JP2842407B2 - Semiconductor device and package for semiconductor device - Google Patents
Semiconductor device and package for semiconductor deviceInfo
- Publication number
- JP2842407B2 JP2842407B2 JP24996196A JP24996196A JP2842407B2 JP 2842407 B2 JP2842407 B2 JP 2842407B2 JP 24996196 A JP24996196 A JP 24996196A JP 24996196 A JP24996196 A JP 24996196A JP 2842407 B2 JP2842407 B2 JP 2842407B2
- Authority
- JP
- Japan
- Prior art keywords
- lead
- package
- semiconductor device
- mounting
- joint
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置及び半
導体装置用パッケージに関し、特に、マイクロ波通信装
置等リード取付部の寸法が制限される場合であっても、
リードのパッケージに対する接合強度を向上させること
ができ、かつ、リードの取付位置の精度を向上させるこ
とができる信頼性の高い半導体装置及び半導体装置用パ
ッケージに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a package for a semiconductor device.
The present invention relates to a highly reliable semiconductor device and a semiconductor device package capable of improving bonding strength of a lead to a package and improving accuracy of a mounting position of a lead.
【０００２】[0002]
【従来の技術】一般に、半導体装置のリード取付部にお
いては、図７及び図８に示すように、半導体チップ等の
電子部品を内部に収納するパッケージ３０に、半導体チ
ップと電気的に接続されているリード取付部３１が設け
られ、そのリード取付部３１に、リード３２の端部がろ
う材３３でろう付けして接合される。リード３２の幅
は、リード取付部３１の幅と同一又はそれよりやや狭
く、リード３２の接合面積は小さい。そのため、リード
の接合強度は低く、使用環境の悪い条件下では、リード
の脱落等の不都合が生じる。そこで、リードの接合強度
を向上させるために、従来から種々の技術が提案されて
いる。2. Description of the Related Art Generally, as shown in FIGS. 7 and 8, a lead mounting portion of a semiconductor device is electrically connected to a semiconductor chip in a package 30 for housing electronic components such as a semiconductor chip. A lead attachment portion 31 is provided, and an end of the lead 32 is joined to the lead attachment portion 31 by brazing with a brazing material 33. The width of the lead 32 is the same as or slightly smaller than the width of the lead attachment portion 31, and the bonding area of the lead 32 is small. For this reason, the bonding strength of the lead is low, and inconveniences such as falling off of the lead occur under conditions of poor use environment. Therefore, various techniques have been conventionally proposed in order to improve the bonding strength of the leads.
【０００３】例えば、図９及び図１０に示す従来例１で
は、リード４２の接合部分４２ａを幅広にし、パッケー
ジ４０のリード取付部４１はそのリード４０の形状に対
応するように幅広に形成されている。リード４２の接合
部分４２ａは、リード取付部４１にろう材４３でろう付
けして接合される。この従来例１は、図７に示す従来例
よりも接合面積を広くできるので、リードの接合強度を
向上させることができる。For example, in the conventional example 1 shown in FIGS. 9 and 10, the connecting portion 42a of the lead 42 is made wide, and the lead attaching portion 41 of the package 40 is formed wide so as to correspond to the shape of the lead 40. I have. The joining portion 42a of the lead 42 is joined to the lead mounting portion 41 by brazing with a brazing material 43. In the first conventional example, the bonding area can be made larger than that of the conventional example shown in FIG. 7, so that the bonding strength of the lead can be improved.
【０００４】また、図１１及び図１２に示す従来例２で
は、リード５２の先端部５２ａを下方向に曲げ、パッケ
ージ５０のリード取付部５１に、リード５２の先端部５
２ａをろう材５３で埋め込んで接合している。この従来
例２でも、リードの接合面積を広くできるので、リード
の接合強度を向上させることができる。In the conventional example 2 shown in FIGS. 11 and 12, the distal end 52a of the lead 52 is bent downward, and the leading end 5a of the lead 52 is attached to the lead mounting portion 51 of the package 50.
2a is buried with a brazing material 53 and joined. Also in the second conventional example, the bonding area of the leads can be increased, so that the bonding strength of the leads can be improved.
