JPS59922A - Method for detecting compositive deviation in mask rom - Google Patents
Method for detecting compositive deviation in mask romInfo
- Publication number
- JPS59922A JPS59922A JP57109520A JP10952082A JPS59922A JP S59922 A JPS59922 A JP S59922A JP 57109520 A JP57109520 A JP 57109520A JP 10952082 A JP10952082 A JP 10952082A JP S59922 A JPS59922 A JP S59922A
- Authority
- JP
- Japan
- Prior art keywords
- data
- rom
- deviation
- synthesis
- check mark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 21
- 238000003786 synthesis reaction Methods 0.000 claims description 21
- 230000002194 synthesizing effect Effects 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明はＲＯＭ内データとＲＯＭ外データによりマス
クＲＯＭデータを合成する方法において、その合成ずれ
をチェックするマスクＲＯＭ合成ずれ検出方法に関する
。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a mask ROM synthesis deviation detection method for checking synthesis deviation in a method of synthesizing mask ROM data using ROM internal data and external ROM data.
従来、ＲＯＭ内データとＲＯＭ外データによりマスクＲ
ＯＭデータを合成する方法においては合成されたマスク
ｌ（ＯＭの精良チェックは実行されていなかった。ここ
で、ＲＯＭ外データとはマスクＲＯＭを合成する場合の
固定データで、ＲＯＭ内データとはマスクＲＯＭを合成
する場合の可変データでユーザ固有のデータである。そ
して、従歩は第１図に示すよプにレティクル１１に形成
されるＲＯＭ外のパターンＡと、レティクル１２に形成
される）４０Ｍ内のパターンＢとが合成されてレティク
ル１３上にＲＯＭ外のパターンＡとＲＯＭ内のパターン
Ｂとの合成されたパターンが形成される。このように合
成されたパターンがずれていないかということはパター
ンそのものを見るしかなかった・〔背景技術の問題点〕
このように、従来のようなマスクＲＯＭ合成方法におい
ては合成精度はいいかげんで、特に精度を有するマスク
ＲＯＭではその精度が問題となっていた◎つまり、少し
でも合成したデータがずれるとＲＯＭ部のデータがずれ
℃誤動作の原因となっていた。Conventionally, mask R was created using data in ROM and data outside ROM.
In the method of synthesizing OM data, the synthesized mask l (the OM quality check was not performed. Here, data outside ROM is fixed data when synthesizing mask ROM, and data inside ROM is fixed data when synthesizing mask ROM. This is variable data and user-specific data when composing ROMs.As shown in FIG. Pattern B inside the ROM is combined to form a combined pattern of the pattern A outside the ROM and the pattern B inside the ROM on the reticle 13. The only way to check if the synthesized pattern is out of place is to look at the pattern itself. [Problems with background technology] As described above, in the conventional mask ROM synthesis method, the synthesis accuracy is poor. In particular, the precision of the mask ROM was a problem. In other words, if the synthesized data shifted even slightly, the data in the ROM section would shift, causing malfunction.
この発明は上記の点に鑑みてなされたもので、その目的
はＲ，ＯＭ内データとＲＯＭ外データによりマスクＲＯ
Ｍデータを合成する方法において、ＲＯＭ内データと１
（０Ｍ外データに合成ずれチェックマークを設けて、そ
の合成精度を上げるようにしたマスクＲＯＭ合成ずれ検
出方法を提供することにある。This invention was made in view of the above points, and its purpose is to perform mask RO by using data in R, OM and data outside ROM.
In the method of synthesizing M data, data in ROM and 1
(An object of the present invention is to provide a mask ROM synthesis deviation detection method that increases the synthesis accuracy by providing a synthesis deviation check mark on non-0M data.
ＲＯＭ内データとＲＯＭ外データによりマスク）ＬＯＭ
データを合成する方法において、 ）１０Ｍ内データ及
び８０Ｍ外データのそれぞれに合成ずれチェックマーク
を設けてマスクＲＯＭの合成精度を上げＲＯＭ部のデー
タずれをなくすようにしたマスクＲＯＭ合成ずれ検出方
法である。Masked by data in ROM and data outside ROM) LOM
In the method of synthesizing data, this is a mask ROM synthesis deviation detection method in which a synthesis deviation check mark is provided for each of the data within 10M and the data outside 80M to improve the synthesis accuracy of the mask ROM and eliminate data deviation in the ROM section. .
以下、図面を参照してこの発明の一実施例を説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第２図に示すよ５に、ＲＯＭ外データはレティクル１４
上に形成された場合、第１の合成ずれチェックマークＣ
はレティクル１４の下方に示した如く左斜め方向に配置
された２つの正方形のマークにより構成される◎また。As shown in FIG.
If formed on the top, the first composite shift check mark C
is composed of two square marks placed diagonally to the left as shown below the reticle 14.
