JPS59922A - Method for detecting compositive deviation in mask rom - Google Patents

Method for detecting compositive deviation in mask rom

Info

Publication number
JPS59922A
JPS59922A JP57109520A JP10952082A JPS59922A JP S59922 A JPS59922 A JP S59922A JP 57109520 A JP57109520 A JP 57109520A JP 10952082 A JP10952082 A JP 10952082A JP S59922 A JPS59922 A JP S59922A
Authority
JP
Japan
Prior art keywords
data
rom
deviation
synthesis
check mark
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57109520A
Other languages
Japanese (ja)
Inventor
Takuya Sawano
沢野 拓也
Kazuyuki Uchida
内田 和幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57109520A priority Critical patent/JPS59922A/en
Publication of JPS59922A publication Critical patent/JPS59922A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To eliminate the data deviation of an ROM part by a method wherein a compositive deviation check mark is provided on both inside data and outside data of the ROM, thereby enabling to increase the compositive accuracy. CONSTITUTION:The first resultant deviation check mark C consists of two square marks arranged diagonally from upper left to lower right as shown below a reticle 14. The second resultant deviation check mark D consists of two square marks arranged diagonally from upper right o lower left as shown below a reticle 15. The resultant check mark E is formed by combining the marks C and D. If the value of intervals x and y after composition is determined first and the value of x and y remains within said value, the composition of the mark ROM can be performed accurately.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明はROM内データとROM外データによりマス
クROMデータを合成する方法において、その合成ずれ
をチェックするマスクROM合成ずれ検出方法に関する
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a mask ROM synthesis deviation detection method for checking synthesis deviation in a method of synthesizing mask ROM data using ROM internal data and external ROM data.

〔発明の技術的背景〕[Technical background of the invention]

従来、ROM内データとROM外データによりマスクR
OMデータを合成する方法においては合成されたマスク
l(OMの精良チェックは実行されていなかった。ここ
で、ROM外データとはマスクROMを合成する場合の
固定データで、ROM内データとはマスクROMを合成
する場合の可変データでユーザ固有のデータである。そ
して、従歩は第1図に示すよプにレティクル11に形成
されるROM外のパターンAと、レティクル12に形成
される)40M内のパターンBとが合成されてレティク
ル13上にROM外のパターンAとROM内のパターン
Bとの合成されたパターンが形成される。このように合
成されたパターンがずれていないかということはパター
ンそのものを見るしかなかった・〔背景技術の問題点〕 このように、従来のようなマスクROM合成方法におい
ては合成精度はいいかげんで、特に精度を有するマスク
ROMではその精度が問題となっていた◎つまり、少し
でも合成したデータがずれるとROM部のデータがずれ
℃誤動作の原因となっていた。
Conventionally, mask R was created using data in ROM and data outside ROM.
In the method of synthesizing OM data, the synthesized mask l (the OM quality check was not performed. Here, data outside ROM is fixed data when synthesizing mask ROM, and data inside ROM is fixed data when synthesizing mask ROM. This is variable data and user-specific data when composing ROMs.As shown in FIG. Pattern B inside the ROM is combined to form a combined pattern of the pattern A outside the ROM and the pattern B inside the ROM on the reticle 13. The only way to check if the synthesized pattern is out of place is to look at the pattern itself. [Problems with background technology] As described above, in the conventional mask ROM synthesis method, the synthesis accuracy is poor. In particular, the precision of the mask ROM was a problem. In other words, if the synthesized data shifted even slightly, the data in the ROM section would shift, causing malfunction.

〔発明の目的〕[Purpose of the invention]

この発明は上記の点に鑑みてなされたもので、その目的
はR,OM内データとROM外データによりマスクRO
Mデータを合成する方法において、ROM内データと1
(0M外データに合成ずれチェックマークを設けて、そ
の合成精度を上げるようにしたマスクROM合成ずれ検
出方法を提供することにある。
This invention was made in view of the above points, and its purpose is to perform mask RO by using data in R, OM and data outside ROM.
In the method of synthesizing M data, data in ROM and 1
(An object of the present invention is to provide a mask ROM synthesis deviation detection method that increases the synthesis accuracy by providing a synthesis deviation check mark on non-0M data.

〔発明の概要〕[Summary of the invention]

ROM内データとROM外データによりマスク)LOM
データを合成する方法において、 )10M内データ及
び80M外データのそれぞれに合成ずれチェックマーク
を設けてマスクROMの合成精度を上げROM部のデー
タずれをなくすようにしたマスクROM合成ずれ検出方
法である。
Masked by data in ROM and data outside ROM) LOM
In the method of synthesizing data, this is a mask ROM synthesis deviation detection method in which a synthesis deviation check mark is provided for each of the data within 10M and the data outside 80M to improve the synthesis accuracy of the mask ROM and eliminate data deviation in the ROM section. .

〔発明の実施例〕[Embodiments of the invention]

以下、図面を参照してこの発明の一実施例を説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

第2図に示すよ5に、ROM外データはレティクル14
上に形成された場合、第1の合成ずれチェックマークC
はレティクル14の下方に示した如く左斜め方向に配置
された2つの正方形のマークにより構成される◎また。
As shown in FIG.
If formed on the top, the first composite shift check mark C
is composed of two square marks placed diagonally to the left as shown below the reticle 14.