【０００５】さらに、特開昭６２ー１９５１５９号公報
に開示された図１３に示す従来例３では、リード６２の
先端部が主固定部６２ａと、その主固定部６２ａの基端
部から垂直方向に垂れ下がって一体に設けられた補助固
定部６２ｂとからなる。この従来例３は、主固定部６２
ａとともに補助固定部６２ｂがパッケージ６０のリード
取付部６１にろう材６３でろう付けして接合されるの
で、補助固定部６２ｂの分だけリードの接合面積を広く
することができる。Further, in the conventional example 3 shown in FIG. 13 disclosed in Japanese Patent Application Laid-Open No. Sho 62-195159, the distal end of the lead 62 has a main fixing portion 62a and a vertical direction from a base end of the main fixing portion 62a. And an auxiliary fixing portion 62b which is provided integrally therewith. In the third conventional example, the main fixing portion 62
Since the auxiliary fixing portion 62b is joined to the lead mounting portion 61 of the package 60 by brazing with the brazing material 63 together with a, the bonding area of the lead can be increased by the amount of the auxiliary fixing portion 62b.
【０００６】[0006]
【発明が解決しようとする課題】マイクロ波通信装置用
に使用される半導体装置においては、パッケージ内部の
共振及びパッケージ使用時の性能上・寸法上等の要求か
ら外径寸法が制限され、その結果、リード取付部の寸法
が１〜２ｍｍ程度に制限される。In a semiconductor device used for a microwave communication device, the outer diameter is limited due to resonance in the package and requirements for performance and dimensions when the package is used. The size of the lead attachment portion is limited to about 1 to 2 mm.
【０００７】この限られた寸法の範囲内で、パッケージ
のリード取付部にリードを接合する場合、上述した従来
例においては、リードの接合面積が不十分であり、従っ
て、十分な信頼性を得るためのリードの接合強度が得ら
れない。When a lead is bonded to a lead mounting portion of a package within this limited dimension, in the above-mentioned conventional example, the bonding area of the lead is insufficient, and therefore sufficient reliability is obtained. The lead joint strength cannot be obtained.
【０００８】すなわち、従来例１では、寸法制限から幅
広にするにも限界がある。従来例２では、ろう材の表面
の形状の調整が困難であり、表面荒れ等によるメッキ不
着が発生するおそれがある。従来例３は、従来例２と同
様に、寸法制限から補助固定部の長さが制限される。That is, in the first conventional example, there is a limit in increasing the width due to dimensional restrictions. In Conventional Example 2, it is difficult to adjust the shape of the surface of the brazing material, and there is a possibility that plating failure due to surface roughness or the like may occur. In Conventional Example 3, similarly to Conventional Example 2, the length of the auxiliary fixing portion is limited due to dimensional restrictions.
【０００９】従って、いずれの従来例においても、十分
な接合面積を確保できず、十分な接合強度が得られず、
メッキ不着等の不都合が生じる。また、面同士を接合す
るので、リードの取付位置の位置決めについて高い精度
をだすのは困難である。Therefore, in any of the conventional examples, a sufficient bonding area cannot be secured, and a sufficient bonding strength cannot be obtained.
Inconveniences, such as plating failure, occur. In addition, since the surfaces are joined to each other, it is difficult to achieve high accuracy in positioning the lead mounting position.
【００１０】本発明は、上記問題点に鑑みてなされたも
のであり、マイクロ波通信装置等リード取付部の寸法が
制限される場合であっても、リードのパッケージに対す
る接合強度を向上させることができ、かつ、リードの取
付位置の精度を向上させることができる信頼性の高い半
導体装置及び半導体装置用パッケージを提供することを
目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and can improve the bonding strength of a lead to a package even when the dimensions of a lead mounting portion such as a microwave communication device are limited. It is an object of the present invention to provide a highly reliable semiconductor device and a semiconductor device package capable of improving the accuracy of lead attachment positions.
【００１１】[0011]
【課題を解決するための手段】本発明の半導体装置は、
リード取付部に凹部を備えたパッケージと、そのパッケ
ージのリード取付部の凹部に挿入して接合されるリード
とを有することを特徴とするものである。According to the present invention, there is provided a semiconductor device comprising:
The package includes a package having a concave portion in a lead mounting portion, and a lead inserted into and bonded to the concave portion of the lead mounting portion of the package.
