JPS5992581A - 光結合半導体装置 - Google Patents

光結合半導体装置

Info

Publication number
JPS5992581A
JPS5992581A JP57203138A JP20313882A JPS5992581A JP S5992581 A JPS5992581 A JP S5992581A JP 57203138 A JP57203138 A JP 57203138A JP 20313882 A JP20313882 A JP 20313882A JP S5992581 A JPS5992581 A JP S5992581A
Authority
JP
Japan
Prior art keywords
light
photodiode
semiconductor device
light receiving
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57203138A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6329426B2 (enrdf_load_stackoverflow
Inventor
Toshibumi Yoshikawa
俊文 吉川
Masaru Kubo
勝 久保
Hisao Nagao
長尾　久夫
Nobuhiro Nishimoto
宜弘 西本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP57203138A priority Critical patent/JPS5992581A/ja
Publication of JPS5992581A publication Critical patent/JPS5992581A/ja
Publication of JPS6329426B2 publication Critical patent/JPS6329426B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP57203138A 1982-11-18 1982-11-18 光結合半導体装置 Granted JPS5992581A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57203138A JPS5992581A (ja) 1982-11-18 1982-11-18 光結合半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57203138A JPS5992581A (ja) 1982-11-18 1982-11-18 光結合半導体装置

Publications (2)

Publication Number Publication Date
JPS5992581A true JPS5992581A (ja) 1984-05-28
JPS6329426B2 JPS6329426B2 (enrdf_load_stackoverflow) 1988-06-14

Family

ID=16469038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57203138A Granted JPS5992581A (ja) 1982-11-18 1982-11-18 光結合半導体装置

Country Status (1)

Country Link
JP (1) JPS5992581A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0254426U (enrdf_load_stackoverflow) * 1988-10-14 1990-04-19

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519590A (enrdf_load_stackoverflow) * 1974-07-12 1976-01-26 Mitsubishi Electric Corp
JPS5234352A (en) * 1975-09-11 1977-03-16 Allen Bradley Co Resistor
JPS5914180A (ja) * 1982-07-15 1984-01-25 Matsushita Electric Ind Co Ltd 記録再生装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519590A (enrdf_load_stackoverflow) * 1974-07-12 1976-01-26 Mitsubishi Electric Corp
JPS5234352A (en) * 1975-09-11 1977-03-16 Allen Bradley Co Resistor
JPS5914180A (ja) * 1982-07-15 1984-01-25 Matsushita Electric Ind Co Ltd 記録再生装置

Also Published As

Publication number Publication date
JPS6329426B2 (enrdf_load_stackoverflow) 1988-06-14

Similar Documents

Publication Publication Date Title
US10276610B2 (en) Semiconductor photomultiplier
CN100432641C (zh) 光检测装置
JP2020504500A (ja) 光検出器アレイのデジタルフロントエンドとのハイブリッド統合
US4318115A (en) Dual junction photoelectric semiconductor device
JPH0669040B2 (ja) 光半導体装置
US3978343A (en) Optically coupled isolator circuit having increased common mode rejection
US5629550A (en) Photodiode built-in semiconductor device with dummy photodiode
US6864555B2 (en) Photo detector methods to reduce the disabling effects of displacement current in opto-couplers
JPS5992581A (ja) 光結合半導体装置
KR102587737B1 (ko) Esd 보호 반도체 광전자 증배관
US6989522B2 (en) Light-receiving module and light-receiving device having malfunction preventing structure
JP3497977B2 (ja) 受光素子およびこれを用いた光結合装置
JPS5996784A (ja) 光結合半導体装置
EP0222338B1 (en) Semiconductor photo-sensing device
JPH06163977A (ja) フォトカプラ
JPS58131525A (ja) 赤外線検出装置
JPH012353A (ja) 半導体装置
JPH0485885A (ja) フォトカプラ
JPH04280685A (ja) 受光装置
JPS6329428B2 (enrdf_load_stackoverflow)
JPH02137275A (ja) ホトカプラ
JP3794606B2 (ja) 受光素子用接合容量
JPH0730143A (ja) 光結合半導体装置
JPH04242980A (ja) 受光素子
JPH04354379A (ja) フォトカプラ