JPS60154575A - 半導体圧力検出素子の製造方法 - Google Patents

半導体圧力検出素子の製造方法

Info

Publication number
JPS60154575A
JPS60154575A JP59009961A JP996184A JPS60154575A JP S60154575 A JPS60154575 A JP S60154575A JP 59009961 A JP59009961 A JP 59009961A JP 996184 A JP996184 A JP 996184A JP S60154575 A JPS60154575 A JP S60154575A
Authority
JP
Japan
Prior art keywords
etching
semiconductor substrate
sensing element
semiconductor
pressure sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59009961A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0337749B2 (enrdf_load_stackoverflow
Inventor
Haruo Yamauchi
山内　治男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Azbil Corp
Original Assignee
Azbil Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Azbil Corp filed Critical Azbil Corp
Priority to JP59009961A priority Critical patent/JPS60154575A/ja
Publication of JPS60154575A publication Critical patent/JPS60154575A/ja
Publication of JPH0337749B2 publication Critical patent/JPH0337749B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Weting (AREA)
JP59009961A 1984-01-25 1984-01-25 半導体圧力検出素子の製造方法 Granted JPS60154575A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59009961A JPS60154575A (ja) 1984-01-25 1984-01-25 半導体圧力検出素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59009961A JPS60154575A (ja) 1984-01-25 1984-01-25 半導体圧力検出素子の製造方法

Publications (2)

Publication Number Publication Date
JPS60154575A true JPS60154575A (ja) 1985-08-14
JPH0337749B2 JPH0337749B2 (enrdf_load_stackoverflow) 1991-06-06

Family

ID=11734533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59009961A Granted JPS60154575A (ja) 1984-01-25 1984-01-25 半導体圧力検出素子の製造方法

Country Status (1)

Country Link
JP (1) JPS60154575A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02203570A (ja) * 1989-02-01 1990-08-13 Fujikura Ltd 単結晶薄膜部材の製造方法
JPH02128934U (enrdf_load_stackoverflow) * 1989-03-31 1990-10-24
JPH02281760A (ja) * 1989-04-24 1990-11-19 Fujikura Ltd 単結晶薄模部材の製造方法
US5223086A (en) * 1991-03-11 1993-06-29 Nippondenso Co., Ltd. Method of producing an acceleration sensor of a semiconductor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02203570A (ja) * 1989-02-01 1990-08-13 Fujikura Ltd 単結晶薄膜部材の製造方法
JPH02128934U (enrdf_load_stackoverflow) * 1989-03-31 1990-10-24
JPH02281760A (ja) * 1989-04-24 1990-11-19 Fujikura Ltd 単結晶薄模部材の製造方法
US5223086A (en) * 1991-03-11 1993-06-29 Nippondenso Co., Ltd. Method of producing an acceleration sensor of a semiconductor

Also Published As

Publication number Publication date
JPH0337749B2 (enrdf_load_stackoverflow) 1991-06-06

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