JPS60154646A - Semiconductor device - Google Patents

Abstract

PURPOSE:To enable a plurality of bonding pads and wire bonding without increasing the number of leads by extending arbitrary lead to the position capable of wire bonding with a plurality of bonding pads, and forming substantially in a pectinated shape. CONSTITUTION:A plurality of leads 6 are arranged and formed substantially at the prescribed interval substantially at the prescribed distance from the end of a pellet mounting unit 2 around the unit, and power leads 6a of them are extended and formed in U-shape of part of a pectinated shape to be interposed at both sides of the ends of two or more leads 6. Accordingly, one lead 6a and a plurality of power pads 5a, 5b can be wire bonded without crossing a pad 5 for other signal formed between spaced power pads 5a and 5b and a wire 7 for connecting the lead 6 corresponding to the pads.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a technique that is effective when applied to improving the reliability of semiconductor devices.

[Background technology]

As pellets become more highly integrated, it becomes difficult to stably supply the R force to the entire circuit formed in the pellet. Therefore, it is considered necessary to form a plurality of power supply sections to the circuit by dispersing them into pellets.

In semiconductor devices, which are bonded with wires such as gold, the leads are arranged around the pellet attachment part to provide electrical continuity between the circuit part of the pellet and the external terminal.
The power supply section is a bonding plate formed around the circuit forming area of the pellet.

In such a semiconductor device, when power is supplied from one power lead to power supply pads, which are multiple power supply parts formed apart from each other, multiple wires are bonded to the bonding parts of the same lead. It is physically difficult to bond, and even if bonding can be done, one or more power wires are always connected to signal wires connecting other leads and bonding pads. There may also be a problem of contact between the wires as they cross over.

Also, Pereso)? In semiconductor devices that require a constant voltage to be applied to the Ti3 surface, a metallized layer (gold-silicon eutectic layer), which is the bullet attachment part, is used as the back electrode. It is formed by connecting with specific leads formed around it.

In this semiconductor device, if multiple bonding bands formed apart from each other need to be at the same potential as the bullet back electrode, multiple wires are bonded to the bonding part of the lead connected to the bullet mounting part. There is a need.

This is because, in order to make an electrical connection with a wire bonder, it is difficult to make an electrical connection unless the wire bonder is a certain distance away from the bonding band.

The inventors have discovered that such a semiconductor device also has the same problem as the case where wire bonding is performed between one power supply lead and a plurality of power supply bands.

[Purpose of the invention]

An object of the present invention is to provide an effective technique that can be applied to electrically connect a plurality of bonding pads of a pellet to a specific electrode.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Summary of the invention]

A brief overview of typical inventions disclosed in this application is as follows.

That is, by extending an arbitrary lead to a position where wire bonding can be performed with a plurality of bonding bands, or by extending a predetermined part of the end of the bullet mounting part, which is a back electrode, to a position where wire bonding can be performed with a bonding pad. By making it possible to wire bond the wires corresponding to the number of bonding pads at positions that approximately correspond to each bonding pad, the wires do not cross over the signal wires (by making it possible to bond wires corresponding to the number of bonding pads). It is possible to electrically connect one lead and a plurality of bonding pads.

[Example 1] FIG. 1 is a cross-sectional view of a semiconductor device made of a ceramic chip carrier type package according to Example 1 of the present invention, taken approximately at the center thereof. Example 10 Semiconductor In the apparatus, a pellet 3 made of silicon single crystal or the like is bonded with a brazing material 4 to a pellet mounting part 2 which is metallized with tungsten at the bottom of a cavity formed in a ceramic package substrate 1, and the pellet is After electrically connecting the bonding band 5 of No. 3 and the bonding portion 7 of the lead 6 made of tungsten or the like arranged around the bullet attachment portion 2 with a gold or aluminum wire 8, It is hermetically sealed with a cap 9 via a low melting point glass 10. Note that the lead 6 is partially buried in the package substrate 1 and the other end is extended to the back surface of the substrate, making it possible to establish electrical continuity with the outside. , is a plan view showing a part of the inside of the cavity in the semiconductor device of Example 10, with bonding wires omitted.

