JPS60182128A - 薄膜形成装置 - Google Patents

薄膜形成装置

Info

Publication number
JPS60182128A
JPS60182128A JP3604584A JP3604584A JPS60182128A JP S60182128 A JPS60182128 A JP S60182128A JP 3604584 A JP3604584 A JP 3604584A JP 3604584 A JP3604584 A JP 3604584A JP S60182128 A JPS60182128 A JP S60182128A
Authority
JP
Japan
Prior art keywords
reaction vessel
reaction
entrance window
gas
light entrance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3604584A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0544818B2 (enrdf_load_stackoverflow
Inventor
Yasuhiro Mochizuki
康弘 望月
Takaya Suzuki
誉也 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3604584A priority Critical patent/JPS60182128A/ja
Publication of JPS60182128A publication Critical patent/JPS60182128A/ja
Publication of JPH0544818B2 publication Critical patent/JPH0544818B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP3604584A 1984-02-29 1984-02-29 薄膜形成装置 Granted JPS60182128A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3604584A JPS60182128A (ja) 1984-02-29 1984-02-29 薄膜形成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3604584A JPS60182128A (ja) 1984-02-29 1984-02-29 薄膜形成装置

Publications (2)

Publication Number Publication Date
JPS60182128A true JPS60182128A (ja) 1985-09-17
JPH0544818B2 JPH0544818B2 (enrdf_load_stackoverflow) 1993-07-07

Family

ID=12458736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3604584A Granted JPS60182128A (ja) 1984-02-29 1984-02-29 薄膜形成装置

Country Status (1)

Country Link
JP (1) JPS60182128A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3025837U (ja) * 1995-06-09 1996-06-25 佐々木通商株式会社 トレイを兼ねるコーヒーパック等の函

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5239073U (enrdf_load_stackoverflow) * 1975-09-11 1977-03-19
JPS52127065A (en) * 1976-04-16 1977-10-25 Matsushita Electric Ind Co Ltd Gas phase growing method of semiconductor and its device
JPS58119336A (ja) * 1982-01-08 1983-07-15 Ushio Inc 光反応蒸着装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5239073U (enrdf_load_stackoverflow) * 1975-09-11 1977-03-19
JPS52127065A (en) * 1976-04-16 1977-10-25 Matsushita Electric Ind Co Ltd Gas phase growing method of semiconductor and its device
JPS58119336A (ja) * 1982-01-08 1983-07-15 Ushio Inc 光反応蒸着装置

Also Published As

Publication number Publication date
JPH0544818B2 (enrdf_load_stackoverflow) 1993-07-07

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