JPS60100432A - リフトオフ金属パタ−ン形成方法 - Google Patents

リフトオフ金属パタ−ン形成方法

Info

Publication number
JPS60100432A
JPS60100432A JP58206890A JP20689083A JPS60100432A JP S60100432 A JPS60100432 A JP S60100432A JP 58206890 A JP58206890 A JP 58206890A JP 20689083 A JP20689083 A JP 20689083A JP S60100432 A JPS60100432 A JP S60100432A
Authority
JP
Japan
Prior art keywords
metal
substrate
resist
thickness
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58206890A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0149015B2 (member.php
Inventor
Toshio Nonaka
野中　敏夫
Hajime Matsuura
元 松浦
Toshimasa Ishida
俊正 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP58206890A priority Critical patent/JPS60100432A/ja
Publication of JPS60100432A publication Critical patent/JPS60100432A/ja
Publication of JPH0149015B2 publication Critical patent/JPH0149015B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/00—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
JP58206890A 1983-11-05 1983-11-05 リフトオフ金属パタ−ン形成方法 Granted JPS60100432A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58206890A JPS60100432A (ja) 1983-11-05 1983-11-05 リフトオフ金属パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58206890A JPS60100432A (ja) 1983-11-05 1983-11-05 リフトオフ金属パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS60100432A true JPS60100432A (ja) 1985-06-04
JPH0149015B2 JPH0149015B2 (member.php) 1989-10-23

Family

ID=16530741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58206890A Granted JPS60100432A (ja) 1983-11-05 1983-11-05 リフトオフ金属パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS60100432A (member.php)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5017459A (en) * 1989-04-26 1991-05-21 Eastman Kodak Company Lift-off process
US5338703A (en) * 1992-10-26 1994-08-16 Mitsubishi Denki Kabushiki Kaisha Method for producing a recessed gate field effect transistor
US5385851A (en) * 1992-11-30 1995-01-31 Kabushiki Kaisha Toshiba Method of manufacturing HEMT device using novolak-based positive-type resist
GB2485089A (en) * 2009-08-24 2012-05-02 Fuji Chemical Company Ltd Acrylic resin composition and process for production thereof, and architectural material, fashion accessory and optical material each produced using the

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS547873A (en) * 1977-06-21 1979-01-20 Fujitsu Ltd Manufacture for semiconductor device
JPS5646536A (en) * 1979-09-22 1981-04-27 Nippon Telegr & Teleph Corp <Ntt> Formation of microminiature electrode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS547873A (en) * 1977-06-21 1979-01-20 Fujitsu Ltd Manufacture for semiconductor device
JPS5646536A (en) * 1979-09-22 1981-04-27 Nippon Telegr & Teleph Corp <Ntt> Formation of microminiature electrode

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5017459A (en) * 1989-04-26 1991-05-21 Eastman Kodak Company Lift-off process
US5338703A (en) * 1992-10-26 1994-08-16 Mitsubishi Denki Kabushiki Kaisha Method for producing a recessed gate field effect transistor
US5385851A (en) * 1992-11-30 1995-01-31 Kabushiki Kaisha Toshiba Method of manufacturing HEMT device using novolak-based positive-type resist
GB2485089A (en) * 2009-08-24 2012-05-02 Fuji Chemical Company Ltd Acrylic resin composition and process for production thereof, and architectural material, fashion accessory and optical material each produced using the
GB2485089B (en) * 2009-08-24 2014-03-12 Fuji Chemical Company Ltd Acrylic resin composition, method of manufacturing the same, and architectural material, fashion accessory and optical material formed using the same

Also Published As

Publication number Publication date
JPH0149015B2 (member.php) 1989-10-23

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