JPS60198856A - 半導体記憶素子とその製造方法 - Google Patents
半導体記憶素子とその製造方法Info
- Publication number
- JPS60198856A JPS60198856A JP59055621A JP5562184A JPS60198856A JP S60198856 A JPS60198856 A JP S60198856A JP 59055621 A JP59055621 A JP 59055621A JP 5562184 A JP5562184 A JP 5562184A JP S60198856 A JPS60198856 A JP S60198856A
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- layer
- silicon
- region
- columnar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000012212 insulator Substances 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 92
- 229910052710 silicon Inorganic materials 0.000 claims description 92
- 239000010703 silicon Substances 0.000 claims description 92
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 239000011810 insulating material Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract description 9
- 238000009825 accumulation Methods 0.000 abstract 2
- 230000005611 electricity Effects 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 82
- 235000012239 silicon dioxide Nutrition 0.000 description 41
- 239000000377 silicon dioxide Substances 0.000 description 41
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 229910052796 boron Inorganic materials 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 101100167744 Caenorhabditis elegans let-711 gene Proteins 0.000 description 1
- 206010011878 Deafness Diseases 0.000 description 1
- 244000088401 Pyrus pyrifolia Species 0.000 description 1
- 235000001630 Pyrus pyrifolia var culta Nutrition 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59055621A JPS60198856A (ja) | 1984-03-23 | 1984-03-23 | 半導体記憶素子とその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59055621A JPS60198856A (ja) | 1984-03-23 | 1984-03-23 | 半導体記憶素子とその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60198856A true JPS60198856A (ja) | 1985-10-08 |
| JPH0434831B2 JPH0434831B2 (enrdf_load_stackoverflow) | 1992-06-09 |
Family
ID=13003848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59055621A Granted JPS60198856A (ja) | 1984-03-23 | 1984-03-23 | 半導体記憶素子とその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60198856A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62257763A (ja) * | 1986-04-30 | 1987-11-10 | Nec Corp | 半導体記憶装置 |
| JPH04233272A (ja) * | 1990-06-28 | 1992-08-21 | Internatl Business Mach Corp <Ibm> | ダブルトレンチ半導体メモリ及びその製造方法 |
| JPH08213570A (ja) * | 1995-12-18 | 1996-08-20 | Nec Corp | 半導体記憶装置 |
-
1984
- 1984-03-23 JP JP59055621A patent/JPS60198856A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62257763A (ja) * | 1986-04-30 | 1987-11-10 | Nec Corp | 半導体記憶装置 |
| JPH04233272A (ja) * | 1990-06-28 | 1992-08-21 | Internatl Business Mach Corp <Ibm> | ダブルトレンチ半導体メモリ及びその製造方法 |
| JPH08213570A (ja) * | 1995-12-18 | 1996-08-20 | Nec Corp | 半導体記憶装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0434831B2 (enrdf_load_stackoverflow) | 1992-06-09 |
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