JPS60101928A - エピタキシヤル層の形成方法 - Google Patents
エピタキシヤル層の形成方法Info
- Publication number
- JPS60101928A JPS60101928A JP59149819A JP14981984A JPS60101928A JP S60101928 A JPS60101928 A JP S60101928A JP 59149819 A JP59149819 A JP 59149819A JP 14981984 A JP14981984 A JP 14981984A JP S60101928 A JPS60101928 A JP S60101928A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- autodoping
- epitaxial layer
- arsenic
- boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 17
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 17
- 229910052796 boron Inorganic materials 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 claims 1
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 22
- 230000008021 deposition Effects 0.000 description 18
- 238000002955 isolation Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/916—Autodoping control or utilization
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/543,555 US4504330A (en) | 1983-10-19 | 1983-10-19 | Optimum reduced pressure epitaxial growth process to prevent autodoping |
| US543555 | 1983-10-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60101928A true JPS60101928A (ja) | 1985-06-06 |
| JPH0526326B2 JPH0526326B2 (OSRAM) | 1993-04-15 |
Family
ID=24168529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59149819A Granted JPS60101928A (ja) | 1983-10-19 | 1984-07-20 | エピタキシヤル層の形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4504330A (OSRAM) |
| EP (1) | EP0139990B1 (OSRAM) |
| JP (1) | JPS60101928A (OSRAM) |
| DE (1) | DE3476492D1 (OSRAM) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63185061A (ja) * | 1987-01-28 | 1988-07-30 | Toshiba Corp | 半導体装置の製造方法 |
| JPH01161826A (ja) * | 1987-12-18 | 1989-06-26 | Toshiba Corp | 気相エピタキシャル成長法 |
| FR2766845B1 (fr) * | 1997-07-31 | 1999-10-15 | Sgs Thomson Microelectronics | Procede d'epitaxie sur un substrat de silicium comprenant des zones fortement dopees a l'arsenic |
| US6612240B1 (en) | 2000-09-15 | 2003-09-02 | Silverbrook Research Pty Ltd | Drying of an image on print media in a modular commercial printer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54159171A (en) * | 1978-06-05 | 1979-12-15 | Ibm | Method of forming epitaxial silicon layer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3669769A (en) * | 1970-09-29 | 1972-06-13 | Ibm | Method for minimizing autodoping in epitaxial deposition |
| US3765960A (en) * | 1970-11-02 | 1973-10-16 | Ibm | Method for minimizing autodoping in epitaxial deposition |
| US4263336A (en) * | 1979-11-23 | 1981-04-21 | Motorola, Inc. | Reduced pressure induction heated reactor and method |
-
1983
- 1983-10-19 US US06/543,555 patent/US4504330A/en not_active Expired - Fee Related
-
1984
- 1984-07-20 JP JP59149819A patent/JPS60101928A/ja active Granted
- 1984-08-23 EP EP84110058A patent/EP0139990B1/en not_active Expired
- 1984-08-23 DE DE8484110058T patent/DE3476492D1/de not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54159171A (en) * | 1978-06-05 | 1979-12-15 | Ibm | Method of forming epitaxial silicon layer |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0139990A3 (en) | 1985-08-28 |
| EP0139990A2 (en) | 1985-05-08 |
| DE3476492D1 (en) | 1989-03-02 |
| JPH0526326B2 (OSRAM) | 1993-04-15 |
| EP0139990B1 (en) | 1989-01-25 |
| US4504330A (en) | 1985-03-12 |
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