JPS60140813A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60140813A
JPS60140813A JP25004683A JP25004683A JPS60140813A JP S60140813 A JPS60140813 A JP S60140813A JP 25004683 A JP25004683 A JP 25004683A JP 25004683 A JP25004683 A JP 25004683A JP S60140813 A JPS60140813 A JP S60140813A
Authority
JP
Japan
Prior art keywords
film
single crystal
substrate
silicon
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP25004683A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0475649B2 (cs
Inventor
Ryoichi Mukai
良一 向井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP25004683A priority Critical patent/JPS60140813A/ja
Publication of JPS60140813A publication Critical patent/JPS60140813A/ja
Publication of JPH0475649B2 publication Critical patent/JPH0475649B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP25004683A 1983-12-28 1983-12-28 半導体装置の製造方法 Granted JPS60140813A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25004683A JPS60140813A (ja) 1983-12-28 1983-12-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25004683A JPS60140813A (ja) 1983-12-28 1983-12-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60140813A true JPS60140813A (ja) 1985-07-25
JPH0475649B2 JPH0475649B2 (cs) 1992-12-01

Family

ID=17202005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25004683A Granted JPS60140813A (ja) 1983-12-28 1983-12-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60140813A (cs)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63111610A (ja) * 1986-10-30 1988-05-16 Sharp Corp 半導体基板
JPS63291416A (ja) * 1987-05-25 1988-11-29 Sharp Corp 半導体基板
JPH01154512A (ja) * 1987-12-11 1989-06-16 Hitachi Ltd 半導体結晶の製造方法
US5173443A (en) * 1987-02-13 1992-12-22 Northrop Corporation Method of manufacture of optically transparent electrically conductive semiconductor windows
US5250452A (en) * 1990-04-27 1993-10-05 North Carolina State University Deposition of germanium thin films on silicon dioxide employing interposed polysilicon layer
US5259918A (en) * 1991-06-12 1993-11-09 International Business Machines Corporation Heteroepitaxial growth of germanium on silicon by UHV/CVD
US5286334A (en) * 1991-10-21 1994-02-15 International Business Machines Corporation Nonselective germanium deposition by UHV/CVD
JP2010226079A (ja) * 2008-10-02 2010-10-07 Sumitomo Chemical Co Ltd 半導体基板、電子デバイス、および半導体基板の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63111610A (ja) * 1986-10-30 1988-05-16 Sharp Corp 半導体基板
US5173443A (en) * 1987-02-13 1992-12-22 Northrop Corporation Method of manufacture of optically transparent electrically conductive semiconductor windows
JPS63291416A (ja) * 1987-05-25 1988-11-29 Sharp Corp 半導体基板
JPH01154512A (ja) * 1987-12-11 1989-06-16 Hitachi Ltd 半導体結晶の製造方法
US5250452A (en) * 1990-04-27 1993-10-05 North Carolina State University Deposition of germanium thin films on silicon dioxide employing interposed polysilicon layer
US5259918A (en) * 1991-06-12 1993-11-09 International Business Machines Corporation Heteroepitaxial growth of germanium on silicon by UHV/CVD
US5286334A (en) * 1991-10-21 1994-02-15 International Business Machines Corporation Nonselective germanium deposition by UHV/CVD
JP2010226079A (ja) * 2008-10-02 2010-10-07 Sumitomo Chemical Co Ltd 半導体基板、電子デバイス、および半導体基板の製造方法

Also Published As

Publication number Publication date
JPH0475649B2 (cs) 1992-12-01

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