JPS60202981A - 半導体レ−ザ装置 - Google Patents

半導体レ−ザ装置

Info

Publication number
JPS60202981A
JPS60202981A JP6021784A JP6021784A JPS60202981A JP S60202981 A JPS60202981 A JP S60202981A JP 6021784 A JP6021784 A JP 6021784A JP 6021784 A JP6021784 A JP 6021784A JP S60202981 A JPS60202981 A JP S60202981A
Authority
JP
Japan
Prior art keywords
layer
laser device
quantum well
active layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6021784A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0141269B2 (enExample
Inventor
Toshio Fujii
俊夫 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6021784A priority Critical patent/JPS60202981A/ja
Publication of JPS60202981A publication Critical patent/JPS60202981A/ja
Publication of JPH0141269B2 publication Critical patent/JPH0141269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers

Landscapes

  • Semiconductor Lasers (AREA)
JP6021784A 1984-03-28 1984-03-28 半導体レ−ザ装置 Granted JPS60202981A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6021784A JPS60202981A (ja) 1984-03-28 1984-03-28 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6021784A JPS60202981A (ja) 1984-03-28 1984-03-28 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS60202981A true JPS60202981A (ja) 1985-10-14
JPH0141269B2 JPH0141269B2 (enExample) 1989-09-04

Family

ID=13135772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6021784A Granted JPS60202981A (ja) 1984-03-28 1984-03-28 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS60202981A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63129685A (ja) * 1986-11-20 1988-06-02 Sanyo Electric Co Ltd 半導体レ−ザ
JPH01236670A (ja) * 1988-03-17 1989-09-21 Nec Corp 半導体素子
JPH02174178A (ja) * 1988-12-26 1990-07-05 Sharp Corp 半導体レーザ素子

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
APPL. PHY. LETT. 40 3 EXTREMELY LOW THRESHOLD ALGA AS GRADED-INDEX WAVEGUIDE SEPARATE-CONFINEMENT HETEROSTORUCTURE LASERS GROWN BY MOLECULAR BEAM EPITAXY=1982 *
APPLIED DHYSICS LETTERS=1981 *
APPLIED PHYSICS LETTERS=1981 *
APPLIED PHYSICS LETTERS=1984 *
COLLECTED PAPERS 2ND INTERNATIONAL SYMPOSIUM ON MOLECULAR BEAM EPITAXY AND RELATED CLEAN SURFACE TECHNIQUES=1982 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63129685A (ja) * 1986-11-20 1988-06-02 Sanyo Electric Co Ltd 半導体レ−ザ
JPH01236670A (ja) * 1988-03-17 1989-09-21 Nec Corp 半導体素子
JPH02174178A (ja) * 1988-12-26 1990-07-05 Sharp Corp 半導体レーザ素子

Also Published As

Publication number Publication date
JPH0141269B2 (enExample) 1989-09-04

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