JPS60195798A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS60195798A
JPS60195798A JP59051625A JP5162584A JPS60195798A JP S60195798 A JPS60195798 A JP S60195798A JP 59051625 A JP59051625 A JP 59051625A JP 5162584 A JP5162584 A JP 5162584A JP S60195798 A JPS60195798 A JP S60195798A
Authority
JP
Japan
Prior art keywords
power supply
circuit
voltage
terminal
low voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59051625A
Other languages
Japanese (ja)
Inventor
Ryuichi Matsuo
龍一 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59051625A priority Critical patent/JPS60195798A/en
Publication of JPS60195798A publication Critical patent/JPS60195798A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To form a power supply terminal with one pin so as to enlarge the capacity of a memory and reduce the number of wiring, by providing a circuit which reads out the power supply for a writing voltage and converts the power supply into the power supply for a reading voltage. CONSTITUTION:At the time of readout, a reading voltage VCC of a low voltage is applied to a power supply terminal 12 and also to the output terminal OUT of a regulated power supply circuit 13, and then, the reading out operation is performed. On the other hand, at the time of writing, a writing voltage VPP of a high voltage is applied to the power supply terminal 12 and the low voltage VCC is outputted to the output terminal OUT. Therefore, the high voltage VPP is directly supplied to X- and Y-address decoders 2 and 3 and the low voltage VCC is supplied to a peripheral circuit 15, and then, a program control circuit 6 is operated by a program signal P from a control terminal 11. Thus the writing operation is performed.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は、半導体装置に関し、特に書込み電圧電源v
ppの端子と続出し電圧電源vCCの端子とを共用する
ようにした書込み及び消去が可能なEF ROM (E
rasable and Prograa+able 
Read OnlyMe■ory)に関するものである
[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a semiconductor device, and particularly to a write voltage power supply v
An EF ROM (E
rasable and prograa+able
This is related to Read OnlyMe*ory).

(従来技術) 第1図は従来のEPROMの1例のブロック図を示す。(Conventional technology) FIG. 1 shows a block diagram of an example of a conventional EPROM.

図において、lはアドレスバッファ、2゜3はX及びY
アドレスデコーダ、4はメモリアレイ群、5はデータ入
出力回路、6はプログラム制御回路、7は読出し電圧電
源端子、8は書込み電圧電源端子、9はアドレス入力端
子、10はデータ入出力端子、11はプログラム制御端
子である。
In the figure, l is the address buffer, 2゜3 is X and Y
Address decoder, 4 is a memory array group, 5 is a data input/output circuit, 6 is a program control circuit, 7 is a read voltage power supply terminal, 8 is a write voltage power supply terminal, 9 is an address input terminal, 10 is a data input/output terminal, 11 is the program control terminal.

そしてアドレスバッファ1、X及びYアドレスデコーダ
2.3、データ入出力回路5、及びプログラム制御回路
6には端子7を介して続出し電圧型?IJvccが供給
され、又X及びYアドレスデコーダ2.3には端子8を
介して書込み電圧電源vPPが供給されるようになって
いる。
The address buffer 1, the X and Y address decoders 2.3, the data input/output circuit 5, and the program control circuit 6 are connected via a terminal 7 to the voltage type? IJvcc is supplied, and a write voltage power supply vPP is supplied via a terminal 8 to the X and Y address decoders 2.3.

次に動作について説明する。Next, the operation will be explained.

従来のEFROMにおいて、読出しを行なう場合は、端
子7の電圧を続出し電圧vCCである低電圧(通常5V
)に設定するとともに、端子8の電圧を同様に低電圧に
設定し、アドレス入力端子9からアドレスバッファlを
介してアドレスデコーダ2,3にアドレス信号Aを入力
する。するとアドレスデコーダ2.3によって選択され
たメモリアレイ群4の番地の内容がYアドレスデコーダ
3を経て入出力バッファ回路5へ行き、データ入出力端
子10から出力され、こうしてデータDの読出しが行な
われる。
In a conventional EFROM, when reading, the voltage at terminal 7 is continuously input to a low voltage (usually 5V), which is the voltage vCC.
), the voltage at terminal 8 is similarly set to a low voltage, and address signal A is input from address input terminal 9 to address decoders 2 and 3 via address buffer l. Then, the contents of the address of the memory array group 4 selected by the address decoder 2.3 go through the Y address decoder 3 to the input/output buffer circuit 5, and are output from the data input/output terminal 10, thus reading out the data D. .

一方、書込みを行なう場合は、端子7の電圧を低電圧に
維持したまま、端子8の電圧を書込み電圧VPPである
高電圧(通常21〜25v)に設定し、プログラム制御
端子11にプログラム信号Pを入力する。するとプログ
ラム制御回路6が作動してX及びYアドレスデコーダ2
,3をプログラムモードに設定し、このとき選択された
メモリ番地にYアドレスデコーダ3が高電圧を印加し、
こうしてデータDの書込みが行なわれる。
On the other hand, when writing, the voltage at terminal 8 is set to a high voltage (usually 21 to 25 V), which is the write voltage VPP, while the voltage at terminal 7 is maintained at a low voltage, and the program signal P is sent to program control terminal 11. Enter. Then, the program control circuit 6 operates and the X and Y address decoders 2
, 3 to the program mode, and the Y address decoder 3 applies a high voltage to the selected memory address at this time.
In this way, data D is written.

従来のEFROMは以上のように構成されており、読出
し電圧型@VCCの端子と書込み電圧電源vPPの端子
とを別々に設けていたので、電源端子が2端子必要であ
るという欠点があった。
The conventional EFROM is configured as described above, and has a drawback in that two power supply terminals are required because the read voltage type @VCC terminal and the write voltage power supply vPP terminal are provided separately.

〔発明の概要〕[Summary of the invention]

この発明は上記のような従来のものの欠点を除去するた
めになされたもので、書込み電圧電源を続出し電圧電源
に変圧する変圧回路を設けることにより、電源端子を1
つにした半導体装置を提供することを目的としている。
This invention was made in order to eliminate the drawbacks of the conventional ones as described above, and by providing a transformer circuit that sequentially outputs a write voltage power source and transforms it into a voltage power source, the power terminal can be changed to one power source.
The purpose of the present invention is to provide a semiconductor device with improved performance.

〔発明の実施例〕[Embodiments of the invention]

以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第2図は本発明の一実施例による半導体装置のブロック
図を示し、図において、1はアドレスバッファ、2,3
はX及びYアドレスデコーダ、4はメモリアレイ群、5
はデータ入出力回路、6はプログラム制御回路、9はア
ドレス入力端子、IOはデータ入出力端子、11はプロ
グラム制御端子である。12は電源端子、13は安定化
電源回路である。アドレスバッファ1.X及びYアドレ
スデコーダ2,3.データ入出力回路5.及びブYアド
レスデコーダ2,3には電源端子12から′直接に電源
電圧が供給されるようになっている。
FIG. 2 shows a block diagram of a semiconductor device according to an embodiment of the present invention, in which 1 is an address buffer;
are X and Y address decoders, 4 is a memory array group, 5 is
1 is a data input/output circuit, 6 is a program control circuit, 9 is an address input terminal, IO is a data input/output terminal, and 11 is a program control terminal. 12 is a power supply terminal, and 13 is a stabilized power supply circuit. Address buffer 1. X and Y address decoders 2, 3. Data input/output circuit 5. A power supply voltage is directly supplied to the Y address decoders 2 and 3 from the power supply terminal 12.

ここで電源端子1zは、従来の書込み電圧電源端子と読
出し電圧電源端子とを共用した1つの端子であり、読出
し時には続出し電圧(通常5V)が、書込み時には書込
み電圧(通常21〜25V)が印加されるものである。
Here, the power supply terminal 1z is one terminal that shares the conventional write voltage power supply terminal and read voltage power supply terminal, and the continuous voltage (usually 5 V) is applied during reading, and the write voltage (usually 21 to 25 V) is used during writing. It is applied.

また電源端子12に接続される安定化電源回路13は、
電源端子12に続出し電圧VCC(通常5■)が印加さ
れた場合は出力端OUTに読出し電圧VCCをそのまま
出力し、書込み電圧VPP (通常21〜25v)が印
加された場合は該電圧をドロップして続出し電圧V、C
C<通常5V)を出力するというものである。
Further, the stabilized power supply circuit 13 connected to the power supply terminal 12 is
When the continuous voltage VCC (usually 5V) is applied to the power supply terminal 12, the read voltage VCC is output as is to the output terminal OUT, and when the write voltage VPP (usually 21 to 25V) is applied, the voltage is dropped. Then the voltage V, C continues
C<normally 5V).

安定化電源回路13の一構成例を第3図に、その電気的
特性を第4図に示す、第3図においてTrl、Tr2は
ディプレッシッン型のNチャンネルMO3)ランジスタ
である。この安定化電源回路13においては、第41!
lから分かるように、入力端INの電圧がある程度以上
になると出力端OUTの電圧は一定になっている。
An example of the configuration of the stabilized power supply circuit 13 is shown in FIG. 3, and its electrical characteristics are shown in FIG. 4. In FIG. 3, Trl and Tr2 are depressing type N-channel MO3) transistors. In this stabilized power supply circuit 13, the 41st!
As can be seen from 1, when the voltage at the input terminal IN exceeds a certain level, the voltage at the output terminal OUT becomes constant.

なお以上のような構成において、上記X及びYアドレス
デコーダ2,3が高電圧電源の印加時に上記記憶回路に
データを書込み低電圧電源の印加時に上記記憶回路のデ
ータを読出す書込み続出し回路14となっており、又上
記アドレスバンファl、データ入出力回路5及びプログ
ラム制御回路6が低電圧電源の印加によって作動する上
記書込み読出し回路の周辺回路15となっており、さら
に上記安定化電源回路13が高電圧電源の印加時は該電
源を低電圧電源に変圧して上記周辺回路15に供給し低
電圧電源の印加時は該電源をそのまま上記周辺回路15
に供給する変圧回路となっている。
In the above configuration, the X and Y address decoders 2 and 3 write data into the memory circuit when high voltage power is applied, and write successive write circuit 14 reads data from the memory circuit when low voltage power is applied. The address buffer 1, the data input/output circuit 5, and the program control circuit 6 constitute a peripheral circuit 15 of the write/read circuit which is activated by application of a low voltage power supply, and the stabilized power supply circuit 13 transforms the power into a low voltage power and supplies it to the peripheral circuit 15 when a high voltage power is applied, and supplies the power as it is to the peripheral circuit 15 when a low voltage power is applied.
This is a transformer circuit that supplies power to the

次に本装置の動作について説明する。まず、続出し時に
は、電源端子12には低電圧の読出し電圧vCCが加わ
り、安定化電源回路13の出力端OUTにも続出し電圧
VCCが出力され、これにより従来と同様に読出しが可
能である。
Next, the operation of this device will be explained. First, during continuous reading, a low-voltage read voltage vCC is applied to the power supply terminal 12, and the continuous reading voltage VCC is also output to the output terminal OUT of the stabilized power supply circuit 13, so that reading can be performed in the same way as in the conventional case. .

また書込み時には、電源端子12には高電圧の書込み電
圧VPPが加わり、安定化電源回路13の出力端OUT
には低電圧vCCが出力され、これによりX及びYアド
レスデコーダ2.3には直接高電圧vPPが加わり、周
辺回路15には低電圧vCCが加わり、従来と同様にプ
ログラム制御端子11からのプログラム信号Pによって
プログラム制御回路6が作動し、書込みが実行される。
Also, during writing, a high voltage write voltage VPP is applied to the power supply terminal 12, and the output terminal OUT of the stabilized power supply circuit 13 is applied to the power supply terminal 12.
A low voltage vCC is output to the X and Y address decoders 2.3, a high voltage vPP is applied directly to the The program control circuit 6 is activated by the signal P, and writing is executed.

以上のような本実施例の装置では、書込み電圧電源端子
と読出し電圧電源端子とを共用し、高電圧である書込み
電圧の印加時には該電圧を安定化電源回路で書込み電圧
系と読出し電圧系とに分けるようにしたので、電源端子
が1ビンとなり、その結果、余ったビンをアドレス入力
端子等にしてメモリ容量を拡大でき、又プリント基板等
の配線を減少できる。
In the device of this embodiment as described above, the write voltage power supply terminal and the read voltage power supply terminal are shared, and when a high voltage write voltage is applied, the voltage is divided into the write voltage system and the read voltage system by the stabilizing power supply circuit. Since the power supply terminal is divided into 1 bin, the remaining bin can be used as an address input terminal etc. to expand the memory capacity and reduce the number of wiring such as printed circuit boards.

なお、上記実施例では変圧回路として第3図に示す安定
化電源回路を用いたが、これは同様の機能を達成するも
のであれば種々ある安定化電源回路のいかなるものを用
いてもよいことは言うまでもない。
In the above embodiment, the stabilized power supply circuit shown in FIG. 3 was used as the transformer circuit, but any of the various stabilized power supply circuits may be used as long as it achieves the same function. Needless to say.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば、書込み電圧電源端子
と読出し電圧電源端子とを共用し、高電圧電源印加時に
は変圧回路で低電圧に変圧してこれを周辺回路に供給す
るようにしたので、電源端子を1ビンにでき、その結果
メモリ容量の拡大や配線の減少等のすぐれた効果が得ら
れる。
As described above, according to the present invention, the write voltage power supply terminal and the read voltage power supply terminal are shared, and when high voltage power is applied, it is transformed to a low voltage by the transformer circuit and supplied to the peripheral circuit. , the number of power supply terminals can be reduced to one bin, and as a result, excellent effects such as an increase in memory capacity and a reduction in wiring can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来EFROMのブロック図、第2図は本発明
の一実施例によるBFROMのブロック図、第3図は上
記EFROMにおける安定化電源回路の一構成例を示す
図、第4図は上記安定化電源回路の入出力特性を示す図
である。 4・・・メモリアレイ群(記憶回路)、12・・・電源
端子、13・・・安定化電源回路(変圧回路)、14・
・・書込み読出し回路、15・・・周辺回路。 なお図中、同一符号は同−又は相当部分を示す。 代理人 大岩増雄 第2図 第3図 第4図 入力電圧、→ 手続補正書(自発) 5 に 2、発明の名称 牛導体装置 3、補正をする者 、補正の対象 明細書の発明の詳細な説明の欄 、補正の内容 (1) 明細書第3頁第17行の「Yアドレスデコダ3
」を[X及びYアドレスデコーダ2.3」訂正する。 以 上
Fig. 1 is a block diagram of a conventional EFROM, Fig. 2 is a block diagram of a BFROM according to an embodiment of the present invention, Fig. 3 is a diagram showing an example of the configuration of a stabilizing power supply circuit in the above-mentioned EFROM, and Fig. 4 is a block diagram of the above-mentioned EFROM. FIG. 3 is a diagram showing input/output characteristics of a stabilized power supply circuit. 4...Memory array group (memory circuit), 12...Power supply terminal, 13...Stabilized power supply circuit (transformer circuit), 14.
...Writing/reading circuit, 15... Peripheral circuit. In the drawings, the same reference numerals indicate the same or equivalent parts. Agent Masuo Oiwa Figure 2 Figure 3 Figure 4 Input voltage → Procedural amendment (voluntary) 5-2, Name of the invention Cattle conductor device 3, Person making the amendment, Details of the invention in the specification to be amended. Explanation column, content of correction (1) “Y address decoder 3” on page 3, line 17 of the specification
” is corrected to “X and Y address decoder 2.3”. that's all

Claims (1)

【特許請求の範囲】[Claims] (1) データを記憶する記憶回路と、高電圧電源の印
加時に上記記憶回路にデータを書込み低電圧電源の印加
時に上記記憶回路のデータを読出す書込み読出し回路と
、低電圧電源の印加によって作動し上記書込み読出し回
路の書込み読出しを制御する周辺回路と、高電圧電源の
印加時は該電源を低電圧電源に変圧して上記周辺回路に
供給し低電圧電源の印加時は該電源をそのまま上記周辺
回路に供給する変圧回路と、上記書込み読出し回路及び
変圧回路に接続され外部から高電圧電源又は低電圧電源
が印加される1つの電源端子とを備えたことを特徴とす
る半導体装W1゜
(1) A memory circuit that stores data, a write/read circuit that writes data in the memory circuit when a high voltage power supply is applied and reads data from the memory circuit when a low voltage power supply is applied, and is activated by the application of a low voltage power supply. and a peripheral circuit that controls the write/read of the write/read circuit, and when a high voltage power supply is applied, the power supply is transformed into a low voltage power supply and supplied to the above peripheral circuit, and when a low voltage power supply is applied, the power supply is directly connected to the above. A semiconductor device W1゜ characterized by comprising a transformer circuit that supplies peripheral circuits, and one power supply terminal that is connected to the write/read circuit and the transformer circuit and to which a high voltage power supply or a low voltage power supply is applied from the outside.
JP59051625A 1984-03-15 1984-03-15 Semiconductor device Pending JPS60195798A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59051625A JPS60195798A (en) 1984-03-15 1984-03-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59051625A JPS60195798A (en) 1984-03-15 1984-03-15 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS60195798A true JPS60195798A (en) 1985-10-04

Family

ID=12892042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59051625A Pending JPS60195798A (en) 1984-03-15 1984-03-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS60195798A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6419593A (en) * 1987-07-14 1989-01-23 Toshiba Corp Programmable rom
JP2014106990A (en) * 2012-11-28 2014-06-09 Seiko Epson Corp Integrated circuit device, oscillation device, and electronic apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6419593A (en) * 1987-07-14 1989-01-23 Toshiba Corp Programmable rom
JP2014106990A (en) * 2012-11-28 2014-06-09 Seiko Epson Corp Integrated circuit device, oscillation device, and electronic apparatus

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