JPS60123086A - 半導体レ−ザの製造方法 - Google Patents

半導体レ−ザの製造方法

Info

Publication number
JPS60123086A
JPS60123086A JP58231859A JP23185983A JPS60123086A JP S60123086 A JPS60123086 A JP S60123086A JP 58231859 A JP58231859 A JP 58231859A JP 23185983 A JP23185983 A JP 23185983A JP S60123086 A JPS60123086 A JP S60123086A
Authority
JP
Japan
Prior art keywords
semiconductor laser
point
laser array
scribing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58231859A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0141268B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Hideaki Noguchi
英明 野口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58231859A priority Critical patent/JPS60123086A/ja
Publication of JPS60123086A publication Critical patent/JPS60123086A/ja
Publication of JPH0141268B2 publication Critical patent/JPH0141268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Dicing (AREA)
  • Semiconductor Lasers (AREA)
JP58231859A 1983-12-08 1983-12-08 半導体レ−ザの製造方法 Granted JPS60123086A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58231859A JPS60123086A (ja) 1983-12-08 1983-12-08 半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58231859A JPS60123086A (ja) 1983-12-08 1983-12-08 半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS60123086A true JPS60123086A (ja) 1985-07-01
JPH0141268B2 JPH0141268B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-09-04

Family

ID=16930132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58231859A Granted JPS60123086A (ja) 1983-12-08 1983-12-08 半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JPS60123086A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5593815A (en) * 1989-07-31 1997-01-14 Goldstar Co., Ltd. Cleaving process in manufacturing a semiconductor laser
US5629233A (en) * 1996-04-04 1997-05-13 Lucent Technologies Inc. Method of making III/V semiconductor lasers
US7183585B2 (en) 2003-10-29 2007-02-27 Nec Corporation Semiconductor device and a method for the manufacture thereof
JP2008160070A (ja) * 2006-11-30 2008-07-10 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
WO2014095903A1 (de) * 2012-12-18 2014-06-26 Osram Opto Semiconductors Gmbh Verfahren zur herstellung von halbleiter-laserelementen und halbleiter-laserelement

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5593815A (en) * 1989-07-31 1997-01-14 Goldstar Co., Ltd. Cleaving process in manufacturing a semiconductor laser
US5629233A (en) * 1996-04-04 1997-05-13 Lucent Technologies Inc. Method of making III/V semiconductor lasers
US7183585B2 (en) 2003-10-29 2007-02-27 Nec Corporation Semiconductor device and a method for the manufacture thereof
JP2008160070A (ja) * 2006-11-30 2008-07-10 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP2009004820A (ja) * 2006-11-30 2009-01-08 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
WO2014095903A1 (de) * 2012-12-18 2014-06-26 Osram Opto Semiconductors Gmbh Verfahren zur herstellung von halbleiter-laserelementen und halbleiter-laserelement
CN104871378A (zh) * 2012-12-18 2015-08-26 奥斯兰姆奥普托半导体有限责任公司 用于制造半导体激光器元件的方法和半导体激光器元件
US9608401B2 (en) 2012-12-18 2017-03-28 Osram Opto Semiconductors Gmbh Method for producing semiconductor laser elements and semi-conductor laser element

Also Published As

Publication number Publication date
JPH0141268B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-09-04

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees