JPS6273648A - Hermetic glass terminal - Google Patents
Hermetic glass terminalInfo
- Publication number
- JPS6273648A JPS6273648A JP21325885A JP21325885A JPS6273648A JP S6273648 A JPS6273648 A JP S6273648A JP 21325885 A JP21325885 A JP 21325885A JP 21325885 A JP21325885 A JP 21325885A JP S6273648 A JPS6273648 A JP S6273648A
- Authority
- JP
- Japan
- Prior art keywords
- iron
- glass
- eyelet
- film
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6616—Vertical connections, e.g. vias
- H01L2223/6622—Coaxial feed-throughs in active or passive substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は気密ガラス端子に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a hermetic glass terminal.
(従来の技術)
半導体レーザー素子等の光素子を搭載する半導体装置用
気密ガラス端子は、光素子の特性を満足させるため、気
密特性、熱放散性に優れることが要求される。特に近年
は気密ガラス端子の小型化、搭載する素子の高出力化に
伴い熱放散性ζこ優れることが特に要求される。(Prior Art) An airtight glass terminal for a semiconductor device mounting an optical element such as a semiconductor laser element is required to have excellent airtightness and heat dissipation properties in order to satisfy the characteristics of the optical element. In particular, in recent years, with the miniaturization of airtight glass terminals and the increase in the output of mounted elements, excellent heat dissipation properties are particularly required.
ところで気密ガラス端子には、一般にいわゆるマツチド
型とコンプレッション型の二種類のタイプのものがある
。By the way, there are generally two types of airtight glass terminals: matt type and compression type.
一般にマツチド型の気密ガラス端子は、アイレット(金
属製外環)およびリード線の素材として共に鉄−ニソケ
ルーコバルト合金を用い、リード線を固定するガラスに
は硬質ガラスを用いている。In general, a matted type airtight glass terminal uses an iron-niso-cobalt alloy as the material for both the eyelet (metallic outer ring) and the lead wire, and hard glass is used for the glass that fixes the lead wire.
またコンプレッション型の気密ガラス端子は、アイレッ
トに軟綱、リード線に5270イ(鉄−ニッケル合金)
を用い、リード線を固定するガラスには軟質ガラスを用
いている。In addition, the compression type airtight glass terminal uses soft steel for the eyelet and 5270I (iron-nickel alloy) for the lead wire.
, and soft glass is used for the glass that fixes the lead wires.
このうちマツチド型の気密ガラス端子は鉄−ニッケルー
コハルト合金から成るアイレット、リード線上にガラス
の濡れ性を向上させるべく金属酸化膜(Fo:+04あ
るいはCoo ・FezO*等)を形成してガラスを溶
着するようにしているため、気密特性に優れる。Among these, the matt type airtight glass terminal has an eyelet made of an iron-nickel-cohard alloy, and a metal oxide film (Fo: +04 or Coo, FezO*, etc.) is formed on the lead wire to improve the wettability of the glass. Since it is welded, it has excellent airtight properties.
しかしながら、アイレット上に銅のヒー1〜ソンりを介
して、あるいは直接光素子が固着され、銅のピー1−シ
ンクおよびアイレットを通して熱放散が図られるのであ
るが、マツチド型のアイレットの素材である鉄−ニソケ
ルーコハルト合金の熱伝導率は0.04cal /se
c −cm =degと低く、またコンプレッション型
のアイレットの素材である軟鋼の熱伝導率も0.18c
al / sec−cm−degと低いことから、熱放
散性に劣る問題点がある。However, the optical element is fixed on the eyelet via a copper heat sink or directly, and heat dissipation is achieved through the copper heat sink and eyelet, but the material of the matte type eyelet is The thermal conductivity of iron-Nisokeru-Cohardt alloy is 0.04 cal/se
The thermal conductivity of mild steel, which is the material of the compression type eyelet, is as low as c - cm = deg, and is 0.18c.
Since the al/sec-cm-deg is low, there is a problem that the heat dissipation property is poor.
この熱放散性を改善すべく、アイレットの素材として熱
伝導率の高い銅−タングステン合金(熱伝導率0.5〜
0.7 cal /sec−cm −deg )を用い
た気密ガラス端子が知られている(特開昭60−868
78号)。In order to improve this heat dissipation, we used a copper-tungsten alloy with high thermal conductivity (thermal conductivity of 0.5~
0.7 cal/sec-cm-deg) is known (Japanese Patent Application Laid-Open No. 60-868).
No. 78).
しかしながら、アイレットに銅−タングステン合金、リ
ード線に鉄−ニソケルーコバルト合金、ガラスに硬質ガ
ラスを用いて、いわゆるマツチド型に準じたタイプにし
た場合、この銅−タングステン合金は、鉄あるいは鉄系
合金と異なり、ガラスの濡れ性を向上させる良質な金属
酸化膜が形成できない。However, when using copper-tungsten alloy for the eyelet, iron-nickel-cobalt alloy for the lead wire, and hard glass for the glass, this copper-tungsten alloy is made of iron or iron-based Unlike alloys, it cannot form a high-quality metal oxide film that improves the wettability of glass.
したがってガラスとアイレノ[・との密着が不−1分な
ため、光素子を金−シリコン共晶合金等で固着する際の
400°Cを越える加熱による熱履歴を受けると気密特
性が著しく低下する問題点がある。Therefore, since the adhesion between the glass and Aireno [. There is a problem.
またいわゆるコンプレッション型に準じたタイプとして
アイレノ!・に銅−タングステン合金、リード線に鉄−
ニッケル合金、ガラスに軟質ガラスを用いた場合には、
t]4−タングステン合金の熱膨張率が軟質ガラスのそ
れと比して小さいため、圧縮応力により気密性を得る、
ことは極めて困難である。Aireno is also a type similar to the so-called compression type!・Copper-tungsten alloy, iron lead wire
When using nickel alloy and soft glass,
t] 4-Since the coefficient of thermal expansion of tungsten alloy is smaller than that of soft glass, airtightness is achieved by compressive stress.
This is extremely difficult.
したがってアイレットに銅−タングステン合金を用いた
場合には、光素子とアイレットまたはヒートシンク上に
固着する際の加熱(約400〜450°C)による熱膨
張を受けることによってアイレットとガラス間の気密特
性が著しく阻害される。Therefore, when a copper-tungsten alloy is used for the eyelet, the airtightness between the eyelet and the glass is affected by the thermal expansion caused by heating (approximately 400 to 450°C) when the optical element is fixed to the eyelet or heat sink. Significantly inhibited.
本発明は上記の問題点に鑑みてなされたものでありその
目的とするところは、光素子を固着する際の400℃を
越える加熱後も気密特性、熱放散性共に優れる気密ガラ
ス端子を提供するにある。The present invention has been made in view of the above problems, and its purpose is to provide an airtight glass terminal that has excellent airtightness and heat dissipation properties even after heating to over 400°C when fixing an optical element. It is in.
(発明の概要)
本発明は上記目的を達成するため次の構成を備えて成る
。(Summary of the Invention) In order to achieve the above object, the present invention includes the following configuration.
すなわち、アイレットにリード線をガラスを用いて封着
する気密ガラス端子において、前記アイレットには銅−
タングステン合金が用いられ、ガラスとの密着面には、
鉄めっき、鉄−ニッケル合金めっき等の表面に鉄酸化物
が生成しうる金属皮膜が形成されており、該金属皮膜上
に形成した鉄酸化物を介して前記ガラスが封着されてい
ることを特徴とする。That is, in an airtight glass terminal in which a lead wire is sealed to an eyelet using glass, the eyelet is made of copper.
Tungsten alloy is used for the surface that comes into contact with the glass.
A metal film on which iron oxide can be formed is formed on the surface of iron plating, iron-nickel alloy plating, etc., and the glass is sealed via the iron oxide formed on the metal film. Features.
(実施例)
以下には本発明を具体化した好適な実施例を添付図面に
基づいて詳細に説明する。(Example) Hereinafter, preferred embodiments embodying the present invention will be described in detail based on the accompanying drawings.
第1図(a)において、10はアイレットであり、銅−
タングステン合金を用いている。In FIG. 1(a), 10 is an eyelet, and copper-
Tungsten alloy is used.
12は鉄〜ニソゲルーコバルト合金製のり一ト線であり
、硬質ガラス14によってアイレット10に電気的に絶
縁して封着されている。Reference numeral 12 denotes a glued wire made of an iron-nisogel-cobalt alloy, which is electrically insulated and sealed to the eyelet 10 by a hard glass 14.
16は同じく鉄−ニノケルーコバルト合金製のアースリ
ート線であり、アイμ・ノド10と導通して固定されて
いる。Reference numeral 16 denotes a ground wire made of an iron-cobalt alloy, which is electrically connected to and fixed to the eye μ node 10.
18はアイレット10上に金−シリコン共晶合金等によ
って固定されている光素子であり、金属ワイヤ20によ
ってリード綿12先端と接続される。なおアイレット1
0上には適宜なキャップ、光コネクタ等(図示せず)が
固定される。An optical element 18 is fixed on the eyelet 10 with a gold-silicon eutectic alloy or the like, and is connected to the tip of the lead cotton 12 by a metal wire 20. Furthermore, eyelet 1
A suitable cap, optical connector, etc. (not shown) are fixed on the 0.
