JPS60148185A - 半導体リングレ−ザジヤイロ - Google Patents
半導体リングレ−ザジヤイロInfo
- Publication number
- JPS60148185A JPS60148185A JP416484A JP416484A JPS60148185A JP S60148185 A JPS60148185 A JP S60148185A JP 416484 A JP416484 A JP 416484A JP 416484 A JP416484 A JP 416484A JP S60148185 A JPS60148185 A JP S60148185A
- Authority
- JP
- Japan
- Prior art keywords
- ring
- semiconductor
- laser
- resonator
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000010168 coupling process Methods 0.000 claims abstract description 15
- 238000005859 coupling reaction Methods 0.000 claims abstract description 14
- 230000008878 coupling Effects 0.000 claims abstract description 12
- 230000010355 oscillation Effects 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 14
- 230000035559 beat frequency Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 3
- 238000000206 photolithography Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 101150110330 CRAT gene Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1021—Coupled cavities
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/58—Turn-sensitive devices without moving masses
- G01C19/64—Gyrometers using the Sagnac effect, i.e. rotation-induced shifts between counter-rotating electromagnetic beams
- G01C19/66—Ring laser gyrometers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Gyroscopes (AREA)
- Optical Integrated Circuits (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP416484A JPS60148185A (ja) | 1984-01-12 | 1984-01-12 | 半導体リングレ−ザジヤイロ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP416484A JPS60148185A (ja) | 1984-01-12 | 1984-01-12 | 半導体リングレ−ザジヤイロ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60148185A true JPS60148185A (ja) | 1985-08-05 |
| JPH0550159B2 JPH0550159B2 (enExample) | 1993-07-28 |
Family
ID=11577100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP416484A Granted JPS60148185A (ja) | 1984-01-12 | 1984-01-12 | 半導体リングレ−ザジヤイロ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60148185A (enExample) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01163706A (ja) * | 1987-03-26 | 1989-06-28 | Nippon Denso Co Ltd | 多方向光導波回路 |
| EP0995971A3 (en) * | 1998-10-19 | 2000-10-18 | Canon Kabushiki Kaisha | Gyro and method of operating the same |
| US6275296B1 (en) | 1998-10-19 | 2001-08-14 | Canon Kabushiki Kaisha | Semiconductor laser gyro with modulated driving power source |
| US6297883B1 (en) | 1998-10-19 | 2001-10-02 | Canon Kabushiki Kaisha | Ring laser gas gyro with beat signal detection from current, voltage, or impedance of the ring laser |
| EP1219926A1 (en) | 2000-11-28 | 2002-07-03 | Politecnico di Bari | Integrated optical angular velocity sensor |
| US6445454B1 (en) | 1998-10-19 | 2002-09-03 | Canon Kabushiki Kaisha | Gyro having modulated frequency driven laser |
| US6559949B1 (en) | 1999-01-22 | 2003-05-06 | Canon Kabushiki Kaisha | Gyro apparatus and gyroscope with multiple interfering laser beams affecting an electrical signal flowing therethrough |
| US6654126B1 (en) | 1999-12-01 | 2003-11-25 | Canon Kabushiki Kaisha | Optical gyro with specific clock/calculation circuit |
| US6665330B1 (en) | 1999-09-14 | 2003-12-16 | Canon Kabushiki Kaisha | Semiconductor device having a semiconductor ring laser with a circularly formed ridge optical waveguide |
| US6741354B2 (en) | 1999-01-18 | 2004-05-25 | Canon Kabushiki Kaisha | Laser device having an optical waveguide for discerning movement of an optical gyroscope and an optical gyroscope utilizing same |
| WO2005085759A1 (ja) * | 2004-03-03 | 2005-09-15 | Advanced Telecommunications Research Institute International | 半導体レーザを用いたジャイロ |
| JP2008002954A (ja) * | 2006-06-22 | 2008-01-10 | Advanced Telecommunication Research Institute International | 光ジャイロ |
| JP2008197058A (ja) * | 2007-02-15 | 2008-08-28 | Japan Aviation Electronics Industry Ltd | リングレーザジャイロ |
| EP1413016B1 (en) * | 2001-08-01 | 2008-09-17 | Binoptics Corporation | Curved waveguide ring laser |
| WO2009054467A1 (ja) * | 2007-10-25 | 2009-04-30 | Advanced Telecommunications Research Institute International | 半導体レーザジャイロ |
| JP2009103647A (ja) * | 2007-10-25 | 2009-05-14 | Advanced Telecommunication Research Institute International | 半導体レーザジャイロ |
| JP2009103646A (ja) * | 2007-10-25 | 2009-05-14 | Advanced Telecommunication Research Institute International | 半導体レーザジャイロ |
| WO2010004015A1 (fr) * | 2008-07-10 | 2010-01-14 | Commissariat A L'energie Atomique | Dispositif a coupleur selectif en longueur d'onde pour collection de la lumiere emise par une source laser. |
| CN103384950A (zh) * | 2013-01-21 | 2013-11-06 | 华为技术有限公司 | 激光器波导装置 |
-
1984
- 1984-01-12 JP JP416484A patent/JPS60148185A/ja active Granted
