JPS60163456A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPS60163456A
JPS60163456A JP59018747A JP1874784A JPS60163456A JP S60163456 A JPS60163456 A JP S60163456A JP 59018747 A JP59018747 A JP 59018747A JP 1874784 A JP1874784 A JP 1874784A JP S60163456 A JPS60163456 A JP S60163456A
Authority
JP
Japan
Prior art keywords
transistors
transistor
gate electrode
regions
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59018747A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0352226B2 (enrdf_load_stackoverflow
Inventor
Kazutami Arimoto
和民 有本
Michihiro Yamada
山田　通裕
Koichiro Masuko
益子　耕一郎
Toshifumi Kobayashi
小林　稔史
Hiroshi Miyamoto
博司 宮本
Kiichi Morooka
諸岡　毅一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59018747A priority Critical patent/JPS60163456A/ja
Publication of JPS60163456A publication Critical patent/JPS60163456A/ja
Publication of JPH0352226B2 publication Critical patent/JPH0352226B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP59018747A 1984-02-03 1984-02-03 半導体集積回路 Granted JPS60163456A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59018747A JPS60163456A (ja) 1984-02-03 1984-02-03 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59018747A JPS60163456A (ja) 1984-02-03 1984-02-03 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS60163456A true JPS60163456A (ja) 1985-08-26
JPH0352226B2 JPH0352226B2 (enrdf_load_stackoverflow) 1991-08-09

Family

ID=11980242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59018747A Granted JPS60163456A (ja) 1984-02-03 1984-02-03 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS60163456A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119316A (ja) * 1986-11-07 1988-05-24 Fujitsu Ltd フリツプフロツプ回路
JPH08222643A (ja) * 1995-02-10 1996-08-30 Nec Corp 半導体装置の入力保護回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119316A (ja) * 1986-11-07 1988-05-24 Fujitsu Ltd フリツプフロツプ回路
JPH08222643A (ja) * 1995-02-10 1996-08-30 Nec Corp 半導体装置の入力保護回路

Also Published As

Publication number Publication date
JPH0352226B2 (enrdf_load_stackoverflow) 1991-08-09

Similar Documents

Publication Publication Date Title
US6972450B2 (en) SRAM cell design for soft error rate immunity
JP3467416B2 (ja) 半導体記憶装置及びその製造方法
US10553585B2 (en) Semiconductor device
JPH10178110A (ja) 半導体記憶装置
JP2001053167A (ja) 半導体記憶装置
US5227649A (en) Circuit layout and method for VLSI circuits having local interconnects
US11842999B2 (en) Semiconductor device without a break region
US6496435B2 (en) Sense amplifier control circuit of semiconductor memory device
JP3684232B2 (ja) 半導体装置
JP2531827B2 (ja) 半導体装置及びその製造方法
JPS60163456A (ja) 半導体集積回路
US6117736A (en) Method of fabricating insulated-gate field-effect transistors having different gate capacitances
CN104751876B (zh) 双端口sram结构
JPS63160241A (ja) スタンダ−ドセル方式の半導体集積回路
KR19980024416A (ko) 반도체 집적 회로
JPH06140592A (ja) 半導体装置
US6218225B1 (en) Apparatus and method for high density CMOS gate arrays
JPS60242585A (ja) 半導体記憶装置
JPS61208698A (ja) 半導体記憶装置
JP2704037B2 (ja) 半導体記憶回路装置
JPS63164093A (ja) 半導体記憶装置
JPH03108184A (ja) 半導体集積回路
KR20010009890A (ko) 입·출력핀 상호간 캐패시턴스 매칭용 메모리칩 구조
JPH05160357A (ja) 半導体装置
JP2000323682A (ja) 半導体集積回路装置