JPH03283093A - Writing circuit to e2prom - Google Patents

Writing circuit to e2prom

Info

Publication number
JPH03283093A
JPH03283093A JP2082648A JP8264890A JPH03283093A JP H03283093 A JPH03283093 A JP H03283093A JP 2082648 A JP2082648 A JP 2082648A JP 8264890 A JP8264890 A JP 8264890A JP H03283093 A JPH03283093 A JP H03283093A
Authority
JP
Japan
Prior art keywords
write
data
enable signal
prom
write enable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2082648A
Other languages
Japanese (ja)
Inventor
Masumi Takeuchi
竹内 真清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2082648A priority Critical patent/JPH03283093A/en
Publication of JPH03283093A publication Critical patent/JPH03283093A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To reduce the number of times for writing data to the E<2>PROM by providing a circuit which inhibits the writing automatically when writing the data of the same contents while comparing the holding data of the E<2>PROM with input data. CONSTITUTION:A data bit and a write enable signal are inputted from an external part to a buffer circuit 1, and the data bit is outputted as the writing data when the write enable signal is turned on. The E<2>PROM 2 writes the data bit to an internal memory when the write enable signal is turned on, reads out and outputs the holding data bit of the internal memory when the write enable signal is turned off. A comparator 3 compares the data bit with the holding data bit to be outputted from the E<2>PROM 2, and when they are coincident, the write inhibit signal is turned on and outputted. In a gate 4, the write instruction signal to be inputted from the external part is outputted as the write enable signal only when the write inhibit signal is turned off. Thus, the number of times for writing data to the E<2>PROM can be reduced.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は電気的消去形PROMであるE2 PROMへ
の書込み回路に関し、特にE2 PROMへの書き込み
回数を減らすことができるE2 FROMへの書込み回
路に関する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a write circuit for E2 PROM, which is an electrically erasable PROM, and in particular, a write circuit for E2 FROM that can reduce the number of times of writing to E2 PROM. Regarding.

〔従来の技術〕[Conventional technology]

従来のE” FROMへの書込み回路は、E2PROM
に既に書かれている内容と同一の内容のものも書き込め
るようになっているが、同一の内容を書かないようにす
るためには、−たんE2 PROMの内容をCPU等で
読み出し、書こうとする内容が同一であれは書かないよ
うにソフトウェアに禁止処理を行っていた。
The conventional write circuit to E” FROM is E2PROM.
It is now possible to write the same contents as those already written in the E2 PROM, but in order to avoid writing the same contents, it is necessary to read the contents of the E2 PROM with a CPU etc. and write it. The software was prohibited from writing if the content was the same.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のE2 PROMへの書込み回路は、既に
E2 FROMに書かれているのと同一の内容の書き込
みを禁止処理するソフトウェアで行っているので、ソフ
トウェアの処理が繁雑になるという欠点がある。
The conventional writing circuit to the E2 PROM described above uses software that prohibits writing of the same content that has already been written to the E2 FROM, and therefore has the disadvantage that the software processing becomes complicated.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のE2 PROMへの書込み回路は、外部からデ
ータビットと書き込みイネーブル信号とが入力され、前
記書き込みイネーブル信号がオンの時に前記データビッ
トを書き込みデータとして出力するバッファ回路と、前
記書き込みイネーブル信号がオンの時前北データビット
を内部メモリに書き込み、前記書き込みイネーブル信号
がオフの時前記内部メモリの保持データビットを読み出
して出力するE2 FROMと、前記データビットと前
記E2 FROMより出力される保持データビットとが
比較されて一致した時に、書き込み禁止信号をオンとし
て出力する比較器と、外部から入力される書き込み指示
信号が前記書き込み禁止信号のオフの時のみ前記書き込
み指示信号を書き込みイネーブル信号として出力するゲ
ートとを有する。
A write circuit for an E2 PROM of the present invention receives data bits and a write enable signal from the outside, and includes a buffer circuit that outputs the data bits as write data when the write enable signal is on, and a buffer circuit that outputs the data bits as write data when the write enable signal is on. an E2 FROM that writes the previous data bit to the internal memory when the write enable signal is on, and reads and outputs the data bit held in the internal memory when the write enable signal is off; and the data bit and the held data output from the E2 FROM. A comparator that outputs a write inhibit signal as ON when the bits are compared and match, and outputs the write instruction signal as a write enable signal only when the write inhibit signal input from the outside is OFF. It has a gate.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例のプロ・ツク図、第2図は本
実施例の信号のタイミングチャートである。
FIG. 1 is a block diagram of one embodiment of the present invention, and FIG. 2 is a signal timing chart of this embodiment.

第1図において、バッファ回路1はnビ・ソト入力のデ
ータ(第2図(a))を端子5A〜5Nを経て入力する
と、端子6を経て入力される書き込みイネーブル信号(
第2図(e))がオンの時のみnビットのデータ入力を
端子7A〜7Nに出力する(第2図(b))。一方、E
2 PROMは端子6から入力される書き込みイネーブ
ル信号がオンの時には端子7A〜7Nを経て入力される
nビ・ントのデータを内部メモリに書き込み、オフの時
にはnビットの内部メモリ保持データを端子7A〜7N
に出力する。また、比較器3は端子5A〜5Nのnとッ
トデータと前述の端子7A〜7N4こ出力されたE2 
FROMの内部メモリ保持データとを入力し比較する。
In FIG. 1, when the buffer circuit 1 receives n-bi soto input data (FIG. 2(a)) through terminals 5A to 5N, a write enable signal (
Only when FIG. 2(e)) is on, n-bit data input is output to the terminals 7A to 7N (FIG. 2(b)). On the other hand, E
2 When the write enable signal input from terminal 6 is on, the PROM writes n bits of data input via terminals 7A to 7N to the internal memory, and when it is off, it writes n bits of data held in the internal memory to terminal 7A. ~7N
Output to. Also, the comparator 3 outputs the n cut data from the terminals 5A to 5N and the E2 output from the terminals 7A to 7N4.
Input and compare data held in the internal memory of FROM.

その結果データ内容が一致している場合には、端子8に
書き込み禁止信号を出力する(第2図(d))。ゲート
4は端子8の書き込み禁止信号と端子9を経て外部から
入力される書き込み指示(第2図(C〉)とを入力して
、書き込み禁止信号がオフの時だけ書き込み指示信号を
端子6に出力して書き込みイネーブル信号として出力す
る(第2図(e))。
If the data contents match as a result, a write inhibit signal is output to the terminal 8 (FIG. 2(d)). Gate 4 inputs the write inhibit signal from terminal 8 and a write instruction (see FIG. 2 (C)) input from the outside via terminal 9, and sends the write instruction signal to terminal 6 only when the write inhibit signal is off. It is output as a write enable signal (FIG. 2(e)).

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、E2 PROMの保持デ
ータと入力データとの比較器により同一の内容のデータ
を書こうとうすとき自動的に書き込み禁止にしてしまう
回路を備えることにより、余分な書き込みを削減できる
。したがってE2PROMの書き込み回数を減じること
ができるので、E2 PROMを長寿命化できる効果が
ある。
As explained above, the present invention prevents redundant writing by providing a circuit that automatically disables writing when attempting to write data with the same content using a comparator between data held in the E2 PROM and input data. It can be reduced. Therefore, the number of times the E2PROM is written can be reduced, which has the effect of extending the life of the E2PROM.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例のブロック、第2図は本実施
例のタイミングチャートである。 1・・・バッファ回路、2・・・E2 PROM、3・
・・比較器、4・・・ゲート、5A〜5N、6.7A〜
7N。 8.9−°゛端子°      代;人弁?:士同原 
晋策1 図 茶2図
FIG. 1 is a block diagram of an embodiment of the present invention, and FIG. 2 is a timing chart of this embodiment. 1...Buffer circuit, 2...E2 PROM, 3.
...Comparator, 4...Gate, 5A~5N, 6.7A~
7N. 8.9−°゛Terminal°; human speech? : Shidohara
Shinsaku 1 Diagram 2

Claims (1)

【特許請求の範囲】[Claims]  外部からデータビットと書き込みイネーブル信号とが
入力され、前記書き込みイネーブル信号がオンの時に前
記データビットを書き込みデータとして出力するバッフ
ァ回路と、前記書き込みイネーブル信号がオンの時前記
データビットを内部メモリに書き込み、前記書き込みイ
ネーブル信号がオフの時前記内部メモリの保持データビ
ットを読み出して出力するE^2PROMと、前記デー
タビットと前記E^2PROMより出力される保持デー
タビットとが比較されて一致した時に、書き込み禁止信
号をオンとして出力する比較器と、外部から入力される
書き込み指示信号が前記書き込み禁止信号のオフの時の
み前記書き込み指示信号を書き込みイネーブル信号とし
て出力するゲートとを有することを特徴とするE^2P
ROMへの書込み回路。
A buffer circuit receives data bits and a write enable signal from the outside, outputs the data bits as write data when the write enable signal is on, and writes the data bits into an internal memory when the write enable signal is on. , when the E^2PROM reads and outputs the data bits held in the internal memory when the write enable signal is off, and the data bits and the data bits outputted from the E^2PROM are compared and match, The device is characterized by comprising a comparator that outputs a write inhibit signal as ON, and a gate that outputs the write instruction signal as a write enable signal only when the write instruction signal inputted from the outside is OFF. E^2P
Write circuit to ROM.
JP2082648A 1990-03-29 1990-03-29 Writing circuit to e2prom Pending JPH03283093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2082648A JPH03283093A (en) 1990-03-29 1990-03-29 Writing circuit to e2prom

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2082648A JPH03283093A (en) 1990-03-29 1990-03-29 Writing circuit to e2prom

Publications (1)

Publication Number Publication Date
JPH03283093A true JPH03283093A (en) 1991-12-13

Family

ID=13780251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2082648A Pending JPH03283093A (en) 1990-03-29 1990-03-29 Writing circuit to e2prom

Country Status (1)

Country Link
JP (1) JPH03283093A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0764868A (en) * 1993-08-24 1995-03-10 Melco:Kk Storage updating device
JPH0935470A (en) * 1995-07-13 1997-02-07 Nec Corp Nonvolatile memory integrated circuit
US7453728B2 (en) 2003-04-22 2008-11-18 Kabushiki Kaisha Toshiba Data storage system with enhanced reliability with respect to data destruction caused by reading-out of the data

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0764868A (en) * 1993-08-24 1995-03-10 Melco:Kk Storage updating device
JPH0935470A (en) * 1995-07-13 1997-02-07 Nec Corp Nonvolatile memory integrated circuit
US7453728B2 (en) 2003-04-22 2008-11-18 Kabushiki Kaisha Toshiba Data storage system with enhanced reliability with respect to data destruction caused by reading-out of the data

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