【００１２】本発明によれば、パッケージのリード取付
部の凹部にリードを挿入してろう材等で接合するので、
凹部の部分がリード取付面積として加えられ、接合面積
を広くすることができる。また、リードの取付位置は、
パッケージの凹部の位置によって決定される。According to the present invention, the lead is inserted into the concave portion of the lead mounting portion of the package and is joined with a brazing material or the like.
The concave portion is added as a lead mounting area, and the bonding area can be increased. Also, the mounting position of the lead is
It is determined by the position of the concave portion of the package.
【００１３】リードは、平坦に形成されたリード本体
と、そのリード本体の端部から垂直方向に折り曲げて形
成され、パッケージのリード取付部の凹部に挿入して接
合される接合部とを有してもよい。The lead has a lead body formed flat, and a joint formed by bending the lead body in a vertical direction from an end of the lead body and being inserted into a recess of a lead attachment portion of a package and joined. You may.
【００１４】リードは、略Ｔ字状に形成され、その幅広
部分の両端部を垂直方向に折曲げて接合部が形成され、
パッケージのリード取付部の凹部は、リードの接合部に
対応する位置に形成される。The lead is formed in a substantially T-shape, and both ends of the wide portion are bent in the vertical direction to form a joint.
The concave portion of the lead attachment portion of the package is formed at a position corresponding to the joint of the lead.
【００１５】リードとパッケージ内に収納される電子部
品とが、パッケージのリード取付部の凹部を介して電気
的に接続されてもよい。[0015] The leads and the electronic components housed in the package may be electrically connected to each other via a concave portion of the lead mounting portion of the package.
【００１６】本発明は又、上記特徴を有する半導体装置
用パッケージである。The present invention is also a package for a semiconductor device having the above characteristics.
【００１７】[0017]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照しながら説明する。本発明の半導体装置は、半導
体チップ等の電子部品を搭載するパッケージ１と、その
パッケージ１に接合されるリード２とを有する。Embodiments of the present invention will be described below with reference to the drawings. The semiconductor device of the present invention has a package 1 on which electronic components such as a semiconductor chip are mounted, and leads 2 joined to the package 1.
【００１８】図１に示すように、パッケージ１は、銅等
の金属からなる放熱板３と、放熱板３上に設けられ半導
体チップ等の電子部品を搭載する搭載部４と、その搭載
部４の周囲に設けられセラミック等の絶縁体からなる側
壁部５と、その側壁部５の上面を封止するキャップ６と
を有する。図２に示すように、側壁部５の所定位置には
パッケージ１内部の半導体チップと電気的に接続されて
いるリード取付部７が設けられている。リード取付部７
には、所定間隔を隔てて凹部８が２箇所形成されてい
る。図３に示すように、リード取付部７の凹部８の底面
と内壁面及び凹部８間の表面は、メタライズ層９で被覆
されている。As shown in FIG. 1, the package 1 includes a heat radiating plate 3 made of metal such as copper, a mounting portion 4 provided on the heat radiating plate 3 for mounting an electronic component such as a semiconductor chip, and the mounting portion 4. And a cap 6 that seals the upper surface of the side wall 5 and is made of an insulator such as a ceramic. As shown in FIG. 2, a lead attachment portion 7 that is electrically connected to a semiconductor chip inside the package 1 is provided at a predetermined position on the side wall portion 5. Lead mounting part 7
, Two concave portions 8 are formed at predetermined intervals. As shown in FIG. 3, the bottom surface and the inner wall surface of the concave portion 8 of the lead mounting portion 7 and the surface between the concave portion 8 are covered with a metallized layer 9.
【００１９】リード２は、平坦に形成されたリード本体
２ａと、そのリード本体２ａの一方の端部から垂直方向
に折り曲げて形成され、パッケージ１のリード取付部７
の凹部８に挿入して接合される接合部２ｂとからなる。
リード２の接合部２ｂは、例えば、図４に示すような略
Ｔ字状に形成されたものを、その幅広部分の両端部を垂
直方向に折曲げて断面略コ字状に成形される。パッケー
ジ１のリード取付部７の凹部８は、リード２の接合部２
ｂに対応する位置に形成される。The lead 2 is formed by forming a flat lead body 2a and bending vertically from one end of the lead body 2a.
And a joining portion 2b that is inserted into and joined to the concave portion 8 of the first embodiment.
The joining portion 2b of the lead 2 is formed, for example, in a substantially T-shape as shown in FIG. 4 and by bending both ends of the wide portion in the vertical direction to have a substantially U-shaped cross section. The concave portion 8 of the lead mounting portion 7 of the package 1 is
It is formed at a position corresponding to b.
【００２０】半導体装置のパッケージ１にリード２を接
合する場合には、図２及び図３に示すように、リード２
の接合部２ｂをパッケージ１の凹部８に挿入し、ろう材
１０によりろう付けして接合される。本実施の形態にお
いては、図３に示すように、断面略コ字状に折曲された
接合部２ｂの平坦部の内面がろう材１０でろう付けさ
れ、かつ、接合部２ｂの両端部は、それぞれ凹部８の内
部でろう材１０に埋め込まれる。従って、マイクロ波通
信装置等のようにリード取付部７の寸法が１〜２ｍｍと
いう限られた寸法の範囲内であっても、凹部８の部分が
リード取付面積として加えられ十分な接合面積を得るこ
とができる。その結果、リード２のパッケージ１に対す
る接合強度を向上させ、信頼性を向上させることができ
るまた、リード２の取付位置は、パッケージ１の凹部８
の位置によって決定されるので、リード２の取付位置の
精度をより向上させることができる。When the leads 2 are bonded to the package 1 of the semiconductor device, as shown in FIGS.
Is inserted into the concave portion 8 of the package 1 and brazed by the brazing material 10 to be joined. In the present embodiment, as shown in FIG. 3, the inner surface of the flat portion of the joining portion 2b bent in a substantially U-shaped cross section is brazed with the brazing material 10, and both ends of the joining portion 2b are Are respectively embedded in the brazing material 10 inside the concave portions 8. Therefore, even when the size of the lead mounting portion 7 is within a limited range of 1 to 2 mm as in a microwave communication device or the like, the portion of the concave portion 8 is added as a lead mounting area to obtain a sufficient bonding area. be able to. As a result, the bonding strength of the lead 2 to the package 1 can be improved, and the reliability can be improved.
Therefore, the accuracy of the mounting position of the lead 2 can be further improved.
【００２１】リード２の幅広部が１．５ｍｍ程度、それ
以外の部分は、０．５ｍｍとし、幅広部の両端０．４ｍ
ｍ程度をそれぞれ曲げて形成されたリード２の場合、約
１．１ｍｍのリード取付部７の幅の中で接合部２ｂがな
い場合と比較して、面積比で４倍以上の接合面積を得る
ことができる。The wide part of the lead 2 is about 1.5 mm, and the other part is 0.5 mm.
In the case of the lead 2 formed by bending each about m, a bonding area of four times or more in area ratio is obtained as compared with the case where there is no bonding part 2b in the width of the lead mounting part 7 of about 1.1 mm. be able to.
【００２２】次に、パッケージ１の凹部８の形成方法及
び内面のメタライズ方法について説明する。本実施の形
態の側壁部５は、積層セラミックにより形成されてお
り、凹部８の底面のメタライズ層９は、積層された途中
の層の凹部８の底面に当たる部分に、メタライズを付け
ることによって形成される。また、凹部８の内側面のメ
タライズ層９は、層の上層において、凹部８に対応する
スルーホールを設け、吸引等により内側面のメタライズ
層９を形成している。Next, a method for forming the concave portion 8 of the package 1 and a method for metallizing the inner surface will be described. The side wall portion 5 of the present embodiment is formed of a laminated ceramic, and the metallized layer 9 on the bottom surface of the concave portion 8 is formed by metallizing a portion of the layer which is in the middle of the lamination and hitting the bottom surface of the concave portion 8. You. In the metallized layer 9 on the inner surface of the concave portion 8, a through hole corresponding to the concave portion 8 is provided in a layer above the layer, and the metallized layer 9 on the inner surface is formed by suction or the like.
【００２３】このように、本実施の形態においては、凹
部８は比較的容易に形成できるため、安価でかつ十分な
信頼性を有するリード２の取付が可能となる。As described above, in the present embodiment, since the recess 8 can be formed relatively easily, it is possible to mount the lead 2 at low cost and with sufficient reliability.
【００２４】次に、本発明の他の形態の半導体装置を図
５及び図６を参照して説明する。図５に示すように、本
発明の他の形態の半導体装置は、セラミック等で作られ
半導体チップ等の電子部品を収納するパッケージ１１
と、そのパッケージ１１の底面に接合されるリード１２
とを有する。パッケージ１１の上面は、ろう材２０を用
いてキャップ１６により封止されている。Next, a semiconductor device according to another embodiment of the present invention will be described with reference to FIGS. As shown in FIG. 5, a semiconductor device according to another embodiment of the present invention includes a package 11 made of ceramic or the like and containing electronic components such as a semiconductor chip.
And a lead 12 bonded to the bottom surface of the package 11
And The upper surface of the package 11 is sealed with a cap 16 using a brazing material 20.
【００２５】図６は、図５に示すＣ−Ｃ線断面図であ
る。図６に示すように、パッケージ１１の底面の所定位
置には凹部１８が形成され、リード１２の接合部１２ｂ
は、その凹部１８に挿入してろう材２１で接合される。
また、リード１２側のメタライズ層１９ａは、凹部１８
の内側面のメタライズ層１９ｂを介して内部のメタライ
ズ層１９ｃに電気的に接続されており、内部のメタライ
ズ層１９ｃは、パッケージ１内部に搭載された半導体チ
ップ等の電子部品（図示せず）に電気的に接続されてい
る。従って、パッケージ１に形成された凹部８は、リー
ド２と内部のメタライズ層９とを電気的に接続するスル
ーホールの役割も果している。FIG. 6 is a sectional view taken along the line CC shown in FIG. As shown in FIG. 6, a concave portion 18 is formed at a predetermined position on the bottom surface of the package 11, and a joint 12 b of the lead 12 is formed.
Is inserted into the recess 18 and joined by the brazing material 21.
The metallized layer 19a on the lead 12 side is
Is electrically connected to an internal metallization layer 19c via a metallization layer 19b on the inner surface of the package 1, and the internal metallization layer 19c is connected to an electronic component (not shown) such as a semiconductor chip mounted inside the package 1. It is electrically connected. Therefore, the concave portion 8 formed in the package 1 also serves as a through hole for electrically connecting the lead 2 and the internal metallized layer 9.
【００２６】本実施の形態においても、限られた寸法の
範囲内において、容易にかつ十分な信頼性を有するリー
ド１２の取付が可能となる。Also in this embodiment, it is possible to easily and sufficiently attach the lead 12 within a limited size range.
【００２７】本発明は、上記実施の形態に限定されるこ
とはなく、特許請求の範囲に記載された技術的事項の範
囲内において、種々の変更が可能である。The present invention is not limited to the above embodiment, and various changes can be made within the scope of the technical matters described in the claims.
【００２８】[0028]
【発明の効果】本発明によれば、次のような優れた効果
を奏する。 （１）パッケージのリード取付部の凹部にリードを挿入
してろう材等で接合するので、マイクロ波通信装置等リ
ード取付部の寸法が制限される場合であっても、接合面
積を広くすることができる。従って、リードのパッケー
ジに対する接合強度を向上させることが可能であり、信
頼性の向上を図ることができる。 （２）リードの取付位置は、パッケージの凹部の位置に
よって決定されるので、リードの取付位置の精度をより
向上させることができる。According to the present invention, the following excellent effects can be obtained. (1) Since the lead is inserted into the recess of the lead attachment portion of the package and joined with a brazing material or the like, even if the size of the lead attachment portion such as a microwave communication device is limited, the joining area should be increased. Can be. Therefore, the bonding strength of the lead to the package can be improved, and the reliability can be improved. (2) Since the mounting position of the lead is determined by the position of the concave portion of the package, the accuracy of the mounting position of the lead can be further improved.
【図１】本発明の半導体装置を示す平面図である。FIG. 1 is a plan view showing a semiconductor device of the present invention.
【図２】図１のＡ方向から見た、パッケージとリードと
の接合状態を示す斜視図である。FIG. 2 is a perspective view showing a bonding state between a package and a lead, as viewed from a direction A in FIG. 1;
【図３】図１のＢーＢ線における断面図である。FIG. 3 is a sectional view taken along line BB in FIG.
【図４】成形前のリードを示す平面図である。FIG. 4 is a plan view showing a lead before molding.
【図５】本発明の他の形態の半導体装置を示す側面図で
ある。FIG. 5 is a side view showing a semiconductor device according to another embodiment of the present invention.
【図６】図５のＣ−Ｃ線における断面図である。FIG. 6 is a sectional view taken along line CC of FIG. 5;
【図７】従来の半導体装置におけるパッケージとリード
との接合状態を示す平面図である。FIG. 7 is a plan view showing a bonding state between a package and a lead in a conventional semiconductor device.
【図８】図７のＤ−Ｄ線における断面図である。FIG. 8 is a sectional view taken along line DD of FIG. 7;
【図９】従来例１におけるパッケージとリードとの接合
状態を示す平面図である。FIG. 9 is a plan view showing a bonding state between a package and a lead in Conventional Example 1.
【図１０】図９のＥ−Ｅ線における断面図である。FIG. 10 is a sectional view taken along line EE in FIG. 9;
【図１１】従来例２におけるパッケージとリードとの接
合状態を示す平面図である。FIG. 11 is a plan view showing a bonding state between a package and a lead in Conventional Example 2.
【図１２】図１１のＦ−Ｆ線における断面図である。FIG. 12 is a sectional view taken along line FF in FIG. 11;
【図１３】従来例３におけるパッケージとリードとの接
合状態を示す断面図である。FIG. 13 is a cross-sectional view showing a bonding state between a package and a lead in Conventional Example 3.
１：パッケージ ２：リード ２ａ：リード本体 ２ｂ：接合部 ３：放熱板 ４：搭載部 ５：側壁部 ６：キャップ ７：リード取付部 ８：凹部 ９：メタライズ層 1: Package 2: Lead 2a: Lead body 2b: Joint part 3: Heat sink 4: Mounting part 5: Side wall part 6: Cap 7: Lead mounting part 8: Concave part 9: Metallization layer
Claims (5)
り付ける半導体装置において、前記リード取付部には間
隔部を隔てて２箇所の凹部が形成され、前記リードには
幅広部分を断面略コ字状に形成された接合部を有し、前
記接合部が前記リード取付部の間隔部及び各凹部の側面
を覆うように前記間隔部及び凹部と接合する、ことを特
徴とする半導体装置。In a semiconductor device for mounting a lead on a lead mounting portion on a package surface, two recesses are formed in the lead mounting portion with a space therebetween, and a wide portion of the lead has a substantially U-shaped cross section. A semiconductor device, comprising: a joint formed on the gap; and the joint joined to the gap and the recess such that the joint covers the gap of the lead attachment and the side surface of each recess.
以外のリード幅に比べて広いことを特徴とする請求項１
に記載の半導体装置。2. A lead width of a flat portion of the joint portion is wider than a lead width of a portion other than the joint portion.
3. The semiconductor device according to claim 1.
に形成されることを特徴とする請求項１又は２に記載の
半導体装置。3. The semiconductor device according to claim 1, wherein said lead attachment portion is formed on a side wall portion of the package.
に形成されることを特徴とする請求項１又は２に記載の
半導体装置。4. The semiconductor device according to claim 1, wherein the lead mounting portion is formed on a bottom surface of the package.
特徴とする請求項１乃至４のいずれか１つの項に記載の
半導体装置。5. The semiconductor device according to claim 1, wherein the semiconductor device is used for a microwave communication device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24996196A JP2842407B2 (en) | 1996-09-20 | 1996-09-20 | Semiconductor device and package for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24996196A JP2842407B2 (en) | 1996-09-20 | 1996-09-20 | Semiconductor device and package for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1098125A JPH1098125A (en) | 1998-04-14 |
| JP2842407B2 true JP2842407B2 (en) | 1999-01-06 |
Family
ID=17200772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24996196A Expired - Fee Related JP2842407B2 (en) | 1996-09-20 | 1996-09-20 | Semiconductor device and package for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2842407B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5743561B2 (en) * | 2010-08-31 | 2015-07-01 | 京セラ株式会社 | Wiring board |
| JP2013125848A (en) * | 2011-12-14 | 2013-06-24 | Rohm Co Ltd | Power module semiconductor device and manufacturing method thereof |
| JP2013157550A (en) * | 2012-01-31 | 2013-08-15 | Rohm Co Ltd | Power module semiconductor device and method of manufacturing the same |
-
1996
- 1996-09-20 JP JP24996196A patent/JP2842407B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1098125A (en) | 1998-04-14 |
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