JPS6012761B2 - 電気抵抗器およびその製造方法 - Google Patents
電気抵抗器およびその製造方法Info
- Publication number
- JPS6012761B2 JPS6012761B2 JP51014436A JP1443676A JPS6012761B2 JP S6012761 B2 JPS6012761 B2 JP S6012761B2 JP 51014436 A JP51014436 A JP 51014436A JP 1443676 A JP1443676 A JP 1443676A JP S6012761 B2 JPS6012761 B2 JP S6012761B2
- Authority
- JP
- Japan
- Prior art keywords
- compound
- impurity
- silicon carbide
- doped
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
- H01C7/048—Carbon or carbides
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Ceramic Products (AREA)
- Thermistors And Varistors (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7501811 | 1975-02-17 | ||
NL7501811A NL7501811A (nl) | 1975-02-17 | 1975-02-17 | Elektrische weerstand met een weerstandslichaam uit siliciumcarbide met negatieve temperatuur- coefficient. |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51107498A JPS51107498A (ja) | 1976-09-24 |
JPS6012761B2 true JPS6012761B2 (ja) | 1985-04-03 |
Family
ID=19823187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51014436A Expired JPS6012761B2 (ja) | 1975-02-17 | 1976-02-14 | 電気抵抗器およびその製造方法 |
Country Status (11)
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5363552A (en) * | 1976-11-18 | 1978-06-07 | Matsushita Electric Ind Co Ltd | Thermistor |
JPS5363553A (en) * | 1976-11-18 | 1978-06-07 | Matsushita Electric Ind Co Ltd | Method of manufacturing thermistor |
FR2412920A1 (fr) * | 1977-12-21 | 1979-07-20 | Poudres & Explosifs Ste Nale | Thermistances en bore et leur procede de fabrication |
JP2665834B2 (ja) * | 1991-02-15 | 1997-10-22 | 本田技研工業株式会社 | Fmレーダ |
DE19849471A1 (de) * | 1998-10-21 | 2000-04-27 | Inst Halbleiterphysik Gmbh | Integrierter hochohmiger polykristalliner Siliziumwiderstand und Verfahren zu seiner Herstellung |
-
1975
- 1975-02-17 NL NL7501811A patent/NL7501811A/xx unknown
-
1976
- 1976-02-11 DE DE19762605252 patent/DE2605252A1/de not_active Withdrawn
- 1976-02-13 GB GB574276A patent/GB1529625A/en not_active Expired
- 1976-02-13 IT IT6733576A patent/IT1057192B/it active
- 1976-02-13 CA CA245,680A patent/CA1081450A/en not_active Expired
- 1976-02-13 SE SE7601625A patent/SE405905B/xx not_active IP Right Cessation
- 1976-02-13 AU AU11090/76A patent/AU497881B2/en not_active Expired
- 1976-02-14 JP JP51014436A patent/JPS6012761B2/ja not_active Expired
- 1976-02-16 CH CH187776A patent/CH621015A5/de not_active IP Right Cessation
- 1976-02-16 BE BE164374A patent/BE838626A/xx not_active IP Right Cessation
- 1976-02-17 FR FR7604287A patent/FR2301076A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
IT1057192B (it) | 1982-03-10 |
SE7601625L (sv) | 1976-08-18 |
CA1081450A (en) | 1980-07-15 |
DE2605252A1 (de) | 1976-08-26 |
NL7501811A (nl) | 1976-08-19 |
BE838626A (fr) | 1976-08-16 |
AU1109076A (en) | 1977-08-18 |
FR2301076B1 (enrdf_load_html_response) | 1982-02-12 |
GB1529625A (en) | 1978-10-25 |
FR2301076A1 (fr) | 1976-09-10 |
CH621015A5 (en) | 1980-12-31 |
JPS51107498A (ja) | 1976-09-24 |
AU497881B2 (en) | 1979-01-18 |
SE405905B (sv) | 1979-01-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4806900A (en) | Thermistor and method for producing the same | |
US4120827A (en) | Fuel igniter comprising a novel silicon carbide composition and process for preparing the composition | |
US3899407A (en) | Method of producing thin film devices of doped vanadium oxide material | |
US4205363A (en) | Fuel ignitor comprising a novel silicon carbide composition | |
JPS6012761B2 (ja) | 電気抵抗器およびその製造方法 | |
Andersson | The electrical properties of ultrathin gold films during and after their growth on glass | |
US4086559A (en) | Electric resistor based on silicon carbide having a negative temperature coefficient | |
US4208449A (en) | Method of making an electric resistor having a resistance body consisting of silicon carbide having a negative temperature coefficient | |
US3435399A (en) | Thermistor device and method of producing said device | |
JP2720381B2 (ja) | 任意の電気抵抗率を有する熱分解窒化ホウ素成形体の製造方法 | |
US2941962A (en) | Silicon carbide resistor bodies | |
Rosenblatt et al. | Rate of vaporization of arsenic single crystals and the vaporization coefficient of arsenic | |
US3766511A (en) | Thermistors | |
JPS61191954A (ja) | スズ酸化物薄膜ガスセンサ素子 | |
Siddall et al. | Vacuum-deposited metal film resistors | |
US4228344A (en) | Method for providing electrical connection | |
US3435398A (en) | Thermistor device and method of producing said device | |
JPH0851001A (ja) | セラミック抵抗体 | |
US3040580A (en) | Temperature sensitive device | |
JPH0343761B2 (enrdf_load_html_response) | ||
US3454748A (en) | Variable resistance heating element | |
US6497829B2 (en) | Method of producing silicon carbide: heating and lighting elements | |
JP3145588B2 (ja) | セラミック抵抗体 | |
JP4042714B2 (ja) | 金属抵抗体材料、スパッタリングターゲットおよび抵抗薄膜 | |
JP2562610B2 (ja) | 歪ゲ−ジ用薄膜抵抗体 |