JPS58100967A - Manufacture of metallic parts - Google Patents

Manufacture of metallic parts

Info

Publication number
JPS58100967A
JPS58100967A JP19721681A JP19721681A JPS58100967A JP S58100967 A JPS58100967 A JP S58100967A JP 19721681 A JP19721681 A JP 19721681A JP 19721681 A JP19721681 A JP 19721681A JP S58100967 A JPS58100967 A JP S58100967A
Authority
JP
Japan
Prior art keywords
heat sink
plating
silver
holes
plated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19721681A
Other languages
Japanese (ja)
Inventor
「こも」田 孝一
Kouichi Komoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP19721681A priority Critical patent/JPS58100967A/en
Publication of JPS58100967A publication Critical patent/JPS58100967A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/20Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001Interlayers, transition pieces for metallurgical bonding of workpieces
    • B23K35/007Interlayers, transition pieces for metallurgical bonding of workpieces at least one of the workpieces being of copper or another noble metal

Abstract

PURPOSE:To form a beautiful, flawless plated surface in making finish plating after silver soldering a copper member to other member by Ni plating the copper member prior to silver soldering. CONSTITUTION:Holes 2 for fitting to a chassis, through holes 3 for sealing lead wires and through holes 4 for fitting a heat sink are pierced in a base plate 1 made by blanking a steel plate. Lead wires 6 made of Fe-Ni alloy and glass tablets 5 are attached to specified positions. Then, these are heated to 950- 1,050 deg.C in neutral or weakly reducing atmosphere and lead wires 6 are sealed in the holes 3 through glass 5. The whole surface of the heat sink 7 made of copper is Ni plated, and fitted to the hole 4, and fixed temporarily. Silver solder is placed around the heat sink 7, and heated to 800-900 deg.C to fix the heat sink to the base plate. Since the surface of the heat sink is Ni plated, poor adhesion of plating due to oil or stain does not occur. Finish plating with Au etc. is made on this surface.

Description

【発明の詳細な説明】 この発明は、半導体装iffの気密容器の一部として用
いられるステム、ベース、キャンプ等の少なくとも銅部
側を佃部材に銀ロウ付けしてなる金属部品の製造方法に
関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a metal component, in which at least the copper side of a stem, base, camp, etc. used as a part of an airtight container of a semiconductor device IF is silver-brazed to a tsukage member. .

半導体装置の気密容器には、導電性、熱伝導性等の点で
銅を用いるものが少なくない。例えばステムとして、第
1図および第2図に示す構造のも 1− のがある。図において、1trii製のステム基υ)で
略に形状を星し、長手方向の両端部にシャーシ等への取
付孔2,2を有し、中央部近傍にリード線封漸用の透孔
3,3を有し、1Ius中央部にヒートシンク舒合用の
透孔4を有する。前記透孔3,3にはそねぞれカラス5
,5を介してリード紳6,6が気密かつ絶縁して封看き
れ、一方透孔4には銅製のヒートシンク7が銀ロウによ
って気密にi、!?f着だれている工 この種の構造のステムは、従来次のようにして製造され
ていた。第3図はその工稈ブロック図を示す。ます、鉄
板を打ち抜いてステム基板lを製作するとともに、長尺
の鉄・ニンケル合金線を適当な良さに切断してリード紗
6,6を製作する。
Many airtight containers for semiconductor devices use copper because of its electrical conductivity, thermal conductivity, and the like. For example, there is a stem having the structure shown in FIGS. 1 and 2. In the figure, the stem base υ) made by 1trii is roughly shaped like a star, has mounting holes 2, 2 at both ends in the longitudinal direction for attaching to the chassis, etc., and a through hole 3 for sealing the lead wire near the center. , 3, and has a through hole 4 in the center of the heat sink for connecting the heat sink. The through holes 3, 3 each have a crow 5.
, 5, the leads 6, 6 are sealed airtightly and insulated, while a copper heat sink 7 is hermetically sealed in the through hole 4 with silver solder. ? A stem having this type of structure has conventionally been manufactured in the following manner. Figure 3 shows a block diagram of the culm. First, a stem substrate l is manufactured by punching out an iron plate, and lead gauze 6 is manufactured by cutting a long iron/Ninkel alloy wire to an appropriate length.

