JPS60136249A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS60136249A
JPS60136249A JP58243533A JP24353383A JPS60136249A JP S60136249 A JPS60136249 A JP S60136249A JP 58243533 A JP58243533 A JP 58243533A JP 24353383 A JP24353383 A JP 24353383A JP S60136249 A JPS60136249 A JP S60136249A
Authority
JP
Japan
Prior art keywords
transistor
potential
collector
vertical
vertical transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58243533A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0556019B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Tanimoto
谷本　洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58243533A priority Critical patent/JPS60136249A/ja
Publication of JPS60136249A publication Critical patent/JPS60136249A/ja
Publication of JPH0556019B2 publication Critical patent/JPH0556019B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP58243533A 1983-12-23 1983-12-23 半導体装置 Granted JPS60136249A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58243533A JPS60136249A (ja) 1983-12-23 1983-12-23 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58243533A JPS60136249A (ja) 1983-12-23 1983-12-23 半導体装置

Publications (2)

Publication Number Publication Date
JPS60136249A true JPS60136249A (ja) 1985-07-19
JPH0556019B2 JPH0556019B2 (enrdf_load_stackoverflow) 1993-08-18

Family

ID=17105304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58243533A Granted JPS60136249A (ja) 1983-12-23 1983-12-23 半導体装置

Country Status (1)

Country Link
JP (1) JPS60136249A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62126704A (ja) * 1985-11-20 1987-06-09 エスジ−エス　マイクロエレツトロニカ　ソチエタ　ペル　アツイオニ 絶縁コレクタ縦方向ｐｎｐトランジスタの寄生接合静電容量を最小にするための装置
JPS62206911A (ja) * 1986-02-28 1987-09-11 エス　ジ−　エス　ミクロエレトロニカ　エス　ピ−　エ− 広帯域増幅器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62126704A (ja) * 1985-11-20 1987-06-09 エスジ−エス　マイクロエレツトロニカ　ソチエタ　ペル　アツイオニ 絶縁コレクタ縦方向ｐｎｐトランジスタの寄生接合静電容量を最小にするための装置
JPS62206911A (ja) * 1986-02-28 1987-09-11 エス　ジ−　エス　ミクロエレトロニカ　エス　ピ−　エ− 広帯域増幅器

Also Published As

Publication number Publication date
JPH0556019B2 (enrdf_load_stackoverflow) 1993-08-18

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