第1図(b)はアイレットの形状が異なる他の実施例を
示す。FIG. 1(b) shows another embodiment in which the shape of the eyelet is different.
本発明において特徴的なことは、アイレット10の硬質
ガラス14との封着面に、鉄めっき、鉄−ニソケルーコ
ハルト合金めっき、鉄−コハルト合金めっき等の鉄酸化
物を生成しうる金属皮膜22を形成し、酸化雰囲気中で
加熱(酸化処理)して該金属皮膜22上に鉄酸化物を形
成した後、硬質ガラス14で封着した点にある。A characteristic feature of the present invention is that the sealing surface of the eyelet 10 with the hard glass 14 is coated with a metal coating that can generate iron oxides, such as iron plating, iron-nisokeru-cohard alloy plating, iron-cohard alloy plating, etc. 22 is formed, heated in an oxidizing atmosphere (oxidation treatment) to form iron oxide on the metal film 22, and then sealed with hard glass 14.
硬質ガラス14での封着は1000℃の中性雰囲気中で
行うのが好適である。The sealing with the hard glass 14 is preferably performed in a neutral atmosphere at 1000°C.
なお硬質ガラス14と封着するリード線12、アースリ
ート線16上にもあらかじめ酸化処理により金属酸化皮
膜を施しておくことはもらろんである。Note that it is natural to apply a metal oxide film on the lead wire 12 and the ground wire 16 which are sealed to the hard glass 14 by oxidation treatment in advance.
金属皮膜は上述の他、第2図に示すように鉄めっき24
とニッケルめっき26との二層めっき、あるいは第3図
のように、鉄めっき24、二・ノケルめっき26、コバ
ルトめっき28の3層めっき、または第4図のように鉄
めっき24、コバルトめっき28の二層めっき等のよう
に鉄を含む多層めっきによるものであってもよい。この
場合鉄めっきが下層にあっても、酸化処理の際の加熱に
より鉄成分が一部表面に拡散して、良質な鉄酸化物の形
成が可能となるからである。In addition to the above-mentioned metal coating, as shown in Fig. 2, iron plating 24 is used.
Two-layer plating with and nickel plating 26, or three-layer plating with iron plating 24, Ni-Nokel plating 26, and cobalt plating 28 as shown in Figure 3, or iron plating 24 and cobalt plating 28 as shown in Figure 4. It may also be multilayer plating containing iron, such as two-layer plating. In this case, even if iron plating is present in the lower layer, the heating during the oxidation treatment will partially diffuse the iron component to the surface, making it possible to form high-quality iron oxide.
なお金属皮膜はめっきによる形成の他、茎着、スパッタ
リング等で形成してもよい。Note that the metal film may be formed by plating, sputtering, etc. in addition to being formed by plating.
アイレット10素材である銅−タングステン合金、リー
ド線12、アースリード線16素材である鉄−ニソケル
ーコハルト合金、硬質ガラス14の熱膨張率は比較的に
近接しているとともに、ガラス14と鉄酸化物との密着
性は極めて強固であるから、光素子固着時の加熱後も気
密特性が極めて良好のまま保持される。The coefficients of thermal expansion of the copper-tungsten alloy that is the material of the eyelet 10, the iron-Nisokeru-Cohardt alloy that is the material of the lead wire 12 and the ground lead wire 16, and the hard glass 14 are relatively close to each other. Since the adhesion with the oxide is extremely strong, the airtightness is maintained extremely well even after heating when fixing the optical element.
もちろん銅−タングステン合金は前記したように熱伝導
率が従来の軟綱や鉄−ニソケルーコハルト合金に比して
格段に高いから、従来にものに比して少なくとも2〜5
倍もの優れた熱放散性を有する気密端子が得られた。Of course, as mentioned above, copper-tungsten alloy has a much higher thermal conductivity than conventional soft steel or iron-nickel-cohard alloy, so it is at least 2 to 5
An airtight terminal with twice as good heat dissipation properties was obtained.
なお、本発明は、光素子用に限られず、特に3″き放散
性が必要とされる気密ガラス端子に適用できることはも
ちろんである。It should be noted that the present invention is not limited to applications for optical devices, but can of course be applied to airtight glass terminals that particularly require 3" dissipation properties.
(発明の効果)
以上のように本発明に係る気密ガラス端子乙こよれば、
加熱による熱履歴を経た後も気密特性、熱放散性共に傍
れるという著効を奏する。(Effects of the Invention) As described above, the airtight glass terminal according to the present invention has
It has the remarkable effect of maintaining both airtightness and heat dissipation properties even after undergoing a thermal history due to heating.