また、ソーダバリウムガラス、ソーダライムガラス等の
ガラス微粉末を有機バインダと共に混練し、円筒状にプ
レス成型後、酸化性雰囲気中で約500°C程度に加熱
して、有機バインダを焼失せしめてカラスタブレソ)5
a、5aを製作する。そして、上記のステム基板1.ガ
ラスタブレソ)5a、5a 2− およびリード線6,6をグラファイト製の耐層治具を用
いて所定の関係位置に組み立て、中性または弱還元性雰
囲気中において、約950〜1050℃稈度の温度で加
熱して、前記ガラスタブレット5a。
In addition, fine glass powder such as soda barium glass or soda lime glass is kneaded with an organic binder, press-molded into a cylindrical shape, and then heated to about 500°C in an oxidizing atmosphere to burn out the organic binder. )5
Manufacture a and 5a. Then, the above stem substrate 1. Glass tab reso) 5a, 5a 2- and the lead wires 6, 6 are assembled in the predetermined relative positions using a layer-resistant jig made of graphite, and heated at a temperature of about 950 to 1050°C in a neutral or weakly reducing atmosphere. to form the glass tablet 5a.

5aを溶融させて、ステム基板1の透孔3,3内にガラ
ス5,5を介してリード線6,6を気密かつ絶縁して封
着する。その後、ステム基&lの透孔4内に、銅板を代
ち抜いて製作したビートシンク7を嵌合し、かしめ加工
を施して仮固定したのち、グラファイト製の封着治具に
載置し、ヒートシンク7の周囲に銀ロウを配置して、中
性または弱還元性雰囲気中で、約800〜900°C程
度の温度で加熱して銀ロウを溶融せしめ、ヒートシンク
7をステム基板lに気密に同着する。次に、全体に電気
または無電解ニッケルメッキ等による仕上げメッキを施
す。
5a is melted to seal the lead wires 6, 6 in the through holes 3, 3 of the stem substrate 1 through the glasses 5, 5 in an airtight and insulated manner. After that, a beat sink 7 made by cutting out a copper plate was fitted into the through hole 4 of the stem base &l, and after being temporarily fixed by caulking, it was placed on a graphite sealing jig, Silver solder is placed around the heat sink 7, and heated at a temperature of about 800 to 900°C in a neutral or weakly reducing atmosphere to melt the silver solder, and the heat sink 7 is hermetically sealed to the stem substrate l. Same arrival. Next, finish plating is applied to the entire structure using electric or electroless nickel plating.

ところで、ヒートシンク7を銅板より打ち抜いたま\で
ステム基板1に銀ロウイ」けすると、ヒートシンク7の
表面に付層している汚れ、油等が焼き付いて、仕上はメ
ッキの密着が恕くなり、外&+1゜不良となる。そのた
め、仕上げメッキ前や打ち接き加工後にl+r! k等
でエンチングしたりバレルで研磨しているが、銀ロウ付
は後にエツチングすると銀ロウが溶解されてヒートシン
ク7の表面に硝酸銀の瞑が形成されて、半導体ペレット
の半IJj付は性が劣化するし、バレル研磨すると、硬
いステム基板lとの衝突によって軟いヒートシンク70
表面に傷が付きやすいのみならず、処理数が増やせない
ので能率が悪いという問題点があった。一方。
By the way, if the heat sink 7 is punched out from a copper plate and then silver-plated onto the stem board 1, the dirt, oil, etc. on the surface of the heat sink 7 will be baked in, and the plating will not adhere well to the outside. &+1° defective. Therefore, l+r! before finishing plating or after welding process. Etching is done with k, etc. or polishing is done with a barrel, but if the silver solder is etched later, the silver solder will be dissolved and a silver nitrate layer will be formed on the surface of the heat sink 7, and the semi-IJj attachment of semiconductor pellets will deteriorate the properties. However, when barrel polishing occurs, the soft heat sink 70 is damaged due to collision with the hard stem substrate l.
There were problems in that not only the surface was easily damaged, but also the efficiency was poor because the number of treatments could not be increased. on the other hand.

