JPS6017964A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6017964A
JPS6017964A JP58124623A JP12462383A JPS6017964A JP S6017964 A JPS6017964 A JP S6017964A JP 58124623 A JP58124623 A JP 58124623A JP 12462383 A JP12462383 A JP 12462383A JP S6017964 A JPS6017964 A JP S6017964A
Authority
JP
Japan
Prior art keywords
gate
film
semiconductor
source
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58124623A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0566031B2 (enrdf_load_stackoverflow
Inventor
Kazumichi Omura
大村　八通
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58124623A priority Critical patent/JPS6017964A/ja
Publication of JPS6017964A publication Critical patent/JPS6017964A/ja
Publication of JPH0566031B2 publication Critical patent/JPH0566031B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP58124623A 1983-07-11 1983-07-11 半導体装置 Granted JPS6017964A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58124623A JPS6017964A (ja) 1983-07-11 1983-07-11 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58124623A JPS6017964A (ja) 1983-07-11 1983-07-11 半導体装置

Publications (2)

Publication Number Publication Date
JPS6017964A true JPS6017964A (ja) 1985-01-29
JPH0566031B2 JPH0566031B2 (enrdf_load_stackoverflow) 1993-09-20

Family

ID=14889998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58124623A Granted JPS6017964A (ja) 1983-07-11 1983-07-11 半導体装置

Country Status (1)

Country Link
JP (1) JPS6017964A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107861A (ja) * 1983-11-16 1985-06-13 Nippon Precision Saakitsutsu Kk Ｍｏｓ型半導体装置
JPS6427270A (en) * 1987-07-23 1989-01-30 Agency Ind Science Techn Field-effect type semiconductor device
JPH05235337A (ja) * 1992-01-21 1993-09-10 Nippon Precision Circuits Kk Ｍｉｓ型半導体装置
WO2007110940A1 (ja) * 2006-03-29 2007-10-04 Fujitsu Limited 半導体装置及びその製造方法
JP2020508566A (ja) * 2017-02-22 2020-03-19 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 改良された垂直フィン形状を有する垂直電界効果トランジスタ・デバイスの製造

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107861A (ja) * 1983-11-16 1985-06-13 Nippon Precision Saakitsutsu Kk Ｍｏｓ型半導体装置
JPS6427270A (en) * 1987-07-23 1989-01-30 Agency Ind Science Techn Field-effect type semiconductor device
JPH05235337A (ja) * 1992-01-21 1993-09-10 Nippon Precision Circuits Kk Ｍｉｓ型半導体装置
WO2007110940A1 (ja) * 2006-03-29 2007-10-04 Fujitsu Limited 半導体装置及びその製造方法
JP4755245B2 (ja) * 2006-03-29 2011-08-24 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2020508566A (ja) * 2017-02-22 2020-03-19 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 改良された垂直フィン形状を有する垂直電界効果トランジスタ・デバイスの製造

Also Published As

Publication number Publication date
JPH0566031B2 (enrdf_load_stackoverflow) 1993-09-20

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