A (ja) | 1984-03-31 | 1984-03-31 | 粒子線エピタキシヤル装置のシヤツタ機構 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6482184A JPS60210595A (ja) | 1984-03-31 | 1984-03-31 | 粒子線エピタキシヤル装置のシヤツタ機構 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60210595A JPS60210595A (ja) | 1985-10-23 |
| JPH054359B2 true JPH054359B2 (enExample) | 1993-01-19 |
Family
ID=13269296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6482184A Granted JPS60210595A (ja) | 1984-03-31 | 1984-03-31 | 粒子線エピタキシヤル装置のシヤツタ機構 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60210595A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI555691B (zh) * | 2013-05-10 | 2016-11-01 | Mas Automation Corp | Membrane traction method and device thereof |
-
1984
- 1984-03-31 JP JP6482184A patent/JPS60210595A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60210595A (ja) | 1985-10-23 |
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