JPS60178635A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60178635A
JPS60178635A JP59033525A JP3352584A JPS60178635A JP S60178635 A JPS60178635 A JP S60178635A JP 59033525 A JP59033525 A JP 59033525A JP 3352584 A JP3352584 A JP 3352584A JP S60178635 A JPS60178635 A JP S60178635A
Authority
JP
Japan
Prior art keywords
resist film
contact hole
size
insulating film
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59033525A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0476207B2 (enrdf_load_stackoverflow
Inventor
Takashi Maruyama
隆司 丸山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59033525A priority Critical patent/JPS60178635A/ja
Publication of JPS60178635A publication Critical patent/JPS60178635A/ja
Publication of JPH0476207B2 publication Critical patent/JPH0476207B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59033525A 1984-02-24 1984-02-24 半導体装置の製造方法 Granted JPS60178635A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59033525A JPS60178635A (ja) 1984-02-24 1984-02-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59033525A JPS60178635A (ja) 1984-02-24 1984-02-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60178635A true JPS60178635A (ja) 1985-09-12
JPH0476207B2 JPH0476207B2 (enrdf_load_stackoverflow) 1992-12-03

Family

ID=12388957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59033525A Granted JPS60178635A (ja) 1984-02-24 1984-02-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60178635A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681483A (zh) * 2012-09-05 2014-03-26 凌巨科技股份有限公司 改善透明导电层断线的方法及其结构

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681483A (zh) * 2012-09-05 2014-03-26 凌巨科技股份有限公司 改善透明导电层断线的方法及其结构

Also Published As

Publication number Publication date
JPH0476207B2 (enrdf_load_stackoverflow) 1992-12-03

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees