JPS60138921A - パタ−ン形状検査装置 - Google Patents

パタ−ン形状検査装置

Info

Publication number
JPS60138921A
JPS60138921A JP58246398A JP24639883A JPS60138921A JP S60138921 A JPS60138921 A JP S60138921A JP 58246398 A JP58246398 A JP 58246398A JP 24639883 A JP24639883 A JP 24639883A JP S60138921 A JPS60138921 A JP S60138921A
Authority
JP
Japan
Prior art keywords
pattern
shape
output
reticle
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58246398A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6356702B2 (enrdf_load_stackoverflow
Inventor
Tomohide Watanabe
渡辺　智英
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58246398A priority Critical patent/JPS60138921A/ja
Publication of JPS60138921A publication Critical patent/JPS60138921A/ja
Publication of JPS6356702B2 publication Critical patent/JPS6356702B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Image Processing (AREA)
  • Image Analysis (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
JP58246398A 1983-12-27 1983-12-27 パタ−ン形状検査装置 Granted JPS60138921A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58246398A JPS60138921A (ja) 1983-12-27 1983-12-27 パタ−ン形状検査装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58246398A JPS60138921A (ja) 1983-12-27 1983-12-27 パタ−ン形状検査装置

Publications (2)

Publication Number Publication Date
JPS60138921A true JPS60138921A (ja) 1985-07-23
JPS6356702B2 JPS6356702B2 (enrdf_load_stackoverflow) 1988-11-09

Family

ID=17147916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58246398A Granted JPS60138921A (ja) 1983-12-27 1983-12-27 パタ−ン形状検査装置

Country Status (1)

Country Link
JP (1) JPS60138921A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63286752A (ja) * 1987-05-20 1988-11-24 Toshiba Mach Co Ltd パタ−ンの欠陥検査または寸法測定方法
KR100265827B1 (ko) * 1993-10-30 2000-09-15 김영환 레티클 제조 정확도 측정방법
JP2006215528A (ja) * 2005-01-05 2006-08-17 Fujitsu Ltd レチクル検査装置およびレチクル検査方法
JP2013167608A (ja) * 2012-02-17 2013-08-29 Nuflare Technology Inc 検査装置および検査方法
JP2014211352A (ja) * 2013-04-18 2014-11-13 株式会社東芝 テンプレートの検査装置及びテンプレートの検査方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654038A (en) * 1979-10-08 1981-05-13 Toshiba Corp Checking device for shape of photomask
JPS5837923A (ja) * 1981-08-31 1983-03-05 Toshiba Corp フオトマスクの検査装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654038A (en) * 1979-10-08 1981-05-13 Toshiba Corp Checking device for shape of photomask
JPS5837923A (ja) * 1981-08-31 1983-03-05 Toshiba Corp フオトマスクの検査装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63286752A (ja) * 1987-05-20 1988-11-24 Toshiba Mach Co Ltd パタ−ンの欠陥検査または寸法測定方法
KR100265827B1 (ko) * 1993-10-30 2000-09-15 김영환 레티클 제조 정확도 측정방법
JP2006215528A (ja) * 2005-01-05 2006-08-17 Fujitsu Ltd レチクル検査装置およびレチクル検査方法
JP2013167608A (ja) * 2012-02-17 2013-08-29 Nuflare Technology Inc 検査装置および検査方法
JP2014211352A (ja) * 2013-04-18 2014-11-13 株式会社東芝 テンプレートの検査装置及びテンプレートの検査方法

Also Published As

Publication number Publication date
JPS6356702B2 (enrdf_load_stackoverflow) 1988-11-09

Similar Documents

Publication Publication Date Title
US4926489A (en) Reticle inspection system
US4559603A (en) Apparatus for inspecting a circuit pattern drawn on a photomask used in manufacturing large scale integrated circuits
US6141038A (en) Alignment correction prior to image sampling in inspection systems
US6765195B1 (en) Method and apparatus for two-dimensional absolute optical encoding
US5671056A (en) Three-dimensional form measuring apparatus and method
US10643327B2 (en) Inspection method and inspection apparatus
EP0132122B1 (en) Apparatus for inspecting mask for use in manufacturing large scale integrated circuits
JPS59119204A (ja) マ−ク位置検出方法
US6819789B1 (en) Scaling and registration calibration especially in printed circuit board fabrication
JPS643050B2 (enrdf_load_stackoverflow)
JPH08167571A (ja) 位置検出装置及び位置合せ装置
CN116592757A (zh) 一种测量系统的二维精度补偿方法
JPS60138921A (ja) パタ−ン形状検査装置
JP3040845B2 (ja) アライメントマーク
JP3823488B2 (ja) Ｉｃリード浮き検査装置及び検査方法
JPH0658215B2 (ja) 半導体ウエハ上の被検査パターンの欠陥検査方法およびその装置
JP3111869B2 (ja) ２次元位置姿勢測定方法及び装置
JPH05172531A (ja) 距離計測方法
JPH10311705A (ja) 画像入力装置
JP3189796B2 (ja) 欠陥検査方法及び装置
KR20210145010A (ko) 웨이퍼 검사 장치
JPH07302754A (ja) 走査型露光装置
JPH08330219A (ja) 走査型露光装置
JP4261535B2 (ja) マスク検査装置におけるアライメント方法および評価方法
JPH04186717A (ja) 位置合わせ装置、露光装置、及びそれらを用いた半導体素子の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term