ROM内データがレティクル15上に形成された場合、
第2の合成ずれチェックマークDはレティクル16の下
方に示した如く右斜め方向に配置された2つの正方形の
マークにより構成さ ・れる。そして、ROM外データ
とROM内データとが合成されてレティクル16上に形
成された場合、上記第1の合成ずれチェックマークCと
上記第2の合成ずれチェックマークDが合成されて、合
成ずれチェックマー・りEとなる。上記合成ずれチェッ
クマークEはレティクル16の下方に示した如く、4つ
の正方形により構成される。そして、合成後の間隔x、
yの値を決めておけば、その値以内にx、yの値が入っ
ていれば、マスクROMの合成の合否が正確にできる。
When the data in the ROM is formed on the reticle 15,
The second synthesis deviation check mark D is composed of two square marks arranged diagonally to the right as shown below the reticle 16. Then, when the data outside the ROM and the data inside the ROM are combined and formed on the reticle 16, the first combination deviation check mark C and the second combination deviation check mark D are combined to check the combination deviation. It becomes Ma Ri E. As shown below the reticle 16, the synthesis deviation check mark E is composed of four squares. Then, the interval x after synthesis,
If the value of y is determined, if the values of x and y are within that value, it is possible to accurately determine whether or not the mask ROM is combined.

〔発明の効果〕〔Effect of the invention〕

以上詳述したようにこの発明によれば、合成ずれチェッ
クマークをROM外データと)LOM内データの上部及
び下部に配置して合成後のマスクI(、OMデータの合
成ずれをチェックするようにしたので、マスク1(lO
Mデータの合成精度を上げてROM部のデータずれをな
くすよ5にしたマスクit OM合成ずれ検出方法を提
供することができる。
As described in detail above, according to the present invention, synthesis deviation check marks are placed above and below the LOM data (outside ROM data) to check the synthesis deviation between the mask I (and OM data) after synthesis. Therefore, mask 1 (lO
It is possible to provide a mask it OM synthesis deviation detection method that improves the synthesis accuracy of M data and eliminates data deviation in the ROM section.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のマスクROM合成方法を示す図、[42
図はこの発明の一実施例な示すマスクROM合成ずれ検
出方法を示す図である。 11〜16・・・レティクル。 出願人代理人 弁理士  鈴 江 武 彦第1図 第2図
FIG. 1 is a diagram showing a conventional mask ROM synthesis method, [42
The figure is a diagram showing a method for detecting mask ROM synthesis deviation, which is an embodiment of the present invention. 11-16... Reticle. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims] BOM内データとROM外データによりマスクROMデ
ータを合成する方法において、 [3M外データに設け
た第1の合成ずれチェックマークとROM内データに設
けた第2の合成ずれチェックマークとによりマスクRO
Mデータのずれを検出するよ5Kしたことを特徴とする
マスクROM合成ずれ検出方法。
In a method of synthesizing mask ROM data using data in the BOM and data outside the ROM, [Mask ROM is detected by a first synthesis deviation check mark provided on the data outside the 3M and a second synthesis deviation check mark provided on the data in the ROM.
A mask ROM synthesis deviation detection method characterized in that a deviation of M data is detected by 5K.
JP57109520A 1982-06-25 1982-06-25 Method for detecting compositive deviation in mask rom Pending JPS59922A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57109520A JPS59922A (en) 1982-06-25 1982-06-25 Method for detecting compositive deviation in mask rom

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57109520A JPS59922A (en) 1982-06-25 1982-06-25 Method for detecting compositive deviation in mask rom

Publications (1)

Publication Number Publication Date
JPS59922A true JPS59922A (en) 1984-01-06

Family

ID=14512336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57109520A Pending JPS59922A (en) 1982-06-25 1982-06-25 Method for detecting compositive deviation in mask rom

Country Status (1)

Country Link
JP (1) JPS59922A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61502155A (en) * 1984-05-09 1986-09-25 ケセナ−,ヘルマン,ポウルス,マリア Method and apparatus for forming aesthetically spectacular liquid displays
JPH034958A (en) * 1989-05-23 1991-01-10 Wet Enterprises Inc Waterspout
JPH08103708A (en) * 1991-06-19 1996-04-23 Kawamura Funsui Kk Submerged fountain protective device
CN110842375A (en) * 2019-11-15 2020-02-28 Tcl华星光电技术有限公司 Code printing device, manufacturing method and display device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61502155A (en) * 1984-05-09 1986-09-25 ケセナ−,ヘルマン,ポウルス,マリア Method and apparatus for forming aesthetically spectacular liquid displays
JPH034958A (en) * 1989-05-23 1991-01-10 Wet Enterprises Inc Waterspout
JPH08103708A (en) * 1991-06-19 1996-04-23 Kawamura Funsui Kk Submerged fountain protective device
CN110842375A (en) * 2019-11-15 2020-02-28 Tcl华星光电技术有限公司 Code printing device, manufacturing method and display device

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