JPS6010760A - Electrode part for diode - Google Patents
Electrode part for diodeInfo
- Publication number
- JPS6010760A JPS6010760A JP11940383A JP11940383A JPS6010760A JP S6010760 A JPS6010760 A JP S6010760A JP 11940383 A JP11940383 A JP 11940383A JP 11940383 A JP11940383 A JP 11940383A JP S6010760 A JPS6010760 A JP S6010760A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- diode
- glass
- section
- diameter part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はＤＨＤ （ｄｏｕｂｌｅ ｈｅａｔ ５ｉｎｋ
ｄｉｏｄｅ）型封止ダイオード電極に関する。特に、
リード線を一定長に切断後、小径部と大径部を有する電
極を釘打ち加工または成形加工によって組合せて得られ
るリート９レスダイオード８電極において１．Ｊ＼径部
と大径部との釘打ち加工または成形加工の際に該小径部
を傾斜状に加工成形しガラス封止後のガラスラックを防
止したダイオード電極部品に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a DHD (double heat 5 ink
diode) type sealed diode electrode. especially,
In a LEET 9less diode 8 electrode obtained by cutting a lead wire to a certain length and then combining electrodes having a small diameter part and a large diameter part by nailing or molding, 1. This relates to a diode electrode component in which the small diameter part is formed into an inclined shape during nailing or shaping of the diameter part and the large diameter part to prevent glass racking after glass sealing.
従来市販されているダイオード電極の殆んどは、第１図
に示すように両端部にリード線１を具備した電極２間に
半導体素子６を装着し、電極２の周囲を封止ガラス４に
て封止したＤＨＤ型ガ型ガラス封止ダイオード極電極る
。この種の電極を有する該ダイオードをプリント基板等
に装着する際には、プリント基板の装着孔に細長いリー
ト９線１を挿入して用いる。Most of the conventional diode electrodes on the market have a semiconductor element 6 mounted between electrodes 2 having lead wires 1 at both ends as shown in FIG. 1, and a sealing glass 4 surrounding the electrodes 2. DHD type G-type glass-sealed diode electrode. When mounting the diode having this type of electrode on a printed circuit board or the like, a long and narrow lead 9 wire 1 is inserted into a mounting hole of the printed circuit board.
また、プリント基板への該ダイオードの装着を容易にし
た第２図に示すようなり一ド線を有しないＤＨＤ型ガラ
ス封止り一ト８レスダイオードも考案され、その需要が
次第に急増しつつある。このようなリートゝレスダイオ
ード９の電極２には第３図に示すようなジュメット線が
使用される。第３図はジュメット線の拡大断面図を示す
。ジュメット線は心線５（例えば、Ｆｅ −Ｎｉ線）に
銅層６を被覆しこの表面に亜酸化銅（Ｃｕ ２０ ）層
７を施こして成る。In addition, a DHD type glass-sealed one-to-eight-less diode, which does not have a single lead wire, as shown in FIG. 2, which facilitates mounting of the diode on a printed circuit board, has been devised, and the demand for it is rapidly increasing. A Dumet wire as shown in FIG. 3 is used for the electrode 2 of such a leadless diode 9. FIG. 3 shows an enlarged sectional view of the Dumet wire. The Dumet wire is made by coating a core wire 5 (for example, a Fe--Ni wire) with a copper layer 6, and applying a cuprous oxide (Cu20) layer 7 on the surface of the copper layer 6.
すなわち、リードレスダイオードゝの電極２には該ジュ
メット線を一定長に切断し、釘打ち加工を施こして第４
図に示すような小径部８と大径部９とからなる電極２を
使゛用している。That is, the Dumet wire is cut to a certain length and nailed to the electrode 2 of the leadless diode.
An electrode 2 consisting of a small diameter part 8 and a large diameter part 9 as shown in the figure is used.
この電極２間の中央部に第２図に示すようにシリコン等
の半導体素子３を装着し、電極２の周囲を封止ガラス４
で封止することによって該ダイオードを得ている。As shown in FIG. 2, a semiconductor element 3 such as silicon is mounted in the center between the electrodes 2, and a sealing glass 4 is placed around the electrodes 2.
The diode is obtained by sealing with.
