JPS60186499A - 人工ダイヤモンドの析出生成方法 - Google Patents

人工ダイヤモンドの析出生成方法

Info

Publication number
JPS60186499A
JPS60186499A JP59041650A JP4165084A JPS60186499A JP S60186499 A JPS60186499 A JP S60186499A JP 59041650 A JP59041650 A JP 59041650A JP 4165084 A JP4165084 A JP 4165084A JP S60186499 A JPS60186499 A JP S60186499A
Authority
JP
Japan
Prior art keywords
substrate
heated
artificial diamond
diamond
ultraviolet light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59041650A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6358799B2 (enExample
Inventor
Noribumi Kikuchi
菊池　則文
Takayuki Shingyouchi
新行内　隆之
Hiroaki Yamashita
山下　博明
Akio Nishiyama
昭雄 西山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP59041650A priority Critical patent/JPS60186499A/ja
Publication of JPS60186499A publication Critical patent/JPS60186499A/ja
Publication of JPS6358799B2 publication Critical patent/JPS6358799B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59041650A 1984-03-05 1984-03-05 人工ダイヤモンドの析出生成方法 Granted JPS60186499A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59041650A JPS60186499A (ja) 1984-03-05 1984-03-05 人工ダイヤモンドの析出生成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59041650A JPS60186499A (ja) 1984-03-05 1984-03-05 人工ダイヤモンドの析出生成方法

Publications (2)

Publication Number Publication Date
JPS60186499A true JPS60186499A (ja) 1985-09-21
JPS6358799B2 JPS6358799B2 (enExample) 1988-11-16

Family

ID=12614227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59041650A Granted JPS60186499A (ja) 1984-03-05 1984-03-05 人工ダイヤモンドの析出生成方法

Country Status (1)

Country Link
JP (1) JPS60186499A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4816286A (en) * 1985-11-25 1989-03-28 Showa Denko Kabushiki Kaisha Process for synthesis of diamond by CVD
JPH01103992A (ja) * 1987-10-14 1989-04-21 Idemitsu Petrochem Co Ltd ダイヤモンド膜の製造方法
US5110577A (en) * 1990-01-12 1992-05-05 Ford Motor Company Process of depositing a carbon film having metallic properties
US5252174A (en) * 1989-06-19 1993-10-12 Matsushita Electric Industrial Co., Ltd. Method for manufacturing substrates for depositing diamond thin films
US5340401A (en) * 1989-01-06 1994-08-23 Celestech Inc. Diamond deposition cell

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583636A (ja) * 1981-06-29 1983-01-10 Seiko Epson Corp 気相成長装置及び気相成長方法
JPS5891100A (ja) * 1981-11-25 1983-05-30 Natl Inst For Res In Inorg Mater ダイヤモンドの合成法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583636A (ja) * 1981-06-29 1983-01-10 Seiko Epson Corp 気相成長装置及び気相成長方法
JPS5891100A (ja) * 1981-11-25 1983-05-30 Natl Inst For Res In Inorg Mater ダイヤモンドの合成法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4816286A (en) * 1985-11-25 1989-03-28 Showa Denko Kabushiki Kaisha Process for synthesis of diamond by CVD
JPH01103992A (ja) * 1987-10-14 1989-04-21 Idemitsu Petrochem Co Ltd ダイヤモンド膜の製造方法
US5340401A (en) * 1989-01-06 1994-08-23 Celestech Inc. Diamond deposition cell
US5252174A (en) * 1989-06-19 1993-10-12 Matsushita Electric Industrial Co., Ltd. Method for manufacturing substrates for depositing diamond thin films
US5110577A (en) * 1990-01-12 1992-05-05 Ford Motor Company Process of depositing a carbon film having metallic properties

Also Published As

Publication number Publication date
JPS6358799B2 (enExample) 1988-11-16

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