JPS60187997A - 読み出し専用メモリ - Google Patents

読み出し専用メモリ

Info

Publication number
JPS60187997A
JPS60187997A JP59042321A JP4232184A JPS60187997A JP S60187997 A JPS60187997 A JP S60187997A JP 59042321 A JP59042321 A JP 59042321A JP 4232184 A JP4232184 A JP 4232184A JP S60187997 A JPS60187997 A JP S60187997A
Authority
JP
Japan
Prior art keywords
rom
power supply
transistor
field effect
period
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59042321A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0412559B2 (enrdf_load_stackoverflow
Inventor
Akira Yazawa
矢沢　晃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59042321A priority Critical patent/JPS60187997A/ja
Publication of JPS60187997A publication Critical patent/JPS60187997A/ja
Publication of JPH0412559B2 publication Critical patent/JPH0412559B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP59042321A 1984-03-06 1984-03-06 読み出し専用メモリ Granted JPS60187997A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59042321A JPS60187997A (ja) 1984-03-06 1984-03-06 読み出し専用メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59042321A JPS60187997A (ja) 1984-03-06 1984-03-06 読み出し専用メモリ

Publications (2)

Publication Number Publication Date
JPS60187997A true JPS60187997A (ja) 1985-09-25
JPH0412559B2 JPH0412559B2 (enrdf_load_stackoverflow) 1992-03-04

Family

ID=12632748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59042321A Granted JPS60187997A (ja) 1984-03-06 1984-03-06 読み出し専用メモリ

Country Status (1)

Country Link
JP (1) JPS60187997A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03252995A (ja) * 1990-02-20 1991-11-12 Samsung Electron Co Ltd Ｒｏｍ回路
US5241497A (en) * 1990-06-14 1993-08-31 Creative Integrated Systems, Inc. VLSI memory with increased memory access speed, increased memory cell density and decreased parasitic capacitance

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54157446A (en) * 1978-06-02 1979-12-12 Seiko Epson Corp Reading exclusive memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54157446A (en) * 1978-06-02 1979-12-12 Seiko Epson Corp Reading exclusive memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03252995A (ja) * 1990-02-20 1991-11-12 Samsung Electron Co Ltd Ｒｏｍ回路
US5241497A (en) * 1990-06-14 1993-08-31 Creative Integrated Systems, Inc. VLSI memory with increased memory access speed, increased memory cell density and decreased parasitic capacitance

Also Published As

Publication number Publication date
JPH0412559B2 (enrdf_load_stackoverflow) 1992-03-04

Similar Documents

Publication Publication Date Title
EP1255254B1 (en) Word line driver for a semiconductor memory device
US4843261A (en) Complementary output, high-density CMOS decoder/driver circuit for semiconductor memories
US8830721B2 (en) Encoded read-only memory (ROM) bitcell, array, and architecture
US7800407B1 (en) Multiple voltage mode pre-charging and selective level shifting
JPH06203556A (ja) Ｄｒａｍのレベルシフト・ドライバ回路
JP3754593B2 (ja) データビットを記憶するメモリーセルを有する集積回路および集積回路において書き込みデータビットをメモリーセルに書き込む方法
US4489400A (en) Serially banked read only memory
US6349049B1 (en) High speed low power content addressable memory
JPH0727716B2 (ja) メモリのデコ−ド・ドライブ回路
US5604712A (en) Fast word line decoder for memory devices
JPS60187997A (ja) 読み出し専用メモリ
JPH07142989A (ja) レベル変換回路
US6084804A (en) Memory row driver with parasitic diode pull-down function
JPS5828676B2 (ja) デコ−ダ回路
US5469385A (en) Output buffer with boost from voltage supplies
JPH10149683A (ja) ドライブ配線電荷再利用方法及びｍｏｓ型半導体装置
US11380370B2 (en) Semiconductor device having a charge pump
JPS6120293A (ja) 半導体メモリ装置
KR20030004123A (ko) 저 전압 디지털 ｒｏｍ 회로 및 방법
GB2296585A (en) Row driver decoder for semiconductor memory
JPH07182869A (ja) 半導体記憶装置のデータ書き込み方法及び半導体記憶装置
JPH02158997A (ja) 記憶装置
JP2625991B2 (ja) マスクｒｏｍ装置
JPS6131559B2 (enrdf_load_stackoverflow)
JPS59186196A (ja) 横型レシオレスｒｏｍ