打ち抜き加工後のヒートシンク7のままでバレル研磨す
ると、前述のような問題点はなくなるものの、ヒートシ
ンク7同士の衝突による傷の発生は避けられなかった。
If barrel polishing is performed using the heat sinks 7 after punching, the above-mentioned problems will be eliminated, but the occurrence of scratches due to collisions between the heat sinks 7 cannot be avoided.

なお、上記以外の構造の半導体装置用ステムや半導体装
置用ベースにおいても、li+1I11部相を銀ロウ付
けしたのち仕上げメンキを施すものがあり、このような
ステムやベースにおいても前記と同様の問題点があった
Note that there are also stems for semiconductor devices and bases for semiconductor devices with structures other than those described above, in which the li+1I11 phase is silver-brazed and then finish-bladed, and such stems and bases also have the same problems as above. was there.

それゆえに、この発明の主たる目的は、少なくとも組合
トイ゛4を(Lu部Hに銀ロウ付けしたのち仕上げメッ
キを施す金属部品の製造方法において、仕上げメッキを
良好に施すことが可能な製造方法を提供することである
Therefore, the main object of the present invention is to provide a manufacturing method that can satisfactorily apply finish plating to at least the combination toy 4 (in a method of manufacturing metal parts in which the Lu portion H is silver-brazed and then finish plating is applied). It is to provide.

この発明は要約すると、銅部材を単体でその表面に電気
または無電解ニッケルメッキを施したのち、銀ロウ付け
することを特徴とする。
To summarize, the present invention is characterized in that the surface of a single copper member is electrically or electrolessly plated with nickel and then soldered with silver.

以下、この発明の実計・例を図面を参照して説明する。Hereinafter, actual designs and examples of this invention will be explained with reference to the drawings.

第4図はこの発明を第1図および第2し1に示すステム
の製造に適用した笑旌例の工稈ブロンク図である。1ず
、従来と同様に、ステム基&l+リード線6,6および
ガラスタブレット5a、5aを製作しておき、これらを
グラファイト1の封涜治具を用いて所定の関係位置に組
み立て、中性または弱還元性雰囲気中において、約95
0〜1050’c稈度の温度′で加熱して、ステム基板
lの透孔3゜3内にガラス5,5を介してリード%6.
6を気密かつ絶縁して耐層する。一方、銅板を打ち抜い
て銅部材の一例としてのヒートシンク7を?i作L、そ
の全面に電気または無電貼二ソケルメッキによ 5− りI!:PIさが0.5〜5戸程度のニッケルメッキを
於しておき、このヒートシンク7を上記ステム基板lの
透孔4に嵌合し、かしめ加工によって仮固定したのち、
ヒートシンク7の周囲に銀ロウを配置して、中性または
弱還元性雰囲気において、約800〜900°C程度の
温度で加熱して、ヒートシンク7をステム基板1に気密
に固層する。こののち、バレル研磨をhi:+すことな
く、全体に電気または無電解ニッケルメッキまたは金メ
ッキにより、厚さ2〜6μm程度の仕上げメッキを許し
た。
FIG. 4 is a culm bronch diagram of an example in which the present invention is applied to the production of the stem shown in FIGS. 1 and 2-1. 1. First, as in the past, the stem base &l+ lead wires 6, 6 and glass tablets 5a, 5a are manufactured, and these are assembled at predetermined relative positions using a sealing jig made of graphite 1, and neutral or Approximately 95% in a weakly reducing atmosphere
Heating at a temperature of 0 to 1050'c culm, lead %6.
6 is made airtight and insulated. On the other hand, what about the heat sink 7 as an example of a copper member made by punching out a copper plate? The entire surface of the product is coated with electric or non-electrical plating. : Nickel plating with a PI of about 0.5 to 5 is applied, and the heat sink 7 is fitted into the through hole 4 of the stem board l and temporarily fixed by caulking.
Silver solder is placed around the heat sink 7 and heated at a temperature of about 800 to 900° C. in a neutral or weakly reducing atmosphere, so that the heat sink 7 is hermetically fixed to the stem substrate 1. Thereafter, without barrel polishing (hi:+), the entire plate was electrically or electrolessly nickel plated or gold plated to a thickness of approximately 2 to 6 μm.