第1図は本発明に係る気密ガラス端子の一例を示す断面
図、第2図乃至第4図はアイレット表面に形成するめっ
き皮膜の他の実施例を示す説明断面図である。
IO・・・アイレット、 12・・・リード線、
14・・・硬質ガラス、 16・・・アースリ
ード綿、 I8・・・光素子、20・・・金属ワイ
ヤ、 22・・・金属皮膜、24・・・鉄めっき、
26・・・ニッケルめっき、 28・・・コ
バルトめっき。FIG. 1 is a cross-sectional view showing an example of an airtight glass terminal according to the present invention, and FIGS. 2 to 4 are explanatory cross-sectional views showing other examples of the plating film formed on the eyelet surface. IO...eyelet, 12...lead wire,
14...Hard glass, 16...Earth lead cotton, I8...Optical element, 20...Metal wire, 22...Metal coating, 24...Iron plating,
26...Nickel plating, 28...Cobalt plating.
Claims (1)
密ガラス端子において、 前記アイレットには銅−タングステン合金 が用いられ、ガラスとの密着面には、鉄めっき、鉄−ニ
ッケル合金めっき等の表面に鉄酸化物が生成しうる金属
皮膜が形成されており、該金属皮膜上に形成した鉄酸化
物を介して前記ガラスが封着されていることを特徴とす
る気密ガラス端子。[Claims] 1. In an airtight glass terminal in which a lead wire is sealed to an eyelet using glass, the eyelet is made of a copper-tungsten alloy, and the surface in close contact with the glass is coated with iron plating or iron-tungsten alloy. An airtight glass characterized in that a metal film on which iron oxide can be formed is formed on the surface of nickel alloy plating, etc., and the glass is sealed via the iron oxide formed on the metal film. terminal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21325885A JPS6273648A (en) | 1985-09-26 | 1985-09-26 | Hermetic glass terminal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21325885A JPS6273648A (en) | 1985-09-26 | 1985-09-26 | Hermetic glass terminal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6273648A true JPS6273648A (en) | 1987-04-04 |
JPH0455336B2 JPH0455336B2 (en) | 1992-09-03 |
Family
ID=16636116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21325885A Granted JPS6273648A (en) | 1985-09-26 | 1985-09-26 | Hermetic glass terminal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6273648A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102569102A (en) * | 2011-12-10 | 2012-07-11 | 中国振华集团永光电子有限公司 | Hermetic package method and structure of transistor base and transistor pin |
WO2013080396A1 (en) * | 2011-11-30 | 2013-06-06 | パナソニック株式会社 | Nitride semiconductor light-emitting device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4936778A (en) * | 1972-08-10 | 1974-04-05 | ||
JPS4960682A (en) * | 1972-10-13 | 1974-06-12 | ||
JPS53136960A (en) * | 1977-05-06 | 1978-11-29 | Toshiba Corp | Manufacture of stem |
JPS6086878A (en) * | 1983-10-18 | 1985-05-16 | Sumitomo Electric Ind Ltd | Optical element package |
-
1985
- 1985-09-26 JP JP21325885A patent/JPS6273648A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4936778A (en) * | 1972-08-10 | 1974-04-05 | ||
JPS4960682A (en) * | 1972-10-13 | 1974-06-12 | ||
JPS53136960A (en) * | 1977-05-06 | 1978-11-29 | Toshiba Corp | Manufacture of stem |
JPS6086878A (en) * | 1983-10-18 | 1985-05-16 | Sumitomo Electric Ind Ltd | Optical element package |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013080396A1 (en) * | 2011-11-30 | 2013-06-06 | パナソニック株式会社 | Nitride semiconductor light-emitting device |
CN103907249A (en) * | 2011-11-30 | 2014-07-02 | 松下电器产业株式会社 | Nitride semiconductor light-emitting device |
US20140241388A1 (en) * | 2011-11-30 | 2014-08-28 | Panasonic Corporation | Nitride semiconductor light-emitting system |
JPWO2013080396A1 (en) * | 2011-11-30 | 2015-04-27 | パナソニック株式会社 | Nitride semiconductor light emitting device |
US9059569B2 (en) | 2011-11-30 | 2015-06-16 | Panasonic Intellectual Property Management Co., Ltd. | Nitride semiconductor light-emitting system |
CN102569102A (en) * | 2011-12-10 | 2012-07-11 | 中国振华集团永光电子有限公司 | Hermetic package method and structure of transistor base and transistor pin |
Also Published As
Publication number | Publication date |
---|---|
JPH0455336B2 (en) | 1992-09-03 |
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Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |