JPS60195097A - フエライト単結晶の製造法 - Google Patents

フエライト単結晶の製造法

Info

Publication number
JPS60195097A
JPS60195097A JP59053231A JP5323184A JPS60195097A JP S60195097 A JPS60195097 A JP S60195097A JP 59053231 A JP59053231 A JP 59053231A JP 5323184 A JP5323184 A JP 5323184A JP S60195097 A JPS60195097 A JP S60195097A
Authority
JP
Japan
Prior art keywords
ferrite
single crystal
polycrystalline
crystal
grain growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59053231A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0211559B2 (enrdf_load_stackoverflow
Inventor
Haruo Tomita
富田 春雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP59053231A priority Critical patent/JPS60195097A/ja
Publication of JPS60195097A publication Critical patent/JPS60195097A/ja
Publication of JPH0211559B2 publication Critical patent/JPH0211559B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00Single-crystal growth directly from the solid state
    • C30B1/02Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/24Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. ortho ferrites

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59053231A 1984-03-19 1984-03-19 フエライト単結晶の製造法 Granted JPS60195097A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59053231A JPS60195097A (ja) 1984-03-19 1984-03-19 フエライト単結晶の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59053231A JPS60195097A (ja) 1984-03-19 1984-03-19 フエライト単結晶の製造法

Publications (2)

Publication Number Publication Date
JPS60195097A true JPS60195097A (ja) 1985-10-03
JPH0211559B2 JPH0211559B2 (enrdf_load_stackoverflow) 1990-03-14

Family

ID=12937043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59053231A Granted JPS60195097A (ja) 1984-03-19 1984-03-19 フエライト単結晶の製造法

Country Status (1)

Country Link
JP (1) JPS60195097A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0397700A (ja) * 1989-09-07 1991-04-23 Shin Etsu Chem Co Ltd 接合フェライトの製造方法
JPH0397699A (ja) * 1989-09-07 1991-04-23 Shin Etsu Chem Co Ltd 接合フェライトの製造方法
US6048394A (en) * 1997-08-14 2000-04-11 Competitive Technologies Of Pa, Inc. Method for growing single crystals from polycrystalline precursors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5978998A (ja) * 1982-10-22 1984-05-08 Matsushita Electric Ind Co Ltd 単結晶フエライトの製造法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5978998A (ja) * 1982-10-22 1984-05-08 Matsushita Electric Ind Co Ltd 単結晶フエライトの製造法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0397700A (ja) * 1989-09-07 1991-04-23 Shin Etsu Chem Co Ltd 接合フェライトの製造方法
JPH0397699A (ja) * 1989-09-07 1991-04-23 Shin Etsu Chem Co Ltd 接合フェライトの製造方法
US6048394A (en) * 1997-08-14 2000-04-11 Competitive Technologies Of Pa, Inc. Method for growing single crystals from polycrystalline precursors

Also Published As

Publication number Publication date
JPH0211559B2 (enrdf_load_stackoverflow) 1990-03-14

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