しかしながら、この方式のガラス封止では、大径部９の
内側面と封止ガラス４の端面が第２図にＡで示すように
直接接着し、釘打ち時の変形の際に銅被覆層６と心線５
の割合が小径部８の割合より小さくなったりするため、
ガラスとの膨張係数に差が発生したり、心線５のＦｅ−
Ｎｉ合金が強加工により膨張係数が小さくなったりする
ため、ガラス封止後特に半田付時にガラスクラックが発
生することが多く、これがリーク不良の原因となり、ダ
イオードの信頼性を大きく低下させる欠点がある。However, in this type of glass sealing, the inner surface of the large diameter portion 9 and the end surface of the sealing glass 4 are directly bonded as shown by A in FIG. and core wire 5
Since the ratio of the small diameter portion 8 may be smaller than the ratio of the small diameter portion 8,
There may be a difference in the expansion coefficient with the glass, or the Fe-
As the expansion coefficient of the Ni alloy decreases due to severe processing, glass cracks often occur after glass sealing, especially during soldering, which causes leakage defects and has the disadvantage of greatly reducing diode reliability. .
本発明はこの点を改良するもので、封止ガラス端面が全
面変形加工を受けた大径部に直接接触することを防止し
、膨張係数の差により発生するガラスクラックを防止す
ることができるダイオードゝ電極部品を提供することを
目的とする。The present invention improves this point by providing a diode that prevents the end face of the sealing glass from coming into direct contact with the large-diameter portion that has been fully deformed, and prevents glass cracks that occur due to differences in expansion coefficients.ゝThe purpose is to provide electrode parts.
本発明は、大径部と小径部とを有するリート８レスダイ
オードゝ電極において該小径部を傾斜部を形成したこと
を特徴とする。The present invention is characterized in that in an electrode of an eight-lead diode having a large diameter part and a small diameter part, the small diameter part is formed with an inclined part.
本発明の一実施例を図面に基づいて説明する。An embodiment of the present invention will be described based on the drawings.
第５図は本発明一実施例電極の拡大斜視図を示す。FIG. 5 shows an enlarged perspective view of an electrode according to an embodiment of the present invention.
第６図は第５図の電極を用いてダイオードを組立たとき
の要部断面図を示す。第６図は本発明の要部を明確にす
るため要部が誇張して描かれている。FIG. 6 shows a cross-sectional view of essential parts when a diode is assembled using the electrodes shown in FIG. 5. In FIG. 6, the main parts of the present invention are exaggerated to make them clear.
すなわち、釘打ち用ジュメット線として０．５〜１．５
ｍｍφの素線な２〜３罷長さに切断したのち、釘打ち加
工において小径部８の周囲に本発明の特徴とする傾斜部
１１を形成し第５図に示す電極１３を得る。この電極１
３に封止ガラス４を挿入 ］し、次に半導体素子６およ
び他方の電極１３′を上部より乗せ圧力を加えながら温
度が約６４０℃のバッチ炉あるいは連続炉を通してダイ
オ−１−９を形成する。That is, 0.5 to 1.5 as a dumet wire for nailing.
After cutting the wire into 2 to 3 wire lengths of mmφ, a sloped portion 11, which is a feature of the present invention, is formed around the small diameter portion 8 by nailing to obtain an electrode 13 shown in FIG. This electrode 1
The sealing glass 4 is inserted into 3], and then the semiconductor element 6 and the other electrode 13' are placed from above and the diode 1-9 is formed through a batch furnace or continuous furnace at a temperature of about 640° C. while applying pressure. .
ここで、傾斜部１１の始端径ｄ２．終端径ｄ１および封
止ガラス４の内径Ｄ（第７図に示す。）の間は ｄｌく
Ｄ＜ｄ２の関係を有するように形成される為、本電極１
３を用いれば大径部９の内側面と封止ガラス４の端面が
直接接触することはなくガラスクラックの発生が防止さ
れる。特に、傾斜部１１の始端径ｄ２ と終端径ｄ□
との関係はｄ １ ＜ 、Ｏｄ ２とすると加工時の変
形が大きくなり表面の亜酸化銅層７が脱落することがあ
りダイオードの信頼性が低下する。また、本発明による
電極１６を用いてダイオード８を組立てた場合には従来
の電極を用いて、ダイオードゝを組立てた場合に０．１
〜１０％の割合で発生していたガラスクラックがまった
く認められない。Here, the starting end diameter d2 of the inclined portion 11. This electrode 1
3, the inner surface of the large diameter portion 9 and the end surface of the sealing glass 4 will not come into direct contact with each other, thereby preventing the occurrence of glass cracks. In particular, the starting end diameter d2 and the ending end diameter d□ of the inclined portion 11
If the relationship between d1 and Od2 is satisfied, deformation during processing becomes large, and the cuprous oxide layer 7 on the surface may fall off, reducing the reliability of the diode. Furthermore, when the diode 8 is assembled using the electrode 16 according to the present invention, when the diode 8 is assembled using the conventional electrode, the difference is 0.1%.
Glass cracks, which occurred at a rate of ~10%, were not observed at all.
以上説明したように本発明によれば、電極の小径部周囲
に傾斜部を形成することとしたので、ガラスクラックの
発生を防止することができる。また、プリント基板等へ
の装着も従来電極と同様に容易に行うことができる等の
効果を有する。As explained above, according to the present invention, since the inclined portion is formed around the small diameter portion of the electrode, it is possible to prevent the occurrence of glass cracks. Further, it has the advantage that it can be easily attached to a printed circuit board or the like in the same way as conventional electrodes.
第１図は従来のリード線付きＤＨＤ型ダイオード９の断
面図。
第２図は従来のり一トゝレスＤＨＤ型ダイオード８の断
面図。
第３図はジュメット線の拡大断面図。
第４図は第２図に示したダイオード９の電極の拡大斜視
図。
第５図は本発明一実施例電極の拡大斜視図。
第６図は第５図の電極を用いたダイオードの断面図。
第７図は封止ガラスの断面図。
２・・・電極、６・・・半導体素子、４・・・封止ガラ
ス、８・・・小径部、９・・・大径部、１１・・・傾斜
部。
（外４名）
第１図
第３図
第５図
１．５
第２図
第４図
第６図
第７図FIG. 1 is a sectional view of a conventional DHD type diode 9 with lead wires. FIG. 2 is a cross-sectional view of a conventional glueless DHD diode 8. Figure 3 is an enlarged sectional view of the Dumet wire. FIG. 4 is an enlarged perspective view of the electrode of the diode 9 shown in FIG. 2. FIG. 5 is an enlarged perspective view of an electrode according to an embodiment of the present invention. FIG. 6 is a cross-sectional view of a diode using the electrode of FIG. 5. FIG. 7 is a cross-sectional view of the sealing glass. 2... Electrode, 6... Semiconductor element, 4... Sealing glass, 8... Small diameter part, 9... Large diameter part, 11... Inclined part. (Internal 4 people) Figure 1 Figure 3 Figure 5 Figure 1.5 Figure 2 Figure 4 Figure 6 Figure 7
Claims (2)
成形加工によって組合せて得られるリート８レスダイオ
ード電極において、 上記小径部の周囲に傾斜部が形成されたことを特徴とす
るダイオード電極部品。(1) A REET 8-less diode electrode obtained by combining electrodes having a small diameter part and a large diameter part by nailing or molding, characterized in that an inclined part is formed around the small diameter part. parts.
１ｉｌ）ｄ２ である特許請求の範囲第（１）項に記載のダイオード電
極部品。(2) The starting end diameter d2 and the ending end diameter d1 of the above-mentioned inclined part are d□〉
1il)d2. The diode electrode component according to claim (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11940383A JPS6010760A (en) | 1983-06-30 | 1983-06-30 | Electrode part for diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11940383A JPS6010760A (en) | 1983-06-30 | 1983-06-30 | Electrode part for diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6010760A true JPS6010760A (en) | 1985-01-19 |
| JPS6347341B2 JPS6347341B2 (en) | 1988-09-21 |
Family
ID=14760618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11940383A Granted JPS6010760A (en) | 1983-06-30 | 1983-06-30 | Electrode part for diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6010760A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56120150A (en) * | 1980-02-26 | 1981-09-21 | Sony Corp | Semiconductor element |
-
1983
- 1983-06-30 JP JP11940383A patent/JPS6010760A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56120150A (en) * | 1980-02-26 | 1981-09-21 | Sony Corp | Semiconductor element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6347341B2 (en) | 1988-09-21 |
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