JPS5999720A - レジスト像形成方法 - Google Patents
レジスト像形成方法Info
- Publication number
- JPS5999720A JPS5999720A JP20847182A JP20847182A JPS5999720A JP S5999720 A JPS5999720 A JP S5999720A JP 20847182 A JP20847182 A JP 20847182A JP 20847182 A JP20847182 A JP 20847182A JP S5999720 A JPS5999720 A JP S5999720A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- rinsing
- chloroacrylate
- stage
- ipa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20847182A JPS5999720A (ja) | 1982-11-30 | 1982-11-30 | レジスト像形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20847182A JPS5999720A (ja) | 1982-11-30 | 1982-11-30 | レジスト像形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5999720A true JPS5999720A (ja) | 1984-06-08 |
JPH0356469B2 JPH0356469B2 (cs) | 1991-08-28 |
Family
ID=16556720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20847182A Granted JPS5999720A (ja) | 1982-11-30 | 1982-11-30 | レジスト像形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5999720A (cs) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5403699A (en) * | 1989-10-19 | 1995-04-04 | Fujitsu Limited | Process for formation of resist patterns |
JP2007191399A (ja) * | 2006-01-17 | 2007-08-02 | Arakawa Chem Ind Co Ltd | 脂環式化合物およびその製造方法 |
WO2016208313A1 (ja) * | 2015-06-23 | 2016-12-29 | 富士フイルム株式会社 | 現像液、パターン形成方法、及び電子デバイスの製造方法 |
-
1982
- 1982-11-30 JP JP20847182A patent/JPS5999720A/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5403699A (en) * | 1989-10-19 | 1995-04-04 | Fujitsu Limited | Process for formation of resist patterns |
JP2007191399A (ja) * | 2006-01-17 | 2007-08-02 | Arakawa Chem Ind Co Ltd | 脂環式化合物およびその製造方法 |
WO2016208313A1 (ja) * | 2015-06-23 | 2016-12-29 | 富士フイルム株式会社 | 現像液、パターン形成方法、及び電子デバイスの製造方法 |
JPWO2016208313A1 (ja) * | 2015-06-23 | 2018-04-12 | 富士フイルム株式会社 | パターン形成方法、及び電子デバイスの製造方法 |
US10562991B2 (en) | 2015-06-23 | 2020-02-18 | Fujifilm Corporation | Developer, pattern forming method, and electronic device manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
JPH0356469B2 (cs) | 1991-08-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3748596B2 (ja) | レジスト材料及びレジストパターンの形成方法 | |
EP0064222B1 (en) | Process for forming resist patterns | |
JPH02115853A (ja) | 半導体装置の製造方法 | |
JPS5999720A (ja) | レジスト像形成方法 | |
JPH0210824A (ja) | 電子線レジスト現像方法 | |
JPH02248952A (ja) | 感光性組成物 | |
JPS59125730A (ja) | ポジ型レジスト組成物 | |
JPS617835A (ja) | レジスト材料 | |
JPS5828571B2 (ja) | 微細加工用レジスト形成方法 | |
JPS58114032A (ja) | パタ−ン形成方法 | |
JP2867509B2 (ja) | レジストパターンの形成方法 | |
JP2871010B2 (ja) | ポジ型電子線レジスト液 | |
JPH0381143B2 (cs) | ||
US4520097A (en) | Negative-type resist sensitive to ionizing radiation | |
JPS6070443A (ja) | 微細パタ−ンの形成方法 | |
JPS60252348A (ja) | パタ−ン形成方法 | |
JPS6155922A (ja) | パタ−ン形成方法 | |
JPS5860536A (ja) | レジスト像形成方法 | |
JPS58143343A (ja) | 現像溶媒 | |
JPH0210354A (ja) | パターン形成方法 | |
JPH01217341A (ja) | ポジ型電子線レジストのパターン形成方法 | |
JPS6072231A (ja) | レジストパタ−ン形成方法 | |
JPS6046551A (ja) | デバイス基板のパタ−ン形成方法 | |
JPS6045240A (ja) | アルカリ現像ネガ型レジスト組成物 | |
JPS60138541A (ja) | パタ−ン形成方法 |