JPS60165716A - マスクレスイオン注入法におけるイオンビ−ム径の測定方法 - Google Patents

マスクレスイオン注入法におけるイオンビ−ム径の測定方法

Info

Publication number
JPS60165716A
JPS60165716A JP59020072A JP2007284A JPS60165716A JP S60165716 A JPS60165716 A JP S60165716A JP 59020072 A JP59020072 A JP 59020072A JP 2007284 A JP2007284 A JP 2007284A JP S60165716 A JPS60165716 A JP S60165716A
Authority
JP
Japan
Prior art keywords
ion beam
beam diameter
diameter
square hole
intensity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59020072A
Other languages
English (en)
Japanese (ja)
Other versions
JPH026219B2 (https=
Inventor
Eizo Miyauchi
宮内　栄三
Hiroshi Arimoto
宏 有本
Toshio Hashimoto
橋本　寿夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59020072A priority Critical patent/JPS60165716A/ja
Publication of JPS60165716A publication Critical patent/JPS60165716A/ja
Publication of JPH026219B2 publication Critical patent/JPH026219B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping

Landscapes

  • Measurement Of Radiation (AREA)
JP59020072A 1984-02-08 1984-02-08 マスクレスイオン注入法におけるイオンビ−ム径の測定方法 Granted JPS60165716A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59020072A JPS60165716A (ja) 1984-02-08 1984-02-08 マスクレスイオン注入法におけるイオンビ−ム径の測定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59020072A JPS60165716A (ja) 1984-02-08 1984-02-08 マスクレスイオン注入法におけるイオンビ−ム径の測定方法

Publications (2)

Publication Number Publication Date
JPS60165716A true JPS60165716A (ja) 1985-08-28
JPH026219B2 JPH026219B2 (https=) 1990-02-08

Family

ID=12016894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59020072A Granted JPS60165716A (ja) 1984-02-08 1984-02-08 マスクレスイオン注入法におけるイオンビ−ム径の測定方法

Country Status (1)

Country Link
JP (1) JPS60165716A (https=)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAPANESE JOURNAL OF APPLIED PHYSICS=1983 *

Also Published As

Publication number Publication date
JPH026219B2 (https=) 1990-02-08

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