JPS60123050A - 半導体集積回路 - Google Patents
半導体集積回路Info
- Publication number
- JPS60123050A JPS60123050A JP58231754A JP23175483A JPS60123050A JP S60123050 A JPS60123050 A JP S60123050A JP 58231754 A JP58231754 A JP 58231754A JP 23175483 A JP23175483 A JP 23175483A JP S60123050 A JPS60123050 A JP S60123050A
- Authority
- JP
- Japan
- Prior art keywords
- region
- diode
- type
- high concentration
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000009792 diffusion process Methods 0.000 abstract description 33
- 238000000034 method Methods 0.000 abstract description 7
- 239000012535 impurity Substances 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58231754A JPS60123050A (ja) | 1983-12-08 | 1983-12-08 | 半導体集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58231754A JPS60123050A (ja) | 1983-12-08 | 1983-12-08 | 半導体集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60123050A true JPS60123050A (ja) | 1985-07-01 |
| JPH0312782B2 JPH0312782B2 (enrdf_load_stackoverflow) | 1991-02-21 |
Family
ID=16928507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58231754A Granted JPS60123050A (ja) | 1983-12-08 | 1983-12-08 | 半導体集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60123050A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6386480A (ja) * | 1986-09-30 | 1988-04-16 | Agency Of Ind Science & Technol | 半導体集積回路の入力保護回路 |
| JPS63261759A (ja) * | 1987-04-20 | 1988-10-28 | Sanyo Electric Co Ltd | 半導体集積回路 |
-
1983
- 1983-12-08 JP JP58231754A patent/JPS60123050A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6386480A (ja) * | 1986-09-30 | 1988-04-16 | Agency Of Ind Science & Technol | 半導体集積回路の入力保護回路 |
| JPS63261759A (ja) * | 1987-04-20 | 1988-10-28 | Sanyo Electric Co Ltd | 半導体集積回路 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0312782B2 (enrdf_load_stackoverflow) | 1991-02-21 |
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