WO2009054467A1 - 半導体レーザジャイロ - Google Patents

半導体レーザジャイロ Download PDF

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Publication number
WO2009054467A1
WO2009054467A1 PCT/JP2008/069262 JP2008069262W WO2009054467A1 WO 2009054467 A1 WO2009054467 A1 WO 2009054467A1 JP 2008069262 W JP2008069262 W JP 2008069262W WO 2009054467 A1 WO2009054467 A1 WO 2009054467A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser beam
light
layer
clad layer
region
Prior art date
Application number
PCT/JP2008/069262
Other languages
English (en)
French (fr)
Inventor
Tomoko Tanaka
Takehiro Fukushima
Keizo Inagaki
Takahisa Harayama
Original Assignee
Advanced Telecommunications Research Institute International
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007277609A external-priority patent/JP2009103646A/ja
Priority claimed from JP2007277610A external-priority patent/JP2009103647A/ja
Application filed by Advanced Telecommunications Research Institute International filed Critical Advanced Telecommunications Research Institute International
Publication of WO2009054467A1 publication Critical patent/WO2009054467A1/ja

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/58—Turn-sensitive devices without moving masses
    • G01C19/64—Gyrometers using the Sagnac effect, i.e. rotation-induced shifts between counter-rotating electromagnetic beams
    • G01C19/66—Ring laser gyrometers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Semiconductor Lasers (AREA)
  • Gyroscopes (AREA)

Abstract

　本発明のジャイロは、環状の光軌道（２３）を有する共振器を備え光軌道（２３）を互いに逆方向に伝播するレーザ光Ｌ１およびＬ２を発生させるレーザ素子（２０）と、レーザ光Ｌ１およびＬ２のそれぞれを光軌道２３から引き出すための引き出し手段と、引き出されたレーザ光Ｌ１とレーザ光Ｌ２との周波数差を検出するための検出手段とを備える。共振器の光軌道（２３）の部分には、光増幅を生じるアクティブ領域（２１）と光増幅を生じないパッシブ領域（２２）とが存在する。アクティブ領域（２１）の活性層およびパッシブ領域（２２）の光ガイド層は、それぞれ、下方のクラッド層と上方のクラッド層とに挟まれている。上方のクラッド層がリッジ状であり、下方のクラッド層が平面状に広がっている。そして、アクティブ領域の活性層と、パッシブ領域の光ガイド層とが、バット－ジョイント構造で結合されている。
PCT/JP2008/069262 2007-10-25 2008-10-23 半導体レーザジャイロ WO2009054467A1 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-277610 2007-10-25
JP2007277609A JP2009103646A (ja) 2007-10-25 2007-10-25 半導体レーザジャイロ
JP2007-277609 2007-10-25
JP2007277610A JP2009103647A (ja) 2007-10-25 2007-10-25 半導体レーザジャイロ

Publications (1)

Publication Number Publication Date
WO2009054467A1 true WO2009054467A1 (ja) 2009-04-30

Family

ID=40579569

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069262 WO2009054467A1 (ja) 2007-10-25 2008-10-23 半導体レーザジャイロ

Country Status (1)

Country Link
WO (1) WO2009054467A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014042049A1 (ja) * 2012-09-14 2014-03-20 株式会社ブイ・テクノロジー 半導体リングレーザー装置
WO2014201964A1 (zh) * 2013-06-18 2014-12-24 中国科学院苏州纳米技术与纳米仿生研究所 环形腔器件及其制作方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148185A (ja) * 1984-01-12 1985-08-05 Sumitomo Electric Ind Ltd 半導体リングレ−ザジヤイロ
JPH05288556A (ja) * 1992-04-06 1993-11-02 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザジャイロ
US5319727A (en) * 1992-12-28 1994-06-07 Honeywell Inc. Ion-beam deposited, gain enhanced ring resonators
JPH08507174A (ja) * 1993-02-11 1996-07-30 ハネウエル・インコーポレーテッド 超安定リング共振器及びレーザーを製造する技法
JP2000208862A (ja) * 1999-01-11 2000-07-28 Nec Corp 半導体光集積素子及びその製造方法
JP2007266260A (ja) * 2006-03-28 2007-10-11 Nec Corp 位相制御機能を有する光半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148185A (ja) * 1984-01-12 1985-08-05 Sumitomo Electric Ind Ltd 半導体リングレ−ザジヤイロ
JPH05288556A (ja) * 1992-04-06 1993-11-02 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザジャイロ
US5319727A (en) * 1992-12-28 1994-06-07 Honeywell Inc. Ion-beam deposited, gain enhanced ring resonators
JPH08507174A (ja) * 1993-02-11 1996-07-30 ハネウエル・インコーポレーテッド 超安定リング共振器及びレーザーを製造する技法
JP2000208862A (ja) * 1999-01-11 2000-07-28 Nec Corp 半導体光集積素子及びその製造方法
JP2007266260A (ja) * 2006-03-28 2007-10-11 Nec Corp 位相制御機能を有する光半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014042049A1 (ja) * 2012-09-14 2014-03-20 株式会社ブイ・テクノロジー 半導体リングレーザー装置
JP2014059170A (ja) * 2012-09-14 2014-04-03 V Technology Co Ltd 半導体リングレーザー装置
CN104782004A (zh) * 2012-09-14 2015-07-15 株式会社V技术 半导体环形激光装置
WO2014201964A1 (zh) * 2013-06-18 2014-12-24 中国科学院苏州纳米技术与纳米仿生研究所 环形腔器件及其制作方法

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