JPS60133701A - バリスタ - Google Patents
バリスタInfo
- Publication number
- JPS60133701A JPS60133701A JP58242834A JP24283483A JPS60133701A JP S60133701 A JPS60133701 A JP S60133701A JP 58242834 A JP58242834 A JP 58242834A JP 24283483 A JP24283483 A JP 24283483A JP S60133701 A JPS60133701 A JP S60133701A
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- conductive layer
- sintered body
- ohmic contact
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000001747 exhibiting effect Effects 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58242834A JPS60133701A (ja) | 1983-12-21 | 1983-12-21 | バリスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58242834A JPS60133701A (ja) | 1983-12-21 | 1983-12-21 | バリスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60133701A true JPS60133701A (ja) | 1985-07-16 |
| JPH0510802B2 JPH0510802B2 (enrdf_load_stackoverflow) | 1993-02-10 |
Family
ID=17094979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58242834A Granted JPS60133701A (ja) | 1983-12-21 | 1983-12-21 | バリスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60133701A (enrdf_load_stackoverflow) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56110201A (en) * | 1980-02-05 | 1981-09-01 | Nippon Denso Co | Method of forming positive temperature coefficient porcelain semiconductor |
| JPH05107201A (ja) * | 1991-10-21 | 1993-04-27 | Toshiba Corp | 水中欠陥検出装置 |
-
1983
- 1983-12-21 JP JP58242834A patent/JPS60133701A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56110201A (en) * | 1980-02-05 | 1981-09-01 | Nippon Denso Co | Method of forming positive temperature coefficient porcelain semiconductor |
| JPH05107201A (ja) * | 1991-10-21 | 1993-04-27 | Toshiba Corp | 水中欠陥検出装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0510802B2 (enrdf_load_stackoverflow) | 1993-02-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS60133701A (ja) | バリスタ | |
| JPS60142503A (ja) | バリスタ | |
| JPH0113365Y2 (enrdf_load_stackoverflow) | ||
| JP2967221B2 (ja) | 正特性サーミスタ素子 | |
| JPS5919364Y2 (ja) | バリスタ | |
| JPH0349365Y2 (enrdf_load_stackoverflow) | ||
| JP2649545B2 (ja) | 酸化亜鉛型バリスタの電極形成方法 | |
| JPS60701A (ja) | オ−ム性電極 | |
| JPS6343876B2 (enrdf_load_stackoverflow) | ||
| JP2533247Y2 (ja) | バリスタ | |
| JPS6320104Y2 (enrdf_load_stackoverflow) | ||
| JPH0214162Y2 (enrdf_load_stackoverflow) | ||
| JPS6225876Y2 (enrdf_load_stackoverflow) | ||
| JPS6010701A (ja) | 正特性サ−ミスタ | |
| JPS6322444B2 (enrdf_load_stackoverflow) | ||
| JPS6228746Y2 (enrdf_load_stackoverflow) | ||
| JP3413929B2 (ja) | 正特性サーミスタの製造方法 | |
| JPH0113361Y2 (enrdf_load_stackoverflow) | ||
| JPS5885502A (ja) | 厚膜バリスタの製造法 | |
| JPS593559Y2 (ja) | サ−ジ吸収器 | |
| JPS6222249B2 (enrdf_load_stackoverflow) | ||
| JP2559524Y2 (ja) | 正特性サーミスタ装置 | |
| JPS6141223Y2 (enrdf_load_stackoverflow) | ||
| JPS63285906A (ja) | 積層セラミックバリスタ | |
| JPS63275150A (ja) | 混成集積回路装置 |