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01163706A (ja) * | 1987-03-26 | 1989-06-28 | Nippon Denso Co Ltd | 多方向光導波回路 |
| EP0995971A3 (en) * | 1998-10-19 | 2000-10-18 | Canon Kabushiki Kaisha | Gyro and method of operating the same |
| US6275296B1 (en) | 1998-10-19 | 2001-08-14 | Canon Kabushiki Kaisha | Semiconductor laser gyro with modulated driving power source |
| US6297883B1 (en) | 1998-10-19 | 2001-10-02 | Canon Kabushiki Kaisha | Ring laser gas gyro with beat signal detection from current, voltage, or impedance of the ring laser |
| US6445454B1 (en) | 1998-10-19 | 2002-09-03 | Canon Kabushiki Kaisha | Gyro having modulated frequency driven laser |
| US6493089B2 (en) | 1998-10-19 | 2002-12-10 | Canon Kabushiki Kaisha | Gyro and method of operating the same with a modulated frequency signal |
| US6741354B2 (en) | 1999-01-18 | 2004-05-25 | Canon Kabushiki Kaisha | Laser device having an optical waveguide for discerning movement of an optical gyroscope and an optical gyroscope utilizing same |
| US6559949B1 (en) | 1999-01-22 | 2003-05-06 | Canon Kabushiki Kaisha | Gyro apparatus and gyroscope with multiple interfering laser beams affecting an electrical signal flowing therethrough |
| US6665330B1 (en) | 1999-09-14 | 2003-12-16 | Canon Kabushiki Kaisha | Semiconductor device having a semiconductor ring laser with a circularly formed ridge optical waveguide |
| US6654126B1 (en) | 1999-12-01 | 2003-11-25 | Canon Kabushiki Kaisha | Optical gyro with specific clock/calculation circuit |
| EP1219926A1 (en) | 2000-11-28 | 2002-07-03 | Politecnico di Bari | Integrated optical angular velocity sensor |
| EP1413016B1 (en) * | 2001-08-01 | 2008-09-17 | Binoptics Corporation | Curved waveguide ring laser |
| JP2005249547A (ja) * | 2004-03-03 | 2005-09-15 | Advanced Telecommunication Research Institute International | 半導体レーザジャイロ |
| WO2005085759A1 (ja) * | 2004-03-03 | 2005-09-15 | Advanced Telecommunications Research Institute International | 半導体レーザを用いたジャイロ |
| US7835008B2 (en) | 2004-03-03 | 2010-11-16 | Advanced Telecommunications Research Institute International | Gyro employing semiconductor laser |
| JP2008002954A (ja) * | 2006-06-22 | 2008-01-10 | Advanced Telecommunication Research Institute International | 光ジャイロ |
| JP2008197058A (ja) * | 2007-02-15 | 2008-08-28 | Japan Aviation Electronics Industry Ltd | リングレーザジャイロ |
| WO2009054467A1 (ja) * | 2007-10-25 | 2009-04-30 | Advanced Telecommunications Research Institute International | 半導体レーザジャイロ |
| JP2009103647A (ja) * | 2007-10-25 | 2009-05-14 | Advanced Telecommunication Research Institute International | 半導体レーザジャイロ |
| JP2009103646A (ja) * | 2007-10-25 | 2009-05-14 | Advanced Telecommunication Research Institute International | 半導体レーザジャイロ |
| WO2010004015A1 (fr) * | 2008-07-10 | 2010-01-14 | Commissariat A L'energie Atomique | Dispositif a coupleur selectif en longueur d'onde pour collection de la lumiere emise par une source laser. |
| US8483527B2 (en) | 2008-07-10 | 2013-07-09 | Commissariat à l'énergie atomique et aux énergies alternatives | Device with wavelength selective coupler for collecting light emitted by a laser source |
| CN103384950A (zh) * | 2013-01-21 | 2013-11-06 | 华为技术有限公司 | 激光器波导装置 |
| WO2014110830A1 (zh) * | 2013-01-21 | 2014-07-24 | 华为技术有限公司 | 激光器波导装置 |
| CN103384950B (zh) * | 2013-01-21 | 2015-09-30 | 华为技术有限公司 | 激光器波导装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0550159B2 (enExample) | 1993-07-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS60148185A (ja) | 半導体リングレ−ザジヤイロ | |
| US6937342B2 (en) | Monolithically integrated semiconductor unidirectional ring laser rotation sensor/gyroscope | |
| US4658403A (en) | Optical element in semiconductor laser device having a diffraction grating and improved resonance characteristics | |
| JPH0682863B2 (ja) | 発光ダイオード | |
| US20070291273A1 (en) | Laser gyro and electronic device using the same | |
| JPH04174317A (ja) | 半導体レーザジャイロ | |
| JP3099921B2 (ja) | 受光素子付き面発光型半導体レーザ装置 | |
| JPH10125989A (ja) | 光集積素子 | |
| US4297651A (en) | Methods for simultaneous suppression of laser pulsations and continuous monitoring of output power | |
| JP3531917B2 (ja) | リングレーザー | |
| JPS62150895A (ja) | モニタ付分布帰還形半導体レ−ザ | |
| US4644552A (en) | Semiconductor laser | |
| JPH05167197A (ja) | 光半導体装置 | |
| JP2002344079A (ja) | 半導体リングレーザ装置及びその作製方法 | |
| JPS63228795A (ja) | 分布帰還型半導体レ−ザ | |
| JP3685925B2 (ja) | スーパールミネッセントダイオード | |
| JPS6232680A (ja) | 集積型半導体レ−ザ | |
| JP2574806B2 (ja) | 半導体レ−ザ装置 | |
| JPH03195076A (ja) | 外部共振器型波長可変半導体レーザ | |
| JPS5992592A (ja) | 半導体発光素子 | |
| JP2001124565A (ja) | 光ジャイロ及びこれを用いる回転方向の検知方法 | |
| JPS62140488A (ja) | 半導体レ−ザ装置 | |
| JPS5880887A (ja) | 半導体レ−ザ・フオトダイオ−ド光集積化素子 | |
| JPS627186A (ja) | 半導体レ−ザ装置 | |
| JP2002340564A (ja) | 半導体リングレーザ装置及びそれを用いた光ジャイロスコープ |