JPH0412559B2 - - Google Patents

Info

Publication number
JPH0412559B2
JPH0412559B2 JP59042321A JP4232184A JPH0412559B2 JP H0412559 B2 JPH0412559 B2 JP H0412559B2 JP 59042321 A JP59042321 A JP 59042321A JP 4232184 A JP4232184 A JP 4232184A JP H0412559 B2 JPH0412559 B2 JP H0412559B2
Authority
JP
Japan
Prior art keywords
output
line
signal line
lines
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59042321A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60187997A (ja
Inventor
Akira Yazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59042321A priority Critical patent/JPS60187997A/ja
Publication of JPS60187997A publication Critical patent/JPS60187997A/ja
Publication of JPH0412559B2 publication Critical patent/JPH0412559B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP59042321A 1984-03-06 1984-03-06 読み出し専用メモリ Granted JPS60187997A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59042321A JPS60187997A (ja) 1984-03-06 1984-03-06 読み出し専用メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59042321A JPS60187997A (ja) 1984-03-06 1984-03-06 読み出し専用メモリ

Publications (2)

Publication Number Publication Date
JPS60187997A JPS60187997A (ja) 1985-09-25
JPH0412559B2 true JPH0412559B2 (enrdf_load_stackoverflow) 1992-03-04

Family

ID=12632748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59042321A Granted JPS60187997A (ja) 1984-03-06 1984-03-06 読み出し専用メモリ

Country Status (1)

Country Link
JP (1) JPS60187997A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930000815B1 (ko) * 1990-02-20 1993-02-05 삼성전자 주식회사 Rom 회로
EP0461904A3 (en) * 1990-06-14 1992-09-09 Creative Integrated Systems, Inc. An improved semiconductor read-only vlsi memory

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032915B2 (ja) * 1978-06-02 1985-07-31 セイコーエプソン株式会社 読み出し専用メモリ−

Also Published As

Publication number Publication date
JPS60187997A (ja) 1985-09-25

Similar Documents

Publication Publication Date Title
US5311482A (en) Semiconductor integrated circuit
US4485460A (en) ROM coupling reduction circuitry
US4240151A (en) Semiconductor read only memory
EP0471289A1 (en) High speed output buffer unit preliminarily shifting output voltage level
JP4072127B2 (ja) 半導体集積回路
US6744659B1 (en) Source-biased memory cell array
JPS61237292A (ja) 半導体記憶装置
JPH0814995B2 (ja) 半導体メモリ
US6046931A (en) Method and apparatus for a RAM circuit having N-nary output interface
US6268807B1 (en) Priority encoder/read only memory (ROM) combination
JPH0412559B2 (enrdf_load_stackoverflow)
JP2770271B2 (ja) メモリセルからハイアラーキに構成されたメモリ
US4651305A (en) Sense amplifier bit line isolation scheme
JPS6258077B2 (enrdf_load_stackoverflow)
US7039822B2 (en) Integrated circuit memory architecture with selectively offset data and address delays to minimize skew and provide synchronization of signals at the input/output section
JP2504410B2 (ja) 半導体記憶装置
US5675542A (en) Memory bit-line pull-up scheme
US6172922B1 (en) Semiconductor memory device having a single transistor two functions as a GND/Y selecting transistor and a precharge selecting transistor
JPS5819791A (ja) 半導体記憶装置
US6069836A (en) Method and apparatus for a RAM circuit having N-nary word line generation
JP2621628B2 (ja) 半導体メモリ
JPH0224896A (ja) 半導体メモリ
KR0167679B1 (ko) 듀얼 커런트패스를 구비하는 로우어드레스버퍼
US6118716A (en) Method and apparatus for an address triggered RAM circuit
JP2869369B2 (ja) 半導体記憶装置におけるデータの読み出し回路