JPS6010761A - Electrode part for diode - Google Patents

Electrode part for diode

Info

Publication number
JPS6010761A
JPS6010761A JP11940483A JP11940483A JPS6010761A JP S6010761 A JPS6010761 A JP S6010761A JP 11940483 A JP11940483 A JP 11940483A JP 11940483 A JP11940483 A JP 11940483A JP S6010761 A JPS6010761 A JP S6010761A
Authority
JP
Japan
Prior art keywords
section
diode
electrode
diameter part
diametral section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11940483A
Other languages
Japanese (ja)
Other versions
JPS6318334B2 (en
Inventor
Kazunao Kudo
和直 工藤
Hiromi Koyama
弘美 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP11940483A priority Critical patent/JPS6010761A/en
Publication of JPS6010761A publication Critical patent/JPS6010761A/en
Publication of JPS6318334B2 publication Critical patent/JPS6318334B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To prevent the generation of glass cracks while reducing the generation of eccentricity between a large diametral section and a small diametral section by forming a projecting section, which is not in contact with the small diametral section, to the internal surface of the large diametral section in a leadless diode electrode with the large diametral section and the small diametral section. CONSTITUTION:A strand as a dumet wire 14 for driving a nail is cut in proper length, and inserted into a mold 12, one parts 15 thereof are ground and worked for forming an annular projecting section, and the nail is driven by a punch 16 to form a diode electrode with the annular projecting section 17. The jumet wire 14 is not inclined by one parts 15 of the mold 12 on such nailing working, and the centers of a large diametral section 9 and a small diametral section 8 are not displaced. A direct contact between the large diametral section 9 and sealing glass is prevented by the annular projecting section 17 even on the assembly of a diode. It is preferable that the width (d) of the annular projecting section 17 is smaller than the length (D) of the large diametral section 9 and d<D/2 is formed. When d>D/2, the side surface of the annular projecting section 17 has an effect on the title electrode part, and glass cracks are often generated.

Description

【発明の詳細な説明】 本発明はＤＨＤ（ｄｏｕｂｌｅ　ｈｅａｔ　５ｉｎｋ　
ｄｉｏｄｅ）型封止ダイオード電極に関する。特に、リ
ート８線を一定長に切断後、小径部と大径部を有する電
極を釘打ち加工または成形加工によって組合せ−〔得ら
れるリードレスダイオード電極において、／Ｊ％径部と
大径部との釘打ち加工または成形加工の際に該大径部の
内側面に環状または点状に凸部を形成し、ガラス封止後
のガラスクラックを防止し、さらに偏心度（該小径部と
該大径部の中心位置の偏心）を改善したダイオード９電
極部品に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a DHD (double heat 5 ink
diode) type sealed diode electrode. In particular, after cutting 8-lead wire to a certain length, electrodes having a small diameter part and a large diameter part are combined by nailing or molding. During the nailing or molding process, an annular or point-shaped convex portion is formed on the inner surface of the large diameter portion to prevent glass cracking after glass sealing, and to further reduce the eccentricity (the small diameter portion and the large diameter portion). This invention relates to a diode nine-electrode component with improved eccentricity of the center position of the diameter part.

従来市販されているダイオード電極の殆んどは、第１図
に示すように両端部にリード線１を具備した電極２間に
半導体素子６を装着し、電極２の周囲を封止ガラス４に
て封止したＤＨＤ型ガラス封止ダイオード電極である。Most of the conventional diode electrodes on the market have a semiconductor element 6 mounted between electrodes 2 having lead wires 1 at both ends as shown in FIG. 1, and a sealing glass 4 surrounding the electrodes 2. This is a DHD type glass-sealed diode electrode.

この種の電極を有する該ダイオードをプリント基板等に
装着する際には、プリント基板の装着孔に細長いリード
線１を挿入して用いる。When mounting the diode having this type of electrode on a printed circuit board or the like, a long and thin lead wire 1 is inserted into a mounting hole of the printed circuit board.

また、プリント基板への該ダイオード９の装着を容易に
した第２図に示すようなり一トゝ線を有しないＤＨＤ型
ガラス封止リードレスダイオード８も考案され、その需
要が次第に急増しつつある。このようなり一ドゝレスダ
イオードゝの電極２には第３図に示すようなジュメット
線が使用される。第３図はジュメット線の拡大断面図を
示す。ジュメット線は心線５（例えば、Ｆｅ−Ｎｉ線）
に銅層６を被覆しこの表面に亜酸化鋼（Ｇｕ　２０　）
層７を施こして成る。In addition, a DHD type glass-sealed leadless diode 8 without a single toe line as shown in FIG. 2, which facilitates the mounting of the diode 9 on a printed circuit board, has been devised, and the demand for it is rapidly increasing. . Thus, a Dumet wire as shown in FIG. 3 is used for the electrode 2 of the one-dress diode. FIG. 3 shows an enlarged sectional view of the Dumet wire. Dumet wire has core wire 5 (for example, Fe-Ni wire)
is coated with a copper layer 6, and suboxide steel (Gu 20 ) is coated on this surface.
It is formed by applying layer 7.

