JPS60161392A - 単結晶薄膜を形成するための分子線エピタキシヤル成長装置 - Google Patents
単結晶薄膜を形成するための分子線エピタキシヤル成長装置Info
- Publication number
- JPS60161392A JPS60161392A JP1206184A JP1206184A JPS60161392A JP S60161392 A JPS60161392 A JP S60161392A JP 1206184 A JP1206184 A JP 1206184A JP 1206184 A JP1206184 A JP 1206184A JP S60161392 A JPS60161392 A JP S60161392A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- partition plate
- substrate holder
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 75
- 239000013078 crystal Substances 0.000 title claims abstract description 42
- 230000008021 deposition Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 238000005192 partition Methods 0.000 claims abstract description 37
- 210000004027 cell Anatomy 0.000 claims description 47
- 239000002994 raw material Substances 0.000 claims description 32
- 230000004907 flux Effects 0.000 claims description 3
- 210000000352 storage cell Anatomy 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 abstract description 31
- 239000004065 semiconductor Substances 0.000 abstract description 26
- 239000000203 mixture Substances 0.000 abstract description 18
- 230000006866 deterioration Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 description 17
- 239000010410 layer Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 12
- 238000005259 measurement Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 241000238631 Hexapoda Species 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1206184A JPS60161392A (ja) | 1984-01-27 | 1984-01-27 | 単結晶薄膜を形成するための分子線エピタキシヤル成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1206184A JPS60161392A (ja) | 1984-01-27 | 1984-01-27 | 単結晶薄膜を形成するための分子線エピタキシヤル成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60161392A true JPS60161392A (ja) | 1985-08-23 |
| JPS6247838B2 JPS6247838B2 (enExample) | 1987-10-09 |
Family
ID=11795081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1206184A Granted JPS60161392A (ja) | 1984-01-27 | 1984-01-27 | 単結晶薄膜を形成するための分子線エピタキシヤル成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60161392A (enExample) |
-
1984
- 1984-01-27 JP JP1206184A patent/JPS60161392A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6247838B2 (enExample) | 1987-10-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |