JPS60198825A - 極微細パタン形成法 - Google Patents
極微細パタン形成法Info
- Publication number
- JPS60198825A JPS60198825A JP5450484A JP5450484A JPS60198825A JP S60198825 A JPS60198825 A JP S60198825A JP 5450484 A JP5450484 A JP 5450484A JP 5450484 A JP5450484 A JP 5450484A JP S60198825 A JPS60198825 A JP S60198825A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etching
- film
- substrate
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 238000005530 etching Methods 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000001312 dry etching Methods 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 239000000470 constituent Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 28
- 239000000758 substrate Substances 0.000 abstract description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 238000001020 plasma etching Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 241000544061 Cuculus canorus Species 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 101150013659 ccnf gene Proteins 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5450484A JPS60198825A (ja) | 1984-03-23 | 1984-03-23 | 極微細パタン形成法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5450484A JPS60198825A (ja) | 1984-03-23 | 1984-03-23 | 極微細パタン形成法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60198825A true JPS60198825A (ja) | 1985-10-08 |
| JPH0438133B2 JPH0438133B2 (enrdf_load_stackoverflow) | 1992-06-23 |
Family
ID=12972457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5450484A Granted JPS60198825A (ja) | 1984-03-23 | 1984-03-23 | 極微細パタン形成法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60198825A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994016854A1 (en) * | 1993-01-19 | 1994-08-04 | Ingenerny Tsentr 'plazmodinamika' | Process for treating the surface of an article and facility for carrying this out |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57118640A (en) * | 1981-01-16 | 1982-07-23 | Matsushita Electronics Corp | Formation of masking pattern |
-
1984
- 1984-03-23 JP JP5450484A patent/JPS60198825A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57118640A (en) * | 1981-01-16 | 1982-07-23 | Matsushita Electronics Corp | Formation of masking pattern |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994016854A1 (en) * | 1993-01-19 | 1994-08-04 | Ingenerny Tsentr 'plazmodinamika' | Process for treating the surface of an article and facility for carrying this out |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0438133B2 (enrdf_load_stackoverflow) | 1992-06-23 |
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