すなわち、リートゝレスダイオード８の電極２には該ジ
ュメット線を一定長に切断し、釘打ち加工を施こして第
４図に示すような小径部８と大径部９とからなる電極２
を使用している。That is, the electrode 2 of the leadless diode 8 is made by cutting the Dumet wire into a certain length and nailing it to form the electrode 2 consisting of a small diameter part 8 and a large diameter part 9 as shown in FIG.
are using.

この電極２間の中央部に第２図に示すようにシリコン等
の半導体素子３を装着し、電極２の周囲を封止ガラス４
で封止することによって該ダイオードゝを得ている。As shown in FIG. 2, a semiconductor element 3 such as silicon is mounted in the center between the electrodes 2, and a sealing glass 4 is placed around the electrodes 2.
The diode is obtained by sealing with .

しかしながら、この方式のガラス封止では、大径部９の
内側面と封止ガラス４の端面が第２図にＡで示すように
直接接着し、釘打ち時の変形の際に銅被覆層６と心線５
の割合が小径部８の割合より小さくなったりするため、
ガラスとの膨張係数に差が発生したり、心線５のＦｅ−
Ｎｉ合金が強加工により膨張係数が小さくなったりする
ため、ガラス封止後特に半田付時にガラスクラックが発
生することが多く、これがリーク不良の原因となり、ダ
イオード８の信頼性を著しく低下させる欠点かある。However, in this type of glass sealing, the inner surface of the large diameter portion 9 and the end surface of the sealing glass 4 are directly bonded as shown by A in FIG. and core wire 5
Since the ratio of the small diameter portion 8 may be smaller than the ratio of the small diameter portion 8,
There may be a difference in the expansion coefficient with the glass, or the Fe-
Because the Ni alloy has a small expansion coefficient due to severe processing, glass cracks often occur after glass sealing, especially during soldering.This is a drawback that causes leakage defects and significantly reduces the reliability of diode 8. be.

これを改良したものとして、第５図に示すダイオード電
極極が知られている。すなわち、大径部９と小径部８と
の他に中径部１０が形成され、この中径部１０により封
止ガラス４の端面が変形加工をうけた大径部９に直接接
触するのを防止し、封止ガラス４と大径部９との膨張係
数の差により発生するガラスクラックを防止したもので
ある。As an improved version of this, a diode electrode shown in FIG. 5 is known. That is, in addition to the large diameter part 9 and the small diameter part 8, a medium diameter part 10 is formed, and this medium diameter part 10 prevents the end surface of the sealing glass 4 from coming into direct contact with the large diameter part 9 which has been deformed. This prevents glass cracks caused by the difference in expansion coefficients between the sealing glass 4 and the large diameter portion 9.

しかし、中径部１０を形成するには第６図に示すよう金
型１２の一部１３を研削加工する必要があり、釘打ち加
工時、特に高速加工すると切断加工されたジュメット線
１４が１６部分で傾くことがある。このため、釘打ち後
に第７図に示すように大径部９と小径部８の中心がずれ
（第７図中ｌで示す）、ダイオード組立時に封止ガラス
４が挿入出来なかったり、ダイオードが曲がって形成さ
　］れる不都合がある。However, in order to form the medium diameter portion 10, it is necessary to grind a part 13 of the mold 12 as shown in FIG. It may tilt in some parts. For this reason, after nailing, as shown in Figure 7, the centers of the large diameter part 9 and the small diameter part 8 are misaligned (indicated by l in Figure 7), and the sealing glass 4 cannot be inserted when assembling the diode, and the diode It has the disadvantage of being bent.

本発明はこれらの点を改良するもので、ガラスクラック
を防止することができ、しかも大径部と小径部との偏心
度を著しく減少することができるダイオード９電極部品
を提供することを目的とする。The present invention improves these points, and aims to provide a diode 9-electrode component that can prevent glass cracks and can significantly reduce the eccentricity between the large diameter part and the small diameter part. do.

本発明の一実施例を図面に基づいて説明する。An embodiment of the present invention will be described based on the drawings.

第８図および第９図は本発明第一実施例の説明図であり
、第８図は金型の要部断面図を示し、第９図は電極の斜
視図を示す。8 and 9 are explanatory diagrams of the first embodiment of the present invention, with FIG. 8 showing a sectional view of the main part of the mold, and FIG. 9 showing a perspective view of the electrode.