ＲＯＭ内データがレティクル１５上に形成された場合、
第２の合成ずれチェックマークＤはレティクル１６の下
方に示した如く右斜め方向に配置された２つの正方形の
マークにより構成さ ・れる。そして、ＲＯＭ外データ
とＲＯＭ内データとが合成されてレティクル１６上に形
成された場合、上記第１の合成ずれチェックマークＣと
上記第２の合成ずれチェックマークＤが合成されて、合
成ずれチェックマー・りＥとなる。上記合成ずれチェッ
クマークＥはレティクル１６の下方に示した如く、４つ
の正方形により構成される。そして、合成後の間隔ｘ、
ｙの値を決めておけば、その値以内にｘ、ｙの値が入っ
ていれば、マスクＲＯＭの合成の合否が正確にできる。When the data in the ROM is formed on the reticle 15,
The second synthesis deviation check mark D is composed of two square marks arranged diagonally to the right as shown below the reticle 16. Then, when the data outside the ROM and the data inside the ROM are combined and formed on the reticle 16, the first combination deviation check mark C and the second combination deviation check mark D are combined to check the combination deviation. It becomes Ma Ri E. As shown below the reticle 16, the synthesis deviation check mark E is composed of four squares. Then, the interval x after synthesis,
If the value of y is determined, if the values of x and y are within that value, it is possible to accurately determine whether or not the mask ROM is combined.
以上詳述したようにこの発明によれば、合成ずれチェッ
クマークをＲＯＭ外データと）ＬＯＭ内データの上部及
び下部に配置して合成後のマスクＩ（、ＯＭデータの合
成ずれをチェックするようにしたので、マスク１（ｌＯ
Ｍデータの合成精度を上げてＲＯＭ部のデータずれをな
くすよ５にしたマスクｉｔ ＯＭ合成ずれ検出方法を提
供することができる。As described in detail above, according to the present invention, synthesis deviation check marks are placed above and below the LOM data (outside ROM data) to check the synthesis deviation between the mask I (and OM data) after synthesis. Therefore, mask 1 (lO
It is possible to provide a mask it OM synthesis deviation detection method that improves the synthesis accuracy of M data and eliminates data deviation in the ROM section.
第１図は従来のマスクＲＯＭ合成方法を示す図、［４２
図はこの発明の一実施例な示すマスクＲＯＭ合成ずれ検
出方法を示す図である。
１１〜１６・・・レティクル。
出願人代理人 弁理士 鈴 江 武 彦第１図
第２図FIG. 1 is a diagram showing a conventional mask ROM synthesis method, [42
The figure is a diagram showing a method for detecting mask ROM synthesis deviation, which is an embodiment of the present invention. 11-16... Reticle. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2
Claims (1)
ータを合成する方法において、 ［３Ｍ外データに設け
た第１の合成ずれチェックマークとＲＯＭ内データに設
けた第２の合成ずれチェックマークとによりマスクＲＯ
Ｍデータのずれを検出するよ５Ｋしたことを特徴とする
マスクＲＯＭ合成ずれ検出方法。In a method of synthesizing mask ROM data using data in the BOM and data outside the ROM, [Mask ROM is detected by a first synthesis deviation check mark provided on the data outside the 3M and a second synthesis deviation check mark provided on the data in the ROM.
A mask ROM synthesis deviation detection method characterized in that a deviation of M data is detected by 5K.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57109520A JPS59922A (en) | 1982-06-25 | 1982-06-25 | Method for detecting compositive deviation in mask rom |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57109520A JPS59922A (en) | 1982-06-25 | 1982-06-25 | Method for detecting compositive deviation in mask rom |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59922A true JPS59922A (en) | 1984-01-06 |
Family
ID=14512336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57109520A Pending JPS59922A (en) | 1982-06-25 | 1982-06-25 | Method for detecting compositive deviation in mask rom |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59922A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61502155A (en) * | 1984-05-09 | 1986-09-25 | ケセナ−，ヘルマン，ポウルス，マリア | Method and apparatus for forming aesthetically spectacular liquid displays |
| JPH034958A (en) * | 1989-05-23 | 1991-01-10 | Wet Enterprises Inc | Waterspout |
| JPH08103708A (en) * | 1991-06-19 | 1996-04-23 | Kawamura Funsui Kk | Submerged fountain protective device |
| CN110842375A (en) * | 2019-11-15 | 2020-02-28 | Tcl华星光电技术有限公司 | Code printing device, manufacturing method and display device |
-
1982
- 1982-06-25 JP JP57109520A patent/JPS59922A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61502155A (en) * | 1984-05-09 | 1986-09-25 | ケセナ−，ヘルマン，ポウルス，マリア | Method and apparatus for forming aesthetically spectacular liquid displays |
| JPH034958A (en) * | 1989-05-23 | 1991-01-10 | Wet Enterprises Inc | Waterspout |
| JPH08103708A (en) * | 1991-06-19 | 1996-04-23 | Kawamura Funsui Kk | Submerged fountain protective device |
| CN110842375A (en) * | 2019-11-15 | 2020-02-28 | Tcl华星光电技术有限公司 | Code printing device, manufacturing method and display device |
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