上記の製造方法によると、銀ロウ付は前のヒートシンク
7にニッケルメッキを旙すので、仮にメソ午前のヒート
シンク7の表面に汚れ、油等が付りしていても、ニッケ
ルメッキは奇麗に付層し、このようにして表面がニッケ
ルメッキで係挿された状鯵で銀ロウ付けされるので、ヒ
ートシンク7の表面に汚れや油が焼は付くことがなく、
したがって、銀ロウ付は後の仕上げメッキにおいてメッ
キの密層不良等の間ルが生じなくなる。
According to the above manufacturing method, nickel plating is applied to the heat sink 7 before silver soldering, so even if there is dirt, oil, etc. on the surface of the heat sink 7, the nickel plating will be applied neatly. In this way, the surface is coated with nickel plating and silver brazing is applied to the heat sink 7, so dirt and oil will not be baked onto the surface of the heat sink 7.
Therefore, with silver brazing, gaps such as poor plating density do not occur during the subsequent finish plating.

なお、この発明は上記実mj例以外にも、例えば 6− 銅製のステム基ayのリード線封Hf用透孔内に、鉄製
のアイレット内にガラスを介してリード線を気密かつ絶
縁して耐層した気密端子を銀ロウ伺けするとともに、ス
テム基板の上面の環状溝内に鉄製のギャップ溶接用リン
グをthlloつ付けするステムや、鉄製のフランジの
透孔内に銅製のヒートシンクfr eJ40つ句けする
とともに、このヒートシンクの気密端子嵌合孔内に、ア
イレット内にガラスを介してリード線を気密かつ細紅し
て耐層した気密711、?子を銀ロウ伺けするステムや
、鉄製の有脇筒状体の蔵面に設けた透孔に、銅製のヒー
トシンクを銀ロウ付けしてなる半導体装置用ベース等の
仲の、金倉1部品を製造する場合にも適用することがで
きる。
In addition to the above-mentioned practical example, the present invention also includes, for example: 6- A lead wire is hermetically and insulated through a glass in an iron eyelet in a lead wire sealing Hf through hole of a copper stem base ay to provide durability. In addition to soldering the layered airtight terminals with silver solder, the stem includes a steel gap welding ring attached to the annular groove on the top of the stem board, and a copper heat sink in the through hole of the iron flange. At the same time, the airtight 711, which has a thin layer of heat resistance, has a lead wire passed through the glass in the eyelet into the airtight terminal fitting hole of this heat sink. Manufactures 1 parts for semiconductor devices, such as stems for attaching metal parts with silver solder, and bases for semiconductor devices, which are made by silver soldering a copper heat sink to a through hole in the surface of a side-walled iron cylindrical body. It can also be applied when