釘打ち用ジュメット線１４として０．５〜１．５ｍｍφ
の素線を２〜３闘長さに切断したのち、環状凸部形成用
に一部１５を研削加工した金型１２に挿入してパンチ１
６で釘打ちを行うと第９図に示すような本発明の特徴と
する環状凸部１７を有するダイオード電極が形成される
。0.5 to 1.5 mmφ as Dumet wire 14 for nailing
After cutting the wire into 2 to 3 lengths, it is inserted into a mold 12 in which part 15 has been ground to form an annular convex portion, and punch 1 is inserted into the mold 12.
When nailing is performed in step 6, a diode electrode having an annular convex portion 17, which is a feature of the present invention, as shown in FIG. 9 is formed.

ここで、本発明によれば釘打ち加工時にジュメット線１
４が金型１２の一部１５で傾くことがなく大径部９と小
径部８との中心がずれることがない。また、ダイオード
組立時にも環状凸部１７により大径部９と封止ガラス４
とが直接接触するのが防止されガラスクラックが防止さ
れる。さらに、環状凸部１７の幅ｄは大径部９の長さＤ
より小さｄ＞グとすると環状凸部１７の側面の影響が出
てガラスクラックを発生する場合があり好ましくない。Here, according to the present invention, the Dumet wire 1 is
4 is not tilted by the part 15 of the mold 12, and the centers of the large diameter part 9 and the small diameter part 8 are not shifted. Also, when assembling the diode, the annular convex portion 17 connects the large diameter portion 9 and the sealing glass 4.
This prevents direct contact with the glass and prevents glass cracks. Furthermore, the width d of the annular convex portion 17 is the length D of the large diameter portion 9.
If d>g is smaller, the influence of the side surface of the annular convex portion 17 may occur, which may cause glass cracks, which is not preferable.

また、ｄ＝丁　とした時の大径部９と小径部８との偏心
ｌは偏心ｌが０．２朋以上となる率が従来電極が０．５
〜１．０％であるのに対して本発明電極では０，２％以
下である。Furthermore, when d=T, the eccentricity l between the large diameter part 9 and the small diameter part 8 is 0.2 or more, whereas the conventional electrode has a rate of 0.5.
1.0%, whereas in the electrode of the present invention it is 0.2% or less.

第１０図は本願発明の第二実施例を示す斜視図であり、
第一実施例と比較すると凸部１８を点状（３点以上）に
形成したところに特徴がある。FIG. 10 is a perspective view showing a second embodiment of the present invention,
Compared to the first embodiment, the second embodiment is characterized in that the convex portions 18 are formed in the form of points (three or more points).

以上説明したように本発明によれば、大径部と小径部と
を有するリードレスダイオード電極において、大径部の
内側面に小径部と接しない凸部を形成することとした。As explained above, according to the present invention, in a leadless diode electrode having a large diameter part and a small diameter part, a convex part that does not touch the small diameter part is formed on the inner surface of the large diameter part.