That is, a pellet 3 is attached to a pellet attachment part 2, and a plurality of glue portions 6 are arranged around the pellet attachment part 2 at predetermined intervals at a substantially constant distance from the end of the pellet attachment part. It is formed by forming an array, of which two or more glue parts 6 are extended into an almost U-shape, which is part of a comb, so as to sandwich the tip of the part 6. It is.

As shown in this figure, the leads 6 are arranged at positions approximately corresponding to each bonding pad, and each lead is connected to a corresponding bonding pad and a wire (not shown) at a bonding portion 6a near its tip. It is connected. The power supply lead 6a has its bonding parts 7a and 7b connected to the corresponding power supply pads 5a and 7b.
and 5b by wire bonding.

Therefore, in the semiconductor device of the tenth embodiment, the wires 7 connecting the other signal pads 5 and the corresponding leads 6 formed between the power supply pads 5a and 5b which are separated from each other intersect with each other. Since wire bonding can be performed between one power supply lead 6a and a plurality of power supply pads 5a and 5b without having to do so, the power can be stably supplied to the plurality of power supply pads at the same potential without contact between the wires 7. Since it is possible to supply the same amount of time, reliability can be improved.

Note that the bullet mounting portion 2 and the leads 6 can be easily formed by a conventional method such as printing tungsten paste, and may be plated with gold or the like if necessary.

[Embodiment 2] FIG. 3 is a plan view showing a part of the inside of a cavity of a semiconductor device according to Embodiment 2 of the present invention, with bonding wires omitted.

The semiconductor device of Example 20 is almost the same as the semiconductor device of Example 10, and the inside of the cavity shown in FIG. 3 also shows almost the same part as FIG. 2.

In the semiconductor device of Example 20, two tit source leads 6a and 6b are extended and formed continuously so as to surround a portion 6 of the other tit source. power pads 5a and 5b,
By wire-bonding the bonding portions 7a and 7b of the power leads 6a and 6b, respectively, the same effects as in the first embodiment can be obtained.

In addition, since multiple power supplies are formed in series, it is possible to connect multiple power supply pads when a single lead does not have enough current capacity due to narrower lead widths in highly integrated semiconductor devices. It is capable of supplying stable power.

[Embodiment 3] FIG. 4 shows a part of the inside of a cavity of a semiconductor device according to Embodiment 3 of the present invention, with bonding wires omitted.

The semiconductor device of Example 3 is almost the same as the semiconductor device shown in Example 1, but since it is necessary to apply voltage to the pellet 3 from the back side, the pellet attachment part 2 functions as a back electrode. It is something. Therefore, a portion 6c of one of the leads arranged around the pellet mounting portion 2 is connected to the pellet mounting portion 2.

In the semiconductor device, when it is desired to supply power to the plurality of power supply pads 5a and 5b formed apart from each other at the same voltage as the back electrode, the purpose can be achieved by wire bonding 5b at the bonding portion 7c of 6c. However, if 5a is wire bonded to the same bonding part 7C, it may cross the wire connecting the signal pad formed between 5a and 5b and the other lead 6. become.

Therefore, in the present embodiment 30 semiconductor package, a part of the bullet attachment part nearest to the 111° source pad 5a is extended to form a lead-shaped extension part 11 as shown in FIG. By wire bonding to the power supply pad 5a using the bonding portion 7d, power can be supplied to a plurality of power supply pads at the same potential as the back electrode without intersecting signal wires.

The bellet mounting portion 2 shown in the third embodiment can be easily formed by the method shown in the first embodiment, similar to the second embodiment.

Note that the semiconductor devices 14. of Examples 1 to 3 described above. This can be easily manufactured by a conventional method except for the metallization of the lead 6 or the pellet attachment part 2.

〔effect〕

(1) In a semiconductor device in which leads are arranged and formed around the pellet attachment part, by extending and forming an arbitrary lead, a plurality of bonding pads are formed separately on the pellet. Since wire bonding can be easily performed between the wire and the lead without crossing wires connecting other bonding pads, wire bonding can be performed with multiple bonding pads without increasing the number of leads. Become.

(2) In (1) above, if the extended lead is a power supply lead, power can be supplied to multiple power supply pads at the same potential. Also, it is possible to provide a semiconductor device having highly reliable arithmetic performance.

(3) By extending a plurality of leads that are formed separately and forming them so that they are continuous with each other, even if the current capacity of one lead is small, the leads that are formed separately can be extended. Stable power can be supplied to multiple power supply pads at the same potential.

(4) In a semiconductor device in which leads are formed in an array around a pellet mounting part, and the pellet mounting part is connected to a power supply lead and functions as a back electrode, it corresponds to the power supply lead. By wire bonding the bonding pad to the bonding pad, and extending the nearest bullet attachment part of the other bonding pad formed apart from the bonding pad, the bonding pad is bonded to the bonding pad. Since the extension part can be wire-bonded to other bonding pads formed in a release manner without intersecting the wires connected to the bonding pads formed in the bonding pad, the bonding pads are formed in a release manner. It is possible to reliably supply 'IL force to a plurality of bonding pads at the same potential as the back electrode.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

For example, the metallization of the bullet attachment part and the lead has been explained only using tungsten, but it is not limited to this, and high melting point metals such as molybdenum may also be used, and gold, aluminum, etc. can also be vapor-deposited. . Furthermore, it goes without saying that the shape of the pellet attachment portion and the shape of the lead are not necessarily limited to those shown in the embodiments.

In the above embodiment, a package made of ceramic was described, but the package is not limited to this, and a package made of plastic such as polyimide may be used. In this case, a printed circuit board made of copper or the like may be used as the metallization.

In addition, in the embodiment, only the relationship between the power supply lead and the power supply band has been explained, but the relationship is not limited to this. Needless to say, it can also be applied.

[Application field]

In the above description, the invention made by the present inventor was mainly applied to a semiconductor device consisting of a chimbu carrier type package, which is the background field of application, but the invention is not limited to this, for example,
This technique can be applied to any semiconductor device formed by wire bonding, such as a multi-chip module, and is an effective technique.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing a half-2.1-body device according to Example 1 of the present invention, FIG. 2 is a schematic partial plan view showing the inside of a cavity in a semiconductor device according to Example 10, and FIG. FIG. 4 is a schematic plan view showing the inside of a cavity in a semiconductor device according to a second embodiment of the invention. FIG. 4 is a schematic plan view showing the inside of a cavity in a semiconductor device according to a third embodiment of the invention. 1...Package board, 2...Bellet mounting part, 3
... Pellet, 4... Brazing metal, 5... Ponding pad, 5a, 5b-... Power supply pad, 6.6a, 6
b, 6c... lead, 7.7a, 7b, 7c, 7cJ
- bonding part, 8... lead, 9... cap, 10... low melting point glass, 11-... extension part. Figure 1 Figure 2 Continued from Figure 1 Page 0 Inventor: Hiroharu Otsuka 0 Inventor: Yuyuki Shirai 0 Inventor: Ken Okutani. Kodaira Departure Center 1 Hirai Center J) Hirahaku Se

Claims (1)

[Scope of Claims] 1. A semiconductor device in which leads are arranged and formed around a pellet mounting portion, characterized in that any lead is formed to extend. 2. The semiconductor device according to claim 1, wherein the leads are formed in a comb shape. 3. The semiconductor device according to claim 1, wherein a plurality of leads are formed continuously. 4. In a semiconductor device in which leads are arranged and formed around a pellet mounting part, and the pellet mounting part is connected to a specific lead, a part of the end of the pellet mounting part is formed to extend. A semiconductor device characterized by: 5. The semiconductor device according to claim 4, wherein a part of the end of the pellet mounting portion is formed in a doped shape.