この発明は以」二のように、少なくとも銅部材を他部拐
に銀ロウ付けしたのち仕上げメッキを加1す金P部品の
ル1(遣方法において、前記銅部材を単体でその表面に
電気または無電解によるニッケルメッキを施したのち銀
ロウ付けするものであるから、銀ロウイ」け時に銅部材
の表面がニッケルメッキに 7− よって保護されており、したがって1lqlIl剖相の
表面に打ち抜き加工時等の汚れ、油が焼き付くことがU
j正でき、仕」−〇メッキが奇麗にでき、しかも銅部材
の表面に傷が付くこともないという効果を奏する。
As described in 2 below, the present invention is based on the first method of manufacturing gold-plated parts in which at least a copper member is soldered with silver on other parts and then finish plating is applied. Alternatively, since electroless nickel plating is applied and then silver brazing, the surface of the copper member is protected by nickel plating during silver soldering, and therefore, when punching is performed on the surface of the 1lqlIl autopsy. Dirt such as dirt and oil may stick to the
Can be fixed and finished - 〇 Plating can be done neatly and the surface of the copper member will not be scratched.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図1および第2図は金FJi部品の一例として示す
半導体装置用ステムの平面図および第1図の■−n糾に
沿うllI「面図、第3図は」−記ステムの従来の」・
1造方法を説I」するための工程ブロフク図、第4図は
上記ステムのこの発明の一実左1・例による製造方法を
説明するための工程ブロックVである。 1・ 仲部材(ステム基板)、 5・・・・ ガラス、 5a・ カラスタブレット、 6 ・ ・・   リ −  ド 第1邦 、7・・・
・餉剖相(ヒートシンク)。 第1図 23  574  2 第 3 図 第4図 力゛う77フレノト        升ト’奔羨   
      Xう7〜L−4反−1↑寸    箸
1 and 2 are a plan view of a stem for a semiconductor device shown as an example of a gold FJi component, and a top view of the stem taken along the line ■-n in FIG. ”・
FIG. 4 is a process block diagram for explaining the manufacturing method of the stem according to an example of the present invention. 1. Intermediate member (stem board), 5.. Glass, 5a. Crow tablet, 6.. Lead No. 1 country, 7..
・Heat sink. Fig. 1 23 574 2 Fig. 3 Fig. 4
X u7~L-4 anti-1↑ size Chopsticks

Claims (1)

【特許請求の範囲】[Claims] 少なくとも銅部側を佃、部側に銀ロウ付けしたのち仕上
げメッキを旅す登校、部品の製造方法において、前記釦
部拐の表面に電気捷たけ無電解によるニンケルメソキを
l(L fcのち銀ロウ伺けすることを特徴とする金属
部品の製造方法。
In the manufacturing method of parts, at least the copper part side is plated with silver braze, and the part side is silver soldered, and then final plating is applied. A method for manufacturing metal parts characterized by the following characteristics:
JP19721681A 1981-12-08 1981-12-08 Manufacture of metallic parts Pending JPS58100967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19721681A JPS58100967A (en) 1981-12-08 1981-12-08 Manufacture of metallic parts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19721681A JPS58100967A (en) 1981-12-08 1981-12-08 Manufacture of metallic parts

Publications (1)

Publication Number Publication Date
JPS58100967A true JPS58100967A (en) 1983-06-15

Family

ID=16370759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19721681A Pending JPS58100967A (en) 1981-12-08 1981-12-08 Manufacture of metallic parts

Country Status (1)

Country Link
JP (1) JPS58100967A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030573A (en) * 1983-07-28 1985-02-16 Tanaka Kikinzoku Kogyo Kk Brazing method by pd-contg. ag solder

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5378952A (en) * 1976-12-23 1978-07-12 Nippon Electric Co Soldering of copper containing no oxygen
JPS56109157A (en) * 1980-02-04 1981-08-29 Toshiba Corp Brazed structural body of al material and cu material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5378952A (en) * 1976-12-23 1978-07-12 Nippon Electric Co Soldering of copper containing no oxygen
JPS56109157A (en) * 1980-02-04 1981-08-29 Toshiba Corp Brazed structural body of al material and cu material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030573A (en) * 1983-07-28 1985-02-16 Tanaka Kikinzoku Kogyo Kk Brazing method by pd-contg. ag solder
JPH035910B2 (en) * 1983-07-28 1991-01-28 Tanaka Precious Metal Ind

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