したがって、大径部と封止ガラスとの直接接触すること
が防止できガラスクラックを防止することができ、しか
も大径部と小径部との偏心を著しく減少することができ
る。このため、ダイオードの信頼性を著しく向上するこ
とができる等の優れた効果を有する。Therefore, direct contact between the large diameter part and the sealing glass can be prevented, glass cracks can be prevented, and eccentricity between the large diameter part and the small diameter part can be significantly reduced. Therefore, it has excellent effects such as being able to significantly improve the reliability of the diode.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来のリード線付きＤＨＤ型ダイオードの断面
図。 第２図は従来のり一ト８レスＤＨＤ型ダイオードゝの断
面図。 第３図はジュメット線の拡大断面図。 第４図は第２図に示したダイオードの電極の拡大斜視図
。 第５図は従来の改良型の電極の拡大斜視図。 第６図は第５図の電極を得るための金型の要部断面図。 第７図は偏心状態を示す断面図。 第８図は本発明第一実施例の金型の要部断面図。 第９図は本発明第一実施例の斜視図。 第１０図は本発明第二実施例の斜視図。 ２・・・電極、３・・・半導体素子、４・・・封止ガラ
ス、８・・・小径部、９・・・大径部、　１７・・・環
状凸部、１８・・・点状の凸部。 第１図　第２図 第°区ｌ　第４図 第５図　第６図 第７図　第８図 手続補正書　′ １、事件の表示 昭和５８年特許願第１１９４０４　号 ２、発明の名称 ダイオード電極部品 ６、補正をする者 事件との関係　特許出願人 住所 名称（２１３）住友電気工業株式会社 ４、代理人 ５、補正の対象 明細書の〔特許請求の範囲〕の欄 図面の第７図　２１．−ζ：〕、 （別紙） （１）明細書の特許請求の範囲を以下の通り補正する。 「（１）小径部と大径部を有する電極を釘打ち加工また
は成形加工によって組合わせて得られるリート９レスダ
イオード電極において、 上記大径部内側面の上記小径部と接しない位置に凸部が
形成された ことを特徴とするダイオード電極部品。 （２）上記凸部の幅（ｄ、）と上記大径部の長さくＤ）
とがｄく− である特許請求の範囲第（１）項に記載のダイオード電
極部品。」 Ｃｌ２）図面（第７図）を添付する図面の通り補正する
。なお、補正個所は中心線を図面から削除した点。 以　上 第７図FIG. 1 is a cross-sectional view of a conventional DHD type diode with lead wires. FIG. 2 is a cross-sectional view of a conventional Norito8less DHD type diode. Figure 3 is an enlarged sectional view of the Dumet wire. FIG. 4 is an enlarged perspective view of the electrode of the diode shown in FIG. 2. FIG. 5 is an enlarged perspective view of a conventional improved electrode. FIG. 6 is a sectional view of a main part of a mold for obtaining the electrode shown in FIG. 5. FIG. 7 is a sectional view showing an eccentric state. FIG. 8 is a sectional view of the main parts of the mold according to the first embodiment of the present invention. FIG. 9 is a perspective view of the first embodiment of the present invention. FIG. 10 is a perspective view of a second embodiment of the present invention. 2... Electrode, 3... Semiconductor element, 4... Sealing glass, 8... Small diameter part, 9... Large diameter part, 17... Annular convex part, 18... Point shape convex part. Fig. 1 Fig. 2 Fig. ° Section l Fig. 4 Fig. 5 Fig. 6 Fig. 7 Fig. 8 Procedural amendment ' 1. Indication of the case 1982 Patent Application No. 119404 2. Name of the invention Diode electrode parts 6. Relationship with the case of the person making the amendment Patent applicant address name (213) Sumitomo Electric Industries, Ltd. 4. Agent 5. Figure 7 of the drawings in the [Claims] section of the specification to be amended 21. -ζ:], (Attachment) (1) The scope of claims in the specification is amended as follows. (1) In a REET 9-less diode electrode obtained by combining an electrode having a small diameter portion and a large diameter portion by nailing or molding, a convex portion is located on the inner surface of the large diameter portion at a position not in contact with the small diameter portion. A diode electrode component characterized in that: (2) the width (d) of the convex portion and the length D) of the large diameter portion;
The diode electrode component according to claim (1), wherein d -. "Cl2) The drawing (Figure 7) is amended as shown in the attached drawing. The correction was made by deleting the center line from the drawing. Above Figure 7

Claims (2)

【特許請求の範囲】[Claims] （１）小径部と大径部を有する電極を釘打ち加工または
成形加工によって組合わせて得られるリート８レスダイ
オード電もｉにおいて、上記大径部内側面の上記小径部
と接しない位置に凸部が形成された ことを特徴とするダイオード電極部品。(1) A REET 8less diode obtained by combining electrodes having a small diameter part and a large diameter part by nailing or molding also has a convex part on the inner surface of the large diameter part at a position not in contact with the small diameter part. A diode electrode component characterized in that: is formed. （２）上記凸部の幅（均と上記大径部の長さくＤ）とが
　ｄ＞７ である特許請求の範囲第（１）項に記載のダイオード電
極部品。(2) The diode electrode component according to claim (1), wherein the width of the convex portion (average and the length D of the large diameter portion) is d>7.
JP11940483A 1983-06-30 1983-06-30 Electrode part for diode Granted JPS6010761A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11940483A JPS6010761A (en) 1983-06-30 1983-06-30 Electrode part for diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11940483A JPS6010761A (en) 1983-06-30 1983-06-30 Electrode part for diode

Publications (2)

Publication Number Publication Date
JPS6010761A true JPS6010761A (en) 1985-01-19
JPS6318334B2 JPS6318334B2 (en) 1988-04-18

Family

ID=14760640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11940483A Granted JPS6010761A (en) 1983-06-30 1983-06-30 Electrode part for diode

Country Status (1)

Country Link
JP (1) JPS6010761A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61182040U (en) * 1985-04-30 1986-11-13
US4789444A (en) * 1986-02-15 1988-12-06 Solex Research Corporation Of Japan Process for electrolytically producing metals of Ni, Co, Zn, Cu, Mn, and Cr from a solution thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5883154U (en) * 1981-11-30 1983-06-06 日本電気ホームエレクトロニクス株式会社 electronic components

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5883154U (en) * 1981-11-30 1983-06-06 日本電気ホームエレクトロニクス株式会社 electronic components

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61182040U (en) * 1985-04-30 1986-11-13
US4789444A (en) * 1986-02-15 1988-12-06 Solex Research Corporation Of Japan Process for electrolytically producing metals of Ni, Co, Zn, Cu, Mn, and Cr from a solution thereof

Also Published As

Publication number Publication date
JPS6318334B2 (en) 1988-04-18

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