JPS60111414A - プラズマ気相反応方法およびその製造装置 - Google Patents

プラズマ気相反応方法およびその製造装置

Info

Publication number
JPS60111414A
JPS60111414A JP58219199A JP21919983A JPS60111414A JP S60111414 A JPS60111414 A JP S60111414A JP 58219199 A JP58219199 A JP 58219199A JP 21919983 A JP21919983 A JP 21919983A JP S60111414 A JPS60111414 A JP S60111414A
Authority
JP
Japan
Prior art keywords
reaction
substrate
reactive gas
chamber
space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58219199A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0244141B2 (cg-RX-API-DMAC7.html
Inventor
Shunpei Yamazaki
舜平 山崎
Mamoru Tashiro
田代　衛
Minoru Miyazaki
稔 宮崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP58219199A priority Critical patent/JPS60111414A/ja
Publication of JPS60111414A publication Critical patent/JPS60111414A/ja
Publication of JPH0244141B2 publication Critical patent/JPH0244141B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
JP58219199A 1983-11-22 1983-11-22 プラズマ気相反応方法およびその製造装置 Granted JPS60111414A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58219199A JPS60111414A (ja) 1983-11-22 1983-11-22 プラズマ気相反応方法およびその製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58219199A JPS60111414A (ja) 1983-11-22 1983-11-22 プラズマ気相反応方法およびその製造装置

Publications (2)

Publication Number Publication Date
JPS60111414A true JPS60111414A (ja) 1985-06-17
JPH0244141B2 JPH0244141B2 (cg-RX-API-DMAC7.html) 1990-10-02

Family

ID=16731754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58219199A Granted JPS60111414A (ja) 1983-11-22 1983-11-22 プラズマ気相反応方法およびその製造装置

Country Status (1)

Country Link
JP (1) JPS60111414A (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01298171A (ja) * 1988-05-24 1989-12-01 Semiconductor Energy Lab Co Ltd 薄膜形成装置
JPH0261069A (ja) * 1988-08-26 1990-03-01 Semiconductor Energy Lab Co Ltd 被膜作製方法
TWI470106B (zh) * 2011-03-29 2015-01-21 Pinecone En Inc 多腔體薄膜沈積裝置及其抽氣模組

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5896729A (ja) * 1981-12-03 1983-06-08 Seiko Epson Corp グロ−放電装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5896729A (ja) * 1981-12-03 1983-06-08 Seiko Epson Corp グロ−放電装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01298171A (ja) * 1988-05-24 1989-12-01 Semiconductor Energy Lab Co Ltd 薄膜形成装置
JPH0261069A (ja) * 1988-08-26 1990-03-01 Semiconductor Energy Lab Co Ltd 被膜作製方法
TWI470106B (zh) * 2011-03-29 2015-01-21 Pinecone En Inc 多腔體薄膜沈積裝置及其抽氣模組

Also Published As

Publication number Publication date
JPH0244141B2 (cg-RX-API-DMAC7.html